• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.25-28
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• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.105-106
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• 2013

Surface plasmon resonance (SPR) is classified into the propagating surface plasmon (PSP) excited on flat metal surfaces and the local surface plasmon (LSP) excited by metalnanoparticles. It is known that fluorescence signals are enhanced by these two SPR-fields.On the other hand, fluorescence is quenched by the energy transfer to metal (FRET). Bothphenomena are controlled by the distance between dyes and metals, and the degree offluorescence enhancement is determined by the correlation. In this study, we determined thecondition to achieve the maximum fluorescence enhancement by adjusting the distance of ametal nanoparticle 2D sheet and a quantum dots 2D sheet by the use of $SiO_2$ spacer layers. The 2D sheets consisting of myristate-capped Ag nanoparticles (AgMy nanosheets) wereprepared at the air-water interface and transferred onto hydrophobized gold thin films basedon the Langmuir-Schaefer (LS) method [1]. The $SiO_2$ sputtered films with different thickness (0~100 nm) were deposited on the AgMy nanosheet as an insulator. TOPO-cappedCdSe/CdZnS/ZnS quantum dots (QDs, ${\lambda}Ex=638nm$) [2] were also transferred onto the $SiO_2$ films by the LS method. The layered structure is schematically shown in Fig. 1. The result of fluorescence measurement is shown in Fig. 2. Without the $SiO_2$ layer, the fluorescence intensity of the layered QD film was lower than that of the original QDs layer, i.e., the quenching by FRET was predominant. When the $SiO_2$ thickness was increased, the fluorescence intensity of the layered QD film was higher than that of the original QDs layer, i.e., the SPR enhancement was predominant. The fluorescence intensity was maximal at the $SiO_2$ thickness of 20 nm, particularly when the LSPR absorption wavelength (${\lambda}=480nm$) was utilized for the excitation. This plasmonic nanosheet can be integrated intogreen or bio-devices as the creation point ofenhanced LSPR field.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.266-271
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• 2003

The reflectance spectrum of optical films thicker than a few microns shows an intensity oscillation due to interference. Since the spectral period of the oscillation is inversely related to film thickness, the thickness of an optical film can be determined from the spectral frequency of the oscillation. For rapid data processing, the spectral frequency is obtained by use of a Fast Fourier Transformation technique. The conventional method of applying a Fast Fourier Transformation to the reflectance spectrum versus photon energy is modified so as to clear the ambiguity in choosing the proper effective refractive index value and to prevent the broadening of the Fourier transformed peak due to the refractive index dispersion. This technique of modified Fast Fourier Transformation is suggested by the authors for the first time to their knowledge. From the analysis of the calculated reflectance spectrum of a 30-${\mu}{\textrm}{m}$-thick dielectric film. it is shown to improve the accuracy in determining film thickness by a great amount. The improved accuracy of the modified Fast Fourier Transformation is also confirmed from the analysis of the reflectance spectra of a sample with 80-${\mu}{\textrm}{m}$-thick cover layer and 13-${\mu}{\textrm}{m}$-thick spacer layer on a PC substrate.

• Fashion & Textile Research Journal
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• v.25 no.2
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• pp.221-229
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• 2023

This study aims to develop knee protectors that provide high safety and fitness, while incorporating a motion-adaptable 3D-printed pad. These protectors were evaluated by individuals who experience knee discomfort or pain. The results are as follows. First, the 3Dprinted pad design of a hexagonal mesh structure, which is modeled for excellent appearance and knee movement. Each unit of the mesh has a outer layer of 2mm thick, a spacer layer of 1 mm in diameter, and is connected by a 1.5 mm bridge. The bridge was extended up to 1.2 cm. Second, the knee brace was designed in three types - cylinder, strap, and combination by Universal design. Impact protection measurements of the three knee protectors demonstrated roughly 80% reduction in impact. Third, based on usability evaluation, cylinder type protectors have the highest ratings in most areas, primarily because of their ease of use. The strap type protector received positive reviews in terms of appearance and care, and the combination type provided stable knee protection. This study demonstrated the potential industrial application of 3D printing technology by designing and evaluating protective products for the human body. The results of this study are expected to aid knee protector manufacturers in developing practical products and promoting the development of protective equipment for other body parts or purposes.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.137-141
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• 2004

