• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.424-427
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• 2015

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3+xCuO$ (x= 0.006~0.010) ceramics were prepared by the conventional solid-state reaction method. The effects of CuO addition on the microstructure and dielectric properties was investigated. All specimens indicated rhombohedral phase without any secondary phase. As CuO addition increased, the variation width of TCC was increased at more than $40^{\circ}C$. Also, the specimen with x=0.007 sintered at $1,250^{\circ}C$ showed the high dielectric constant of 9,632 in spite of low temperature sintering temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.404-407
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• 2016

In this study, to develop low temperature sintering capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of $B_2O_3$ addition on the dielectric properties and microstructure was investigated. The XRD patterns demonstrated that all the specimens showed Perovskite phase, and secondary phases are indicated in the measurement range of XRD. And also, temperature coefficient of capacitance(TCC) of all the specimen sintered at $1,180^{\circ}C$ showed +3~-56% except for x=0.006. For all the specimens, observed one peak was tetragonal cubic difuse phase transition temperature(Tc), which is located in the vicinity of room temperature.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.2067-2069
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• 1998

A prototype semiconductor switch for the command resonant charging system has been developed for a line type modulator, which charges parallel pulse forming network(PFN) up to voltage of 5 kV at repetition rates of 60 Hz. A phase controlled power supply provides charging of the 4.7 ${\mu}s$ filter capacitor bank to voltage up to 5 kV. A solid state module of series stack array of sixe matched SCRs(1.6 kV, 50 A) is used as a command charging switch to initiate the resonant charging cycle. Both resistive and RC snubber network are used across each stage of the switch assembly in order to ensure proper voltage division during both steady state and transient condition. A master trigger signal is generated to trigger circuits which are transmitted through pulse transformer to each of the 6 series switch stages. A pulse transformer is required for high voltage trigger or power isolation. This paper will discuss trigger method, protection scheme, circuit simulation, and test result.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1719-1723
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• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.797-802
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• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.241-244
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• 2014

Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.178-182
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• 2006

A single electro-discharge-sintering (EDS) pulse (1.0 kJ/0.7 g), from a $300{\mu}F$ capacitor, was applied to atomized spherical Ti-6Al-4V powder in a low vacuum to produce porous-surfaced implant compacts. A solid core surrounded by a porous layer was formed by a discharge in the middle of the compact. XPS (X-ray photoelectron spectroscopy) was used to study the surface characteristics of the implant material. C, O, and Ti were the main constituents, with smaller amounts of Al, V, and N. The implant surface was lightly oxidized and was primarily in the form of $TiO_2$ with a small amount of metallic Ti. A lightly etched EDS implant sample showed the surface form of metallic Ti, indicating that EDS breaks down the oxide film of the as-received Ti-6Al-4V powder during the discharge process. The EDS Ti-6Al-4V implant surface also contained small amounts of aluminum oxide in addition to $TiO_2$. However, V detected in the EDS Ti-6Al-4V implant surface, did not contribute to the formation of the oxide film..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.206-210
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• 2010

$BaTiO_3$ dielectric ceramics are widely used to multi-layer ceramic capacitor. The $BaTiO_3$ powder was synthesized at $950^{\circ}C$ by using a solid state reaction and grinded by using a high-energy mill. And then, 2.53 wt% glass frit was added to the synthesized $BaTiO_3$ powders for lowering the sintering temperature. The mixed powders were sintered at various temperatures of $1170^{\circ}C$, $1200^{\circ}C$, $1230^{\circ}C$. Microstructures of the sintered $BaTiO_3$ ceramics were inspected by SEM and crystal structures were analyzed by XRD method. The relative dielectric constant was measured by using a impedance/gain phase analyzer. The synthesized $BaTiO_3$ powder had the tetragonal perovskite structure without secondary phase and the particle size was below 200 nm. The relative densities measured at the samples sintered at the temperature above $1200^{\circ}C$ were about 95%. The relative dielectric constant showed maximum value of 2310, which was measured in the specimen sintered at $1200^{\circ}C$. From these results, we could know that the added glass frit had effects on both lowering the sintering temperature and improving the dielectric property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.217-217
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• 2008

$BaTiO_3$는 perovskite 구조를 가지는 대표적인 강유전체 재료로서 MLCC (Multi Layer Ceramic Capacitor), PTC thermistor 등에 널리 사용되어지고 있으며, 그 특성을 향상시키기 위하여 많은 연구가 진행되고 있다. 현제 $BaTiO_3$ 분말 제조의 대표적인 합성법으로는 하소와 분쇄공정이 없는 수열합성법이 대표적이나, 나노 사이즈로 제작시 $BaTiO_3$는 마이크로 크기와 달리 입방정상으로 우세한 상태로 존재한다. 이는 제조과정 중의 hydroxyl defect의 영향과 나노 분말의 표면에너지 증가 때문이라고 보고된다. 따라서 본 연구는 이러한 문제점을 해결하기 위해 일반적인 세라믹 제조 방법인 고상반응법을 이용한 나노 사이즈의 $BaTiO_3$ 제조를 위한 최적의 공정 조건을 확립하기 위하여 본 연구를 진행하였다. 조성은 $BaTiO_3$와 반응온도를 낮추기 위한 anatase의 $TiO_2$를 사용하였고, $BaCO_3/TiO_2$ 의 조성비 (1. 1.01, 1.02, 1.03)를 제어하여 혼합한 후, 24h ball-mill 하여 하소 온도 ($860^{\circ}C{\sim}1000^{\circ}C$) 변화에 따른 입자 사이즈와 입도 분포를 측정하였다. 제조된 $BaTiO_3$분말의 결정 구조 분석을 위하여 XRD (X-ray diffraction) 분석을 수행 하였는데, 분석 결과로부터 제조된 분말들이 정방정 (tetragonal)의 perovskite구조를 갖고 있음을 확인하였다. 또한 분말의 미세구조 확인을 위하여 SEM (scanning electron microscope) 관찰을 수행하였는데, 나노 사이즈의 구형 분말을 얻을 수 있음을 확인할 수 있었다.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.250-256
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• 2017

A graphene electrode with a novel in-plane structure is proposed and successfully adopted for use in supercapacitor applications. The in-plane structure allows electrolyte ions to interact with all the graphene layers in the electrode, thereby maximizing the utilization of the electrochemical surface area. This novel structure contrasts with the conventional out-of-plane stacked structure of such supercapacitors. We herein compare the volumetric capacitances of in-plane- and out-of-plane-structured devices with reduced multi-layer graphene oxide films as electrodes. The in-plane-structured device exhibits a capacitance 2.5 times higher (i.e., $327F\;cm^{-3}$) than that of the out-of-plane-structured device, in addition to an energy density of $11.4mWh\;cm^{-3}$, which is higher than that of lithium-ion thin-film batteries and is the highest among in-plane-structured ultra-small graphene-based supercapacitors reported to date. Therefore, this study demonstrates the potential of in-plane-structured supercapacitors with high volumetric performances as ultra-small energy storage devices.