• 제목/요약/키워드: source material

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Direct Printing법에 의해 제작된 OTFT용 source & drain 전극용 전도성 페이스트 제조 (The Manufacture of Conductive paste for OTFT source & drain contacts Fabricated by Direct printing method)

  • 이미영;남수용;김성현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.384-385
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    • 2006
  • We studied about conductive pastes of the source-drain contacts for OTFTs(organic thin-film transistors) fabricated by direct printing(screen printing) method. We used Ag and conductive carbon black powder as the conductive fillers of pastes. The conductive pastes were manufactured by various dispersing agents and dispersing conditions and source-drain contacts with $100{\mu}m$ of channel length were fabricated. We could obtain the OTFTs which exhibited different field-effect behaviors over a range of source-dram and gate voltages depending on a kind of conductive fillers used conductive pastes.

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Nano-technology에 도입된 Dual Poly Gate에서의 DPN 공정 연구 (Impact of DPN on Deep Nano-technology Device Employing Dual Poly Gate)

  • 김창집;노용한
    • 한국전기전자재료학회논문지
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    • 제21권4호
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    • pp.296-299
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    • 2008
  • The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

LPC 인젝터의 소음원 규명 및 소음저감 대책 (Noise Source Identification and Countermeasure for the Noise of LPG Injector)

  • 김원진;박종현;김성대;이병호
    • 한국정밀공학회지
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    • 제19권3호
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    • pp.144-151
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    • 2002
  • This work focuses on finding out the noise source and the method of reducing the noise level of LPG(liquefied petroleum gas) fuel injector. The noise of LPG injector in operating condition is due to the impact between valve and valve seat. This study shows that if the revolution of engine is increased, the noise of LPG injector will be more serious but it is not nearly affected by the increment of fuel pressure. The source and transmission paths of noise are identified through the analysis of noise generation mechanism and noise spectrum. The sound absorbing material is tested to verify its efficiency of sound absorption thor the LPG injector. The effect of noise reduction of absorbing material is remarkable when the engine speed is high. Consequently two methods of reducing the noise level are suggested from the identified results. The one is to equip the absorbing material on the outer side of injector and the other is to coat with a soft material or equip a soft ring on the surface of impact.

Potential Water Retention Capacity as a Factor in Silage Effluent Control: Experiments with High Moisture By-product Feedstuffs

  • Razak, Okine Abdul;Masaaki, Hanada;Yimamu, Aibibula;Meiji, Okamoto
    • Asian-Australasian Journal of Animal Sciences
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    • 제25권4호
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    • pp.471-478
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    • 2012
  • The role of moisture absorptive capacity of pre-silage material and its relationship with silage effluent in high moisture by-product feedstuffs (HMBF) is assessed. The term water retention capacity which is sometimes used in explaining the rate of effluent control in ensilage may be inadequate, since it accounts exclusively for the capacity of an absorbent incorporated into a pre-silage material prior to ensiling, without consideration to how much the pre-silage material can release. A new terminology, 'potential water retention capacity' (PWRC), which attempts to address this shortcoming, is proposed. Data were pooled from a series of experiments conducted separately over a period of five years using laboratory silos with four categories of agro by-products (n = 27) with differing moisture contents (highest 96.9%, lowest 78.1% in fresh matter, respectively), and their silages (n = 81). These were from a vegetable source (Daikon, Raphanus sativus), a root tuber source (potato pulp), a fruit source (apple pomace) and a cereal source (brewer's grain), respectively. The pre-silage materials were adjusted with dry in-silo absorbents consisting wheat straw, wheat or rice bran, beet pulp and bean stalks. The pooled mean for the moisture contents of all pre-silage materials was 78.3% (${\pm}10.3$). Silage effluent decreased (p<0.01), with increase in PWRC of pre-silage material. The theoretical moisture content and PWRC of pre-silage material necessary to stem effluent flow completely in HMBF silage was 69.1% and 82.9 g/100 g in fresh matter, respectively. The high correlation (r = 0.76) between PWRC of ensiled material and silage effluent indicated that the latter is an important factor in silage-effluent relationship.

