• 제목/요약/키워드: sol gel

검색결과 2,527건 처리시간 0.026초

Sol-gel 및 CVD법을 이용한 고온 수소 분리용 silica/alumina 복합막의 합성 (Synthesis of Silica/Alumina Composite Membrane Using Sol-Gel and CVD Method for Hydrogen Purification at High Temperature)

  • 서봉국;이동욱;이규호
    • 멤브레인
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    • 제11권3호
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    • pp.124-132
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    • 2001
  • 고온에서 수소 분리 회수를 목적으로 silica/alumina 복합 막을 합성하였다. 막의 선택 투과 성능을 향상시키기 위해, sol-gel법에 의한 silica 및 alumina층을 중간층으로 도입하고, 그 위에 강제유동 CVD법에 의한 silica를 합성하였다. Sol-gel법에 의해 ${\alpha}$-alumina tube에 합성한 ${\gamma}$-alumina 및 silica 막은 Knudsen 확산 영역의 많은 mesopore를 포함하고 있어서 수소 선택 분리 막으로는 적합하지 못했다. 하지만, sol-gel법에 의해 합성한 silica/${\gamma}$-alumina층에 강제유동 CVD법으로 silica를 합성한 결과, 질소 투과 영역의 세공이 완전히 제거되어, 높은 수소 선택성을 가지는 복합 막이 형성되었다. 그 막은 온도에 따라 수소 투과 속도가 증가하여 $450^{\circ}C$에서 $5.57{\times}10^{-8}molm^2s^LPa^1$의 수소 투과 속도와, 9.52 kJ/mol의 활성화 에너지를 나타냈다. 분자체 효과에 의해 질소 투과가 완전히 배제되고, 수소만 선택적으로 투과되는 silica/alumina 복합막이 성공적으로 합성된다.

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Sol-Gel 방법으로 제작된 SnO2 seed layer를 적용한 고반응성 ZnO 가스 센서 (High-sensitivity ZnO gas Sensor with a Sol-gel-processed SnO2 Seed Layer)

  • 김상우;박소영;한태희;이세형;한예지;이문석
    • 센서학회지
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    • 제29권6호
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    • pp.420-426
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    • 2020
  • A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO2 nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO2 seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO2 seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

Tetraethoxysilane의 졸-겔 반응을 이용한 전기화학적 glucose biosenor 개발 (Development of Glucose Biosensor Using Sol-Gel Reaction of Tetraethoxysilane)

  • 장승철;박덕수
    • 센서학회지
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    • 제21권4호
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    • pp.311-317
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    • 2012
  • Disposable amperometric screen-printed biosensor strips have been fabricated by a sol-gel encapsulation for the analysis of glucose. The glucose oxidase(GOx) is entrapped in the gel matrix through sol-gel transition of tetraethoxysliane(TEOS). The biosensor is fabricated by GOx containing thin film of TEOS gel on the surface of screen-printed carbon electrode(SPCE). The GOx-containing thin film of TEOS gel offers a one-step modification process on the surface of SPCE. The optimum conditions for glucose determination have been characterized with respect to the applied potential, enzyme loading ratio, and pH. The linear range and detection limit of glucose detection were from 2.0 mM to 16.0 mM and 0.25 mM, respectively.

Sol-Gel법에 의한 강유전체 Pb(Zr, Ti)$O_3$의 제조 및 특성에 관한 연구 (Investigation on the property and preparation of ferroelectric Pb(Zr,Ti)$O_3$ by Sol-Gel method)

  • 임정한;김영식;장복기
    • E2M - 전기 전자와 첨단 소재
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    • 제7권6호
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    • pp.496-503
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    • 1994
  • In recent years Sol-Gel processing provides an interesting alternative method for the fabrication of ferroelectric thin layers and powder. PZT powder was prepared from an alkoxide-based solution by a Sol-Gel method. Gelation of synthesized complex solutions, microstructure, thermal analysis and crystallization behaviors of the calcined powder were studied in accordance with a water content and a catalyst. Especially gelation and crystallization behavior were analysed with the change of pH. The gelation time decreased as the pH of the mixed solution increased. For PZT powder with 650.deg. C heat treatment, 100% perovskite phase was formed by using either acidic or basic catalyst. By using either acidic or basic catalyst, we were able to get very fine powders of uniform shape with an average particle size of 0.8-1.mu.m.

