• Title/Summary/Keyword: sol gel

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Correction between Dielectric and Strain in PST Thin Films prepared by Sol-gel method for Tunable application (Tunable 소자 응용을 위한 Sol-gel 법으로 제작된 $(Pb_{0.5},Sr_{0.5})TiO_3$ 박막의 stain 과 유전 관계)

  • Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.582-585
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    • 2004
  • Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.

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Fabrication of Undoped PbTiO3 Ceramics via Sol-Gel Processing (Sol-Gel Processing에 의한 순수 $PbTiO_3$ Ceramics 제조)

  • 김선욱;윤만순;임종인;김성숭;김남흥
    • Journal of the Korean Ceramic Society
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    • v.29 no.3
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    • pp.211-215
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    • 1992
  • Crack free PbTiO3 ceramics were produced by sol-gel processing using alkoxide, which has not been reported to be successful. The PbTiO3 gels were prepared from Ti alkoxide and lead acetate without any dopants. They were calcined at $600^{\circ}C$ and miled to produce fine PbTiO3 powder. It was pressed into discs and they were sintered at 110$0^{\circ}C$ for a few hours. The sintered ceramics were relativley hard and dense as having about 96% of theoretical density of PbTiO3. Fabrication of pure PbTiO3 ceramics by sol-gel processing is possibly due to their small grain size and uniform distribution of residual stress created during cubic-tetragonal transition over large number of small grains in fine grain PbTiO3 ceramics.

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Preparation of $\gamma-LiAlO_2$ Short Fibers by the Sol-Gel Method (졸-겔법에 의한 $\gamma-LiAlO_2$ 단섬유의 제조)

  • 현상훈;이재현;홍성안
    • Journal of the Korean Ceramic Society
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    • v.33 no.10
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    • pp.1079-1088
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    • 1996
  • Discontinuous ${\gamma}$-LiAlO2 fibers for fiber-reinforcing MCFC matrixes have been produced by the sol-gel process using the centrifugal spinning apparatus of the Rotary type. Gel fibers could be obtained through spinning of stable LiAlO2 complex polymetric sols under the optimum spinning conditions (hollow-disc rotating velocity 9000 rpm sol feeding rate of 4ml/min flowing N2 temperature of 4$0^{\circ}C$ and flowing N2 pressure of 4 bar). It was found that defect free and densified ${\gamma}$-LiAlO2 fibers with the relative density of 98% and the mean diameter of 4.7${\mu}{\textrm}{m}$ were prepared when the spinned fibers were heat-treated to 100$0^{\circ}C$ on the specified heating schedule. in particular the mean diameter and length of fibers could be controlled by the pressure of flowing N2 and the chopping-sieving method respectively.

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Schottky diode characteristics of a sol-gel driven ZnO (졸-겔 방법으로 제조한 ZnO 쇼트키 다이오드의 특성 연구)

  • Han, Kwang-Joon;Kang, Kwang-Sun;Kim, Jae-Hwan
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1733-1736
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    • 2008
  • ZnO thin films with preferred orientation along the (0 0 2) plane were fabricated by a sol-gel method. The effects of the annealing temperature, time, and thickness were studied by investigating UV-visible spectra, FT-IR spectra, and XRD of ZnO films. The films were dried and annealed ed at $100^{\circ}C,\;200^{\circ}C$, and $300^{\circ}C$ for 1hr, 2hrs, and 3hrs, respectively. The film showed the preferred (0 0 2) orientation and high transmittance near 90% in the visible range. Also, SEM images of the films exhibited very smooth surfaces without holes and cracks. Schottky diodes were fabricated by using ZnO sol-gel material. Au and Al were used as electrodes to make Ohmic and Schottky contacts, respectively. The annealing temperature, time and the thickness dependent I-V characteristics were presented in this article.

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Sol-Gel Template Synthesis and Phase Transitions of $PbZrO_3$ Nanotubes ($PbZrO_3$ 나노튜브의 졸-겔 형판 합성과 상전이)

  • Chang, Ki-Seog;Bu, Sang-Don
    • Journal of the Korea Institute of Military Science and Technology
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    • v.8 no.4 s.23
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    • pp.85-90
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    • 2005
  • We report the phase transition temperatures of the $PbZrO_3$ perovskite nanotubes made by sol-gel template synthesis. The lead zirconate($PbZrO{_3}$) nanotubes were prepared with a chelate sol-gel of zirconium tetrabutoxide($Zr(OBu){_4}$) and leadacetate($Pb(OAc){_2}-3H_2O$). $Whatman^(r)$ anodisc membranes, with a 200nm pore size, served as the template. After removing the template in the 6M-NaOH solution, the $PbZrO{_3}$ nanotubes so far have shown an anomalous transition temperature, $123.6^{\circ}C$ as measured by DSC with a small particle size, 15.4nm determined by X-ray analysis with the aid of Scherrer's equation.