고효율 파워 반도체 소자를 위한 Mg-doped AlN 에피층의 HVPE 성장 (HVPE growth of Mg-doped AlN epilayers for high-performance power-semiconductor devices)

  • 배숭근;전인준;양민;이삼녕;안형수;전헌수;김경화;김석환
    • 한국결정성장학회지
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    • 제27권6호
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    • pp.275-281
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    • 2017
  • AlN는 넓은 밴드 갭 및 높은 열전도율로 인해 넓은 밴드 갭 및 고주파 전자 소자로 유망한 재료이다. AlN은 전력 반도체의 재료로서 더 큰 항복전압과 고전압에서의 더 작은 특성저항의 장점을 가지고 있다. 높은 전도도를 갖는 p형 AlN 에피층의 성장은 AlN 기반 응용 제품 제조에 중요하다. 본 논문에서는 Mg이 도핑된 AlN 에피층을 혼합 소스 HVPE에 의해 성장하였다. Al 및 Mg 혼합 금속은 Mg-doped AlN 에피 층의 성장을 위한 소스 물질로 사용하였다. AlN 내의 Mg 농도는 혼합 소스에서 Mg 첨가 질량의 양을 조절함으로써 제어되었다. 다양한 Mg 농도를 갖는 AlN 에피 층의 표면 형태 및 결정 구조는 FE-SEM 및 HR-XRD에 의해 조사하였다. Mg-doped AlN 에피 층의 XPS 스펙트럼으로 부터 혼합 소스 HVPE에 의해 Mg을 AlN 에피 층에 도핑할 수 있음을 증명하였다.

식용작물재배 LED 등기구 모듈개발

  • 송용종;최현호;이문호;김영표;이호식;송민종;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.284-284
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    • 2009
  • The LED of cultivation edible plants was compliance the variable of the photo-receptor pigment with the red light source and ultra red light source from long wave region. The mechanism of cultivation edible plants for each part was necessary the wavelength unit which is appropriate, the illuminant source, motor control and lens design of LED light source about plant. The photo-receptor pigment induces for a long daytime recognition, seed germination and anthesis etc, induction years exists in the state which is an inactivity within the cells and in compliance with the red light source to be converted in active

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GaAs MESFET의 Source 접지상태에 따른 게이트 누설 전류 특성 (The GaAs Leakage Current Characteristics of GaAs MESFET's using Source Ground Status)

  • 원창섭;유영한;안형근;한득영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.263-266
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    • 2003
  • The gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. Next, the gate to drain current has been obtained with a ground source. The difference of two current has been tested and provide that the existence of another source to Schotuy barrier height against the image force lowering effect.

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전류측정감도 개선을 위한 로고우스키 코일의 설계 (Design of Rogowski coil to improve of current measurement sensitivity)

  • 박정남;이청;장용무;강성화;임기조;나동희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.609-612
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    • 2001
  • Rogowski coil is made having no ferromagnetic material in a core. So the coil cannot be driven into saturation. This result in that Rogowski coils may be calibrated at relatively low currents. and used with confidence at very high currents. However the lowest level of current that can be measured is limited by the sensitivity of the voltage measuring instrument and system noise. Therefore. geometrical effects were investigated in order to measure high sensitivity of low level current and the significant source of error was examined as well. In the results, the source of error was associated with coil designs. i.e. shape and uniformity of coil and a geometrical location of current source inside and outside of the Rogowski coil.

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전류측정감도 개선을 위한 로고우스키 코일의 설계 (Design of Rogowski coil to improve of current measurement sensitivity)

  • 박정남;이청;장용무;강성화;임기조;나동희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.609-612
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    • 2001
  • Rogowski coil is made having no ferromagnetic material in a core. So the coil cannot be driven into saturation. This result in that Rogowski coils may be calibrated at relatively low currents, and used with confidence at very high currents. However the lowest level of current that can be measured is limited by the sensitivity of the voltage measuring instrument and system noise. Therefore, geometrical effects were investigated in order to measure high sensitivity of low level current and the significant source of error wa examined as well. n the results, the source of error was associated with coil designs, i.e. shape and uniformity of coil and a geometrical location of current source inside and outside of the Rogowski coil.

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에너지전달을 이용한 가시광 Light Source의 발광특성에 관한 연구 (Study on the Emission Properties of Visible Light Source using Energy Transfer)

  • 구할본;김주승
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.486-489
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    • 2003
  • Red organic electroluminescent(EL) devices based on poly(N-vinylcarbazole)(PVK) and tris(8-hydroxyquinorine aluminum)($Alq_3$) doped with red emissive material, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran(DCJTB), poly(3-hexylthiophene)(P3HT), Rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3,6,7-tetrahydro-1H,5H-benzo-[i.j])quinolizin-8yl)vinyl-4H-pyran(DCM2) were fabricated. We examine the energy transfer from $Alq_3$ to DCJTB, P3HT, Rubrene and DCM2 by comparing between the PL and EL spectrum. The maximum peak PL intensities were achieved when the doping concentration of DCJTB, DCM2, P3HT and Rubrene has 5, 1, 0.5, 2wt%, respectively. The maximum luminance of device using DCJTB showed $594\;cd/m^2$ at 15V.

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