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Titanium Dioxide Sol-gel Schottky Diodes and Effect of Titanium Dioxide Nanoparticle

  • Maniruzzaman, Mohammad;Zhai, Lindong;Mun, Seongcheol;Kim, Jaehwan
    • Journal of Electrical Engineering and Technology
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    • 제10권6호
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    • pp.2343-2347
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    • 2015
  • This paper reports the effect of Titanium dioxide (TiO2) nanoparticles on a TiO2 sol-gel Schottky diode. TiO2 nanoparticles were blended with TiO2 sol-gel to fabricate the Schottky diode. TiO2 nanoparticles showed strong anatase and rutile X-ray diffraction peaks. However, the mixture of TiO2 sol-gel and TiO2 nanoparticles exhibited no anatase and rutile peaks. The forward current of the Schottky diode drastically increased as the concentration of TiO2 nanoparticles increased up to 10 wt. % and decreased after that. The possible conduction mechanism is more likely space charge limited conduction.

Sol-gel법에 의한 $Zn_2SiO_4$:Mn, Al 형광체의 합성과 발광특성 (Sol-gel synthesis and luminescence of $Zn_2SiO_4$:Mn, Al phosphor)

  • 김창준;권명석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.271-278
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    • 2006
  • Green light emitting $Zn_2SiO_4$Mn and Al co-doped $Zn_2SiO_4$:Mn phosphor were synthesized by a sol-gel method combined with a furnace firing. The luminescent properties of the sample have been investigated. We have found that the phosphor powder with uniform shape show the maximum luminescent intensity when it is prepared with sol-gel method and fired at relatively high temperature ($1100{\sim}1300^{\circ}C$).

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Al-doped ZnO via Sol-Gel Spin-coating as a Transparent Conducting Thin Film

  • Nam, Gil-Mo;Kwon, Myoung-Seok
    • Journal of Information Display
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    • 제10권1호
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    • pp.24-27
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    • 2009
  • A simple nonalkoxide sol-gel route for depositing an Al-doped ZnO thin film on a glass substrate was derived in this study. The initial Al dopant concentration in the sol-gel preparation varied and ranged from 0 to 5%. The sol-gel-derived thin films showed c-plane preferred crystallization of their hexagonal phase, with nanosized grain structures. First and second post-heat-treatments were carried out to improve the film’s electrical resistivity. The carrier density and the Hall mobility were measured and discussed to explain the electrical resistivity. The optical transmittance within the visible range showed compatible properties, which indicates the possible use of A1-doped ZnO as a transparent electrode in flat panel displays.

Sol-Gel법으로 HA코팅된 치과용 임플란트 합금의 표면특성 (Surface Characteristics of HA Coated Dental Implant Alloy by Sol-Gel Method)

  • 최한철;고영무
    • 한국표면공학회지
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    • 제38권4호
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    • pp.167-173
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    • 2005
  • Surface characteristics of HA(hydroxyapatite) coated dental implant alloy by Sol-Gel method were investigated using potentiostat, ICP, SEM, EDX, EPMA and surface roughness tester. Surface roughness of HA coated specimen by Sol-Gel showed higher than that of PVD coated specimen. Corrosion resistance increased in the order of $1\%$ lactic acid, artificial saliva, $0.5\%$ HCI and $0.9\%$ NaCl solution. Amount of Ca element release was higher than that of V and P in the $0.5\%$ HCI and $0.9\%$ NaCl solution.