• Journal of the Korean Crystal Growth and Crystal Technology
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• 제25권5호
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 한국결정성장학회 1999년도 PROCEEDINGS OF KACG FALL MEETING, SEOUL, 4 DECEMBER, 1999
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• pp.93-99
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• 1999

It is definite trend that the functional devices are to be integrated by miniaturizing of individual components. Bulk crystals turn into wafer form, while thin film of the functional materials is being fabricated for single and multi-layer devices. In addition, single crystals with multi-function performance would be desirable for further miniaturization. crystal growers have the responsibility for synthesis single crystals work to meet ever increasing requirement of future devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제9권6호
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Journal of the Korean Ceramic Society
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• 제29권7호
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• pp.539-543
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• 1992

The continuous growth method was developed for Mn-Zn Ferrite single crystals. It is a new process that the polycrystalline MnχZn1-χFe2O4 raw materials are supplied continuously from the powder feeding system to the crucible heated by R.F. induction and melted in the crucible, and after the single crystals seed is attached to crucible's hole, the crystals are pulled downward with rotation. Growing the crystals by using the growth method different from the conventional Bridgman or Floating Zone method, we defined the factors having effect on the crystal growing through the pre-experiments. They are temperature distribution in the crucible, melt velocity according to its height, wettability between the crucible's bottom and melt. Therefore, Mn-Zn Ferrite single crystals were to be grown by attaining the appropriate melt height in the crucible, powder feeding rate, temperature gradient between the crucible and interface, crystal growing speed, and this method was confirmed to have possibility for single crystal growing.

• Proceedings of the KIEE Conference
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• 대한전기학회 2004년도 하계학술대회 논문집 D
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• pp.2489-2491
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• 2004

DC-Motor is needed more and more sophisticated control to follow the highest precision of industrial automation and used in a number of control equipment or industrial fields. It is also useful to control single crystal($A1_2O_3$) growth. It is possible to procure a quality crystal utilizing a DC-Motor, if you mix Hydrogen and Oxygen gas properly and keep proper temperature in accordance with time process. In this paper, we will study about electrical valve positioning system for the gas mixture to improve the quality of single crystal($A1_2O_3$) growth and we will design about realtime monitoring systems of the automatic gas control DC- Motor for single crystal($A1_2O_3$) growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.96-97
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• 2008

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 420 $^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at 630 $^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van def Pauw method are $9.24\times10^{16}cm^{-3}$ and 295 $cm^2/V{\cdot}s$ at 293 K, respectively.

• Journal of Magnetics
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• 제20권4호
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• pp.342-346
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• 2015

The nuclear magnetic resonance of the $^{23}Na$ nucleus in a $NaBrO_3$ single crystal was investigated at the temperature range of 200 K~410 K. The tendencies of temperature dependence of the nuclear quadrupole coupling for the two magnetically inequivalent Na(I) and Na(II) centers are found to be opposite to each other. The nuclear spin-lattice relaxation mechanism of $^{23}Na$ in the $NaBrO_3$ crystal is investigated, and the result revealed that the Raman process is dominant in the temperature range investigated. The relaxation process of the $^{23}Na$ nuclear spins was well described by a single exponential function in time. The $T_1$ values of the $^{23}Na$ nuclei in the $NaBrO_3$ single crystal decreased with increasing temperature. The calculated activation energy for the $^{23}Na$ is $0.032{\pm}0.002eV$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제26권4호
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• pp.135-138
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• 2016

It was observed that the single grain of crystallite growth behavior in AlN (Aluminum Nitride) single crystal growth by PVT (Physical Vapor Transport) method. The single grain of AlN was grown in sequent experiments and adjacent crystallites were joined together after small grain was grown. The sequential results of those grains observed by stereoscopic microscope were reported.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.224-233
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• 2002

A common YBCO powder has been made from a mixture of Y123 and Y211 that heated at different temperatures, respectively. The synthesis temperature of Y211 is lower than Y123. If Y211 has been heated as a synthesis temperature of Y123, a particle size of it may be very coarse. It exist as one of main defects for superconductor. But We simultaneously synthesize a YBCO(its composition is (Y123+0.4Y211)+$lwt%CeO_2$) using polymeric complex method. In the YBCO, the Y123 is synthesized lower temperature than other methodes, and its crystal structure is orthorombic. For measurement of these superconducting properties, we fabricated a YBCO single crystal. The manufactured YBCO single crystal is measured a magnetic distribution device using 0.5Tesla magnet and trapped magnet fields in it are 0.2Tesla.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제5권1호
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• pp.11-18
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• 1995

Abstract ${\Alpha} - Al_2O_3$ tube shaped single crystals were grown by the EFG method. By using two different heating arrangement, tube shaped single crystals were grown. Comparing the grown tube shaped single crystals, tube crystal growth conditions were established.