Electrochemical Characteristics of Indium Tin Oxide Nanoparticles prepared by Sol-gel Combustion Hybrid Method

  • Chaoumead, Accarat;Choi, Woo-Jin;Lee, Dong-Hoon;Sung, Youl-Moon
    • Journal of Electrical Engineering and Technology
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    • v.6 no.3
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    • pp.414-417
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    • 2011
  • Indium tin oxide (In:$SnO_2$) nanoparticles were synthesized employing a sol-gel combustion method followed by annealing. The TG, XRD, XPS and SEM results of the precursor powders and calcinated In:$SnO_2$ nanoparticles were investigated. Crystal structures were examined by powder XRD, and those results show shaper intensity peak at $25.6^{\circ}$ ($2{\theta}$) of $SnO_2$ by increased annealing temperature. A particle morphology and size was examined by SEM, and the size of the nanoparticles was found to be in the range of 20~30nm. In:$SnO_2$ films could controlled by nanoparticle material at various annealing temperature. The sol-gel combustion method was offered simple and effective route for the synthesis of In:$SnO_2$ nanoparticles.

Sol-Gel법을 적용한 투명전도 산화막 제조 공정

  • Park, Yeong-Ung;Lee, In-Hak;Jeong, Seong-Hak;Im, Sil-Muk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.108.2-108.2
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    • 2012
  • 디스플레이는 유리 기판이나 폴리머 기판에 진공장비를 통한 투명전극(TCO)를 증착시키고, 그 위에 발광체와 유전체를 쌓는 방식으로 공정을 진행한다. 특히 투명전극(TCO)의 경우 진공장비를 이용하여 증착을 진행하는데, 이러한 생산 공정은 고가의 생산 장비 및 재료와 공정의 복잡화에 따른 생산단가 상승등으로 인한 경쟁력 저하 문제가 야기되고 있다. 본 연구에서는 투명전극(TCO)의 주재료인 인듐 주석 산화물(ITO)를 배제하고, 아연 산화물(ZnO)에 알루미늄을 도핑한 투명전극을 습식방식으로 형성하는 기술에 관한 것이다. Sol-gel법을 이용한 용액 제조와 ZnO에 Al을 도핑하여, 후 열처리하여 유리 기판에 $1{\mu}m$두께를 갖는 투명전극 기판을 제작하였다. 각 공정에 있어서 조성변화가 투명전극 층에 미치는 영향에 대해서 조사 하였다. 이와 같은 제조 공정에는 Sol-gel 용액 제조, 박막형성에 이은 후처리로 이루어지는 단순공정이 적용되어, 기존 투명전도 산화막 공정에 대비하여 단순 공정으로 이뤄지며, 진공 설비를 배제함으로써 기존공정 대비 경쟁력을 갖게 된다.

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The Seeding Effects on the Phase Transformation of Sol-Gel Derived PZT Powder

  • Lee, Hyun-Tae;Lee, Wan-In;Kim, Yoo-Hang;Whang, Chin-Myung
    • Bulletin of the Korean Chemical Society
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    • v.23 no.8
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    • pp.1078-1084
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    • 2002
  • The formation temperature for the perovskite lead zirconate titanate [Pb(Zr,Ti)O3, PZT] derived from sol-gel route was lowered by more than $100^{\circ}C$ with the addition of crystallographically suitable seed particles, such as barium titanat e (BT) or PZT. We investigated the effect of seeding on the crystallization of perovskite phase and in the microstructure of the sol-gel derived PZT powder by varying the concentration, size and chemical species of seed particles. The phase transition as a function of temperature was monitored by DTA, XRD, and Raman spectroscopy, and the interface between the seed particle and grown PZT layer was analyzed by SEM and high resolution TEM techniques. It was found that both the heterogeneous and homogeneous nucleation contributes competitively in the formation of perovskite PZT grains.

Low Temperature Annealed Sol-Gel Aluminum Indium Oxide Thin Film Transistors

  • Hwang, Young-Hwan;Jeon, Jun-Hyuck;Seo, Seok-Jun;Bae, Byeong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.396-399
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    • 2009
  • Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as $350^{\circ}C$. They exhibit n-type semiconductor behavior, a mobility higher than 19 $cm^2/V{\cdot}s$ and an onto-off current ratio greater than $10^8$.

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A Study on the Structural Characteristics of PLZT Thin Films with Zr/Ti Ratios Prepared by Sol-Gel Method (Sol-Gel 법으로 제작된 PLZT 박막의 Zr/Ti 비에 따른 구조 특성에 관한 연구)

  • ;;J. Dougherty
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.7
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    • pp.535-540
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    • 1998
  • Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

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