In this paper, a thermopneumatic PMDS (polydimethlysiloxane) micropump with nozzle/diffuser elements is presented. The micropump is composed of nozzle/diffuser elements as dynamic valves, an actuator consisting of a circular PDMS diaphragm and a Cr/Au heater on a glass substrate. Four PDMS layers are used for fabrication of an actuator chamber, actuator diaphragm by a spin coating process, spacer layer, and nozzle/diffuser by the SU-8 molding process. The radius and thickness of the actuator diaphragm is 2 mm and 30 ${\mu}{\textrm}{m}$, respectively. The length and the conical angle of the nozzle/diffuser elements are 3.5 mm and 20$^{\circ}$, respectively. The actuator diaphragm is driven by the air cavity pressure variation caused by ohmic heating and natural cooling. The flow rate of the micropump in the frequency domain is measured for various duty cycles of the square wave input voltage. When the square wave input voltage of 5 V DC is applied to the heater, the maximum flow rate of the micropump is 44.6 ${mu}ell$/min at 100 Hz with a duty ratio of 80% under the zero pressure difference.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• ETRI Journal
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• v.32 no.3
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• pp.414-421
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• 2010

The interconnection mechanisms of a smart anisotropic conductive adhesive (ACA) during processing have been characterized. For an understanding of chemorheological mechanisms between the fluxing polymer and solder powder, a thermal analysis as well as solder wetting and coalescence experiments were conducted. The compatibility between the viscosity of the fluxing polymer and melting temperature of solder was characterized to optimize the processing cycle. A fluxing agent was also used to remove the oxide layer performed on the surface of the solder. Based on these chemorheological phenomena of the fluxing polymer and solder, an optimum polymer system and its processing cycle were designed for high performance and reliability in an electrical interconnection system. In the present research, a bonding mechanism of the smart ACA with a polymer spacer ball to control the gap between both substrates is newly proposed and investigated. The solder powder was used as a conductive material instead of polymer-based spherical conductive particles in a conventional anisotropic conductive film.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.62-66
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• 2000

Annealing cycle number and nonmagnetic layer thickness dependences of interlayer coupling field ( $H_{inf}$ ) and coercivity ( $H_{cf}$ ) of free magnetic layer on NiMn alloy-spin valve films (SVF) were investigated. The SVF is Glass (7059)/N $i_{81}$F $e_{l9}$(70 $\AA$)/Co(10 $\AA$)/Cu(t $\AA$)/Co(15 $\AA$)N $i_{81}$$Fe_{19}$(35 $\AA$)/N $i_{25}$M $n_{75}$(250 $\AA$)Ta(50 $\AA$) films, it were fabricated using the dc sputtering method at different pinning layer thickness and nonmagnetic spacer thickness (Cu thickness; 30 $\AA$, 35 $\AA$, 40 $\AA$) of NiMn alloy with 25 at.%. Ni In case that Cu thickness of SVF is 35 $\AA$ and peak exchange coupling field ( $H_{ex}$) was 620 Oe, while coercivity $H_{c}$ = 280 Oe and MR ratio showed 2.5%. As for $H_{inf}$ and $H_{cf}$ , every SVF increased up to the stabilized values with the increase of annealing cycle number 15, which were $H_{inf}$ of 120 Oe and $H_{cf}$ of 75 Oe. The increase of $H_{cf}$ with the annealing cycle number seems to be caused by the effective reduction of Cu layer thickness due to the increase of interfacial mixing of Cu layer and Co layer. In addition, the $H_{inf}$ and $H_{cf}$ dependences of free NiFe layer by the interfacial mixing effect were appeared the different aspects when Cu layer becomes more thinner and thicker than Cu layer thickness of 35 $\AA$, respectively.ively....

• Mycobiology
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• v.44 no.3
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• pp.155-161
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• 2016

The most economically important species used in a wide range of fermentation industries throughout Asia belong to Aspergillus section Flavi, which are morphologically and phylogenetically indistinguishable, with a few being toxigenic and therefore a major concern. They are frequently isolated from Korean fermentation starters, such as nuruk and meju. The growing popularity of traditional Korean alcoholic beverages has led to a demand for their quality enhancement, therefore requiring selection of efficient non-toxigenic strains to assist effective fermentation. This study was performed to classify the most efficient strains of Aspergillus section Flavi isolated from various types of traditional wheat nuruk, based on a polyphasic approach involving molecular and biochemical evaluation. A total of 69 strains were isolated based on colony morphology and identified as Aspergillus oryzae/flavus based on internal transcribed spacer and calmodulin gene sequencing. Interestingly, none were toxigenic based on PCR amplification of intergenic regions of the aflatoxin cluster genes norB-cypA and the absence of aflatoxin in the culture supernatants by thin-layer chromatography analysis. Saccharification capability of the isolates, assessed through ${\alpha}-amylase$ and glucoamylase activities, revealed that two isolates, TNA24 and TNA15, showed the highest levels of activity. Although the degrees of variation in ${\alpha}-amylase$ and glucoamylase activities among the isolates were higher, there were only slight differences in acid protease activity among the isolates with two, TNA28 and TNA36, showing the highest activities. Furthermore, statistical analyses showed that ${\alpha}-amylase$ activity was positively correlated with glucoamylase activity (p < 0.001), and therefore screening for either was sufficient to predict the saccharifying capacity of the Aspergillus strain.