• Electrical & Electronic Materials
• /
• v.9 no.4
• /
• pp.379-384
• /
• 1996

The microwave dielectric properties of (I-x)CaTiO$_{3}$-xLaAIO$_{3}$ were investigated. The solid solution of (1-x)CaTiO$_{3}$-xLaAIO$_{3}$ had the perovskite structure in the range of all compositions. The crystal system of (1-x)CaTiO$_{3}$-xLaAIO$_{3}$ was transformed to orthorhombic(x.leq.0.4), psudo-cubic(x=0.5), and rhombohedral (x.geq.0.7) in turn, as the amount of LaAIO$_{3}$ increased. The dielectric constant and temperature coefficient of resonant frequency of solid solution were decreased with the content of LaAIO$_{3}$, whereas, the value of Q . f$_{o}$ was increased. The microwave dielectric material having Q . f$_{o}$ = 32, 500, .epsilon.$_{r}$ = 42, and .tau.$_{f}$ = 5 ppm/.deg. C was obtained from the 0.35CaTiO$_{3}$-0.65LaAIO$_{3}$ composition sintered at 1600.deg. C for 4hrs.hrs.hrs.

• Proceedings of the KIEE Conference
• /
• 1990.07a
• /
• pp.275-278
• /
• 1990

This study investigated electrical characteristics of solid and liquid epoxy rosins by measuring dielectric breakdown and dielectric loss when epoxy resins were exposed to a mixing cure, i.e., Fusion Blend Method. It was found that mixing epoxy resins were superior to dielectric breakdown and has shorter curing time compare with those of pure liquid epoxy resins.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1271-1273
• /
• 1994

In the field of the optics, precise machine, semiconducting processing, the micro-positioning actuators are required for the control of position in the submicron range. In this study, PNN-PZN-PZT ceramics were fabricated by solid state reaction. The structural, dielectric and electric properties were investigated for sintering condition. The specimen sintered for 1hr at 1,150($^{\circ}C$), had the highest density and dielectric contant.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.543-545
• /
• 2009

With injection-type source delivery system of atomic layer deposition (ALD), bottom-contact and bottom-gate thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric for the first time. The properties of the ZnO TFT were greatly influenced by the device structure and the process conditions. The zinc oxide TFTs exhibited a channel mobility of 0.43 $cm^2$/Vs, a threshold voltage of 0.85 V, a subthreshold slope of 3.30 V/dec, and an on-to-off current ratio of above $10^6$ with solid saturation.

• Journal of Magnetics
• /
• v.14 no.3
• /
• pp.120-123
• /
• 2009

In this study, BiFe$O_3$-BaTi$O_3$ ceramics have been fabricated by a solid-state reaction method. The effects of BaTi$O_3$ content in the (1-x)BiFe$O_3$-xBaTi$O_3$ (x = 0.1, 0.2, 0.25, 0.3, 0.4, 0.5) system on crystal structure and magnetic, dielectric, and ferroelectric properties were investigated. Perovskite BiFe$O_3$ was stabilized through the formation of a solid solution with BaTi$O_3$. Rhombohedrally distorted structure (1-x)BiFe$O_3$-xBaTi$O_3$ ceramics showed strong ferromagnetism at x = 0.5. Dielectric and ferroelectric properties of the BiFe$O_3$-BaTi$O_3$ system also changed significantly upon addition of BaTi$O_3$. It was found that the maximum dielectric and ferroelectric properties were exhibited in the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25. This suggested the morphotropic phase boundary (MPB) with the coexistence of both rhombohedral and cubic phases of the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.3
• /
• pp.503-507
• /
• 1998

Sintering behavior and dielectric peroperties of $xCaTiO_3-La(Zn_{1/2}Ti_{1/2})O_3$ system were investigated for better understanding of the microwave dielectric materials. In $xCaTiO_3-(1-x)La(Zn_{1/2}Ti_{1/2})O_3$ systems, solid solution type was focused as a function of composition(x=0.4-0.6) and sintered density. With increasing the sintered density, the relative dielectric constant was decreased and Q value was increased and then saturated. In solid solution type, dielectric constant was increased with increasing $CaTiO_3$ content. In $0.5\;CaTiO_3-0.5\; La(Zn_{1/2}Ti_{1/2})O_3$ case, dielectric constant(=48) and temperature coefficient of resonace frequency$(=-1 ppm/^{\circ}C$) were obtained.

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2001.05a
• /
• pp.6-6
• /
• 2001

• Proceedings of the Korean Vacuum Society Conference
• /
• 2001.02a
• /
• pp.31-31
• /
• 2001

• Transactions of the Society of Information Storage Systems
• /
• v.4 no.1
• /
• pp.13-18
• /
• 2008

Scratches are observed on a polymer cover-layer of near-field recording (NFR) media after a servo test with rotating disc. The scratches are formed by the collision of a solid immersion lens (SIL)-media. One of the possible ways to avoid the scratch problem is to coat a dielectric protective film on the polymer cover-layer which enhances the hardness of the surface. The surface with hard characteristics in the surface reduces the scratch problem in the cover-layer. Not only the mechanical properties but also the optical properties should be controlled. Specifically, the refractive index of the dielectric protective film should be matched with the polymer cover-layer not to lose light at the interface due to the difference of the refractive index. The refractive index of the dielectric film can be tailored by controlling process parameters during sputtering and matched with that of the polymer cover-layer.

• Applied Science and Convergence Technology
• /
• v.24 no.3
• /
• pp.47-52
• /
• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.