• Journal of Magnetics
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• v.11 no.4
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• pp.167-169
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• 2006

Nanocrystalline CoFeHfO thin films have been fabricated by RF sputtering method. It is shown that the CoFeHfO thin films possess not only high electrical resistivity but also large saturation magnetization and anisotropy field. Among the composition investigated, $Co_{53}FE_{22}Hf_{10}O_{15}$ thin film is observed to exhibit good soft magnetic properties: coercivity ($H_{c}$) of 0.18 Oe; anisotropy fild ($H_{k}$) of 49.92 Oe; saturation magnetization ($4{\Pi}M_{s}$) of 15.5 kG. The frequency response of permeability of the film is excellent. The excellent magnetic properties of this film in addition of an extremely high electrical resistivity (r) of $185\;{\mu}cm$ make it ideal for uses in high-frequency applications of micromagnetic devices. It is the formation of a peculiar microstructure that resulted in the superior properties of this film.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.519-523
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• 1995

The Fe-TM-C-N nanocrystalline films (TM : Hf, Zr and Nb) are investigated to examine the relation between microstructure and soft magnetic properties. In these films, as the atomic radius of TM element increases, $P_{N2}$ which was added to get good soft magnetic properties was decreased and the maximum value of the permeability shifted to the high Fe range in the composition diagram. The best soft magnetic properties achieved in these films are : Hc of 0.15 Oe, $\mu_{eff}$ of 7800 (1MHz) and $4{\pi}M_{s}$ of 17.5 kG in Fe-Hf-C-N film ; Hc of 0.06 Oe, $\mu_{eff}$ of 2750 (1MHz) and $4{\pi}M_{s}$ of 16.8 kG in Fe-Zr-C-N film and Hc of 0.31 Oe; $\mu_{eff}$ of 2100 (1MHz) and $4{\pi}M_{s}$ of 15.5 kG in Fe-Nb-C-N film. It was considered that the stronger the bonding force between TM and C(N), the finer TM(C,N) phase is precipitated and therefore, the finer $\alpha$-Fe grains are formed. The effective permeability of the Fe-Zr-C-N films and Fe-Nb-C-N films remains nearly constant up to 10 MHz.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.216-217
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.176-176
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• 2016

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.883-887
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• 2006

In order to attain high-rate deposition of Mn-Zn ferrite thin film for soft magnetic underlayer in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and $O_{2}$ was performed. It was succeeded that Mn-Zn ferrite films with (111) crystal orientation were deposited on Pt(111) underlayer without any annealing process. The film revealed 3.4 kG of 4 ${\pi}Ms$, 70 Oe of coercivity. The deposition rate of the new method was 16 times as high as that of the conventional method using ferrite target.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.101-104
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• 2003

The maximum coercive force of SmCo thin film was obtained at the Sm=28.2% and dc bias field was generated to CoZrNb, soft magnetic thin film, deposited on the SmCo thin film. DC field point having the maximum permeability for CoZrNb was shifted to higher dc field. DC field strength increased as the length of easy direction of magnetization decreased and 60Oe was measured for $3mm{\times}0.5mm$ sample.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.198-203
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• 2003

To investigate whether the use of hard magnetic film is available to generate bias magnetic field for a magnetoimpedance sensor, the magnetic properties of SmCo hard magnetic films were investigated as a function of their compositions. The saturation magnetization decreased with Sm content increasing in SmCo films. And, the coercive force increased in the extent of Sm content of 28 at%, but decreased as Sm content increased moreover. The bias field effect of SmCo film to amorphous CoZrNb film was investigated with the magnetization corves, permeabilities, and magnetic domain structures of SmCo/CoZrNb multilayers. The bias field of about 60 Oe was observed in the film with 3 mm ${\times}$ 0.5 mm, which can be constructed as a MI sensor, and this result strongly indicates that the bias field generated from a hard magnetic film is adequate to enhance the sensitivity of a MI sensor with hard/soft magnetic multilayer structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.963-968
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• 2000

Magnetic properties and microstructures of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were investigated as a function of addition of element Ag, (X$\_$Ag/=0 to 6 at.%) and annealing temperature, T$\_$a/=300$\^{C}$ to 600$\^{C}$. In the case of adding Ag, magnetic properties of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were improved than those of Ag-free Fe$\_$93/Zr$_3$B$_4$thin films. The prominent soft magnetic properties with coercivity of 1.1 Oe, saturation magnetization of 2.2 T and permeability of 5400 at 50㎒ were obtained from Fe$\_$88/Zr$_3$B$_4$Ag$\_$5/ thin film annealed was lower than that of Fe-base or Co-base thin films reported previously. Such enhanced magnetic properties are presumably attributed to the format in ultra fine grains. Also, the reduced eddy current loss in the annealed sample is due to refined micro magnetic domains with increasing the amount of Ag in Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films.

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.197-200
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• 2006

Amorphous alloys of Co-rich magnetic amorphous films are well known as thpical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. CoFeHfO thin films were prepared by RF magnetron reactive sputtering. The films were deposited onto Si(100) substrates with a power of 300 W at room temperature. The reactive gas was introduced up to 10% ($O_2$/(Ar + $O_2$)) during deposition, and the $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film exhibit excellent soft magnetic properties : saturation magnetization ($4{\pi}M_s$) of 19kG, magnetic coercivity ($H_c$) of 0.37 Oe, anisotropy field ($H_k$) of 48.62 Oe, and an electrical property is also shown to be as high as 300 ${\mu}{\Omega}cm$. It is assumed that the good soft magnetic properties of $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film results from high electrical resistivity and large anisotropy field.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.601-605
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• 1995

Magnetic properties of FeTaN and FeTaC films deposited by DC magnetron reactive sputter were investigated, and correlated with their microstructures. The optimum magnetic properties of Hc : 0.25 Oe, Bs : 14.5 kG, and ${\mu}'$ : 4000 (5MHz) are observed in the $Fe_{78.8}Ta_{8.5}N_{12.7}$ film, and Hc : 0.25 Oe, Bs : 14.5 kG, and ${\mu}'$ : 2700 (5MHz) in the $Fe_{75.6}Ta_{8.1}C_{16.3}$ film. In both FeTaN and FeTaC films with minimum grain size show the best soft magnetic properties. Thermal stability of the soft magnetic properties of FeTaN is found to be higher than FeTaC for similar compositons. TaN and TaC particles form to retard the growth of $\alpha$-Fe grains. TaN particles in FeTaN show higher efficiency in retarding the grain growth during heat treatments resulting the higher thermal stability, compared to TaC particles in FeTaC films.