• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.127-128
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• 2006

일반적으로 screen printing 전극은 양산용 태양전지에 많이 응용되고 있다. 이것은 공정이 진공상태 내에서 이루어지지 않으므로 비교적 간단하게 증착 가능하고, co-firing으로 인한 공정단계의 함축과, 기판의 화학적인 오염이 적으며, 시료를 용도에 따라 다양하게 선택적으로 사용할 수 있고, 많은 수량의 태양전지에 전극을 저비용으로 빠르게 형성할 수 있기에 throughput 이 높은 장점이 있다. 하지만 lithography에 의한 전극보다 저항이 높고, uniformity가 낮은 단점이 있다. 본 연구에서는 Ag 전면전극과 Al 후면전극을 형성하고 conventional furnace에서 co-firing하여 열처리조건에 따라서 전극이 최적화된 가장 낮은 저항을 갖도록 하여 단점을 개선하여 보았다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• 한국태양에너지학회:학술대회논문집
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• 2008.11a
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• pp.220-225
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• 2008

Cylindrical stainless-steel/sodium heat pipe for a high-temperature solar thermal application was manufactured and tested for transient and steady-state operations. Two layers of stainless-steel screen mesh wick was inserted as a capillary structure. The outer diameter of the heat pipe was 12.7 mm and the total length was 250 mm. The effective heat transport length, the thermal load, and the operating temperature were varied as thermal transport conditions of the heat pipe. The thermal load was supplied by an electric furnace up to 1kW and the cooling was performed by forced convection of air The effective thermal conductivity and the thermal resistance were investigated as a function of heat flux, heat transport length, and vapor temperature. Typical range of the total effective thermal conductivity was as low as 43,500 W/m K for heat flux of 176.4 kW/$m^2$ and of operating temperature of 1000 K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.119-130
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• 1994

To deposit silicon on borosilicate glass substrates, 18 different substrate combinations were investigated because of the difficulty of direct deposition of silicon. Sucessful results were obtained from Al-and Mg-treated glass and furnace annealed sputtered silicon deposited glass substrates. A continuous silicon thin film on a large area substrates was obtained in the temperatures ranges from $420^{\circ}C to 520^{\circ}C$. These thin films might be applied to lower the cost of solar cells and solar cell modules.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.391-396
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• 2010

The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor to research the characteristic of interface at pn junction. The sheet resistance was decreased in accordance with the increasing the diffusion process time for n-type doping on p-type Si wafer. The electron affinity at the interface in the pn junction was decreased with increasing the amount of n-type doping and the sheet resistance also decreased. Consequently, the drift current due to the generation of EHP increased because of low potential barrier. The efficiency and fill factor were increased at the solar cell with increasing the diffusion process time.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.100.2-100.2
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• 2012

Surface texturing of crystalline silicon is carried out in alkaline solutions for anisotropic etching that leads to random pyramids of about $10{\mu}m$ in size. Recently textured pyramids size gradually reduced using new solution. In this paper, we investigated that texture pyramids size had an impact on emitter property and front electrode (Ag) contact. To make small (${\sim}3{\mu}m$) and large (${\sim}10{\mu}m$) pyramids size, texturing times control and one side texturing using a silicon nitride film were carried out. Then formation and quality of POCl3-diffused n+ emitter in furnace compare with small and large pyramids by using SEM images, simulation (SILVACO, Athena module) and emitter saturation current density (J0e). After metallization, Ag contact resistance was measured by transfer length method (TLM) pattern. And surface distributions of Ag crystallites were observed by SEM images. Also, performance of cell which is fabricated by screen-printed solar cells is compared by light I-V.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.97-100
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• 2015

The kesterite $Cu_2ZnSnSe_4$ (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature ($480^{\circ}C{\sim}560^{\circ}C$) without using a toxic $H_2Se$ gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.766-772
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• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

• Solar Energy
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• v.12 no.3
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• pp.47-59
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• 1992

In the concentric tube type recuperator, which is the most typical type of radiation recuperator, installed on the exhaust-secion of industrial furnace, air flows between the adiabatic outer tube and the inner tube in which exhausted gas flows with high temperature. The waste heat of the exhausted gas is transferred to the inner tube, and transferred from the inner tube to the flowing air. The heat transfer by radiation In the concentric tube type recuperator is modeled using spherical harmonics approximation, namely, P-N method and numerically analyzed considering the effect of dynamic flow field. The results are compared with the existing empirical data. In addition, a theoretical method is presented for the analysis of the heat transfer characteristics of a recuperator with a reradiator installed in the inner tube, which causes re-radiant in the inner tube, and the characteristics of the recuperator is analyszed and defined.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.115-119
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• 2014

$Cu(In,Ga)Se_2$ (CIGS) thin films have been used as a light absorbing layer in high-efficiency solar cells. In order to improve the quality of the CIGS thin film, often selenization step is applied. Especially when the thin film was formed by non-vacuum powder process, selenization can help to induce grain growth of powder and densification of the thin film. However, selenization is not trivial. It requires either the use of toxic gas, $H_2Se$, or expensive equipment which raises the overall manufacturing cost. Herein, we would like to deliver a new, simple method for selenization. In this method, instead of using a costly two-zone furnace, use of a regular tube furnace is required and selenium is supplied by a mixture of selenium and ceramic powder such as alumina. By adjusting the ratio of selenium vs. alumina powder, selenium vaporization can be carefully controlled. Under the optimized condition, steady supply of selenium vapor was possible which was evidently shown by large grain growth of CIGS within a thin powder layer.