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http://dx.doi.org/10.3938/NPSM.68.1281

Influences of the Composition on Spectroscopic Characteristics of AlxGa1-xN Thin Films  

Kim, Dae Jung (School of Basic Sciences, Hanbat National University)
Kim, Bong Jin (School of Basic Sciences, Hanbat National University)
Kim, Duk Hyeon (School of Basic Sciences, Hanbat National University)
Lee, Jong Won (Department of Advaned Materials Engineering, Hanbat National University)
Publication Information
New Physics: Sae Mulli / v.68, no.12, 2018 , pp. 1281-1287 More about this Journal
Abstract
In this study, $Al_xGa_{1-x}N$ films were grown on (0001) sapphire substrates by using metal-organic chemical vapor deposition (MOCVD). The crystallinity of the grown films was examined with X-ray diffraction (XRD) patterns. The surfaces and the chemical properties of the $Al_xGa_{1-x}N$ films were investigated using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The optical properties of the $Al_xGa_{1-x}N$ film were studied in a wide photon energy range between 2.0 ~ 8.7 eV by using spectroscopic ellipsometry (SE) at room temperature. The data obtained by using SE were analyzed to find the critical points of the pseudodielectric function spectra, $<{\varepsilon}(E)>=<{\varepsilon}_1(E)>+i<{\varepsilon}_2(E)>$. In addition, the second derivative spectra, $d^2<{\varepsilon}(E)>/dE^2$, of the pseudodielectric function for the $Al_xGa_{1-x}N$ films were numerically calculated to determine the critical points (CPs), such as the $E_0$, $E_1$, and $E_2$ structure. For the four samples (x = 0.18, 0.21, 0.25, 0.29) between a composition of x = 0.18 and x = 0.29, changes in the critical points (blue-shifts) with increasing Al composition at 300 K for the $Al_xGa_{1-x}N$ film were observed via ellipsometric measurements for the first time.
Keywords
$Al_xGa_{1-x}N$ film; Spectroscopic ellipsometry; Metal-organic chemical vapor deposition; Pseudodielectric function; Atomic force microscopy; X-ray photoelectron spectroscopy;
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