• Progress in Superconductivity
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• v.1 no.1
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• pp.31-35
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• 1999

We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-$T_c$ superconducting (HTS) $YBa_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed on the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height, t/h. The spread of step-edge junction parameters was measured from each 13 junctions with t/h=1/3, 1/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.196-199
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• 2009

We report the multiple quantum well (MQW) structure for highly efficient red phosphorescent OLEDs. Various triplet quantum well devices from a single well to five quantum wells are realized using a wide band-gap hole and electron transporting layers, narrow band-gap host and dopant material, and charge control layers (CCL). The maximum external quantum efficiency of 14.8 % with a two quantum well device structure is obtained, which is the highest value among the red phosphorescent OLEDs using same dopant.

• Carbon letters
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• v.21
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• pp.8-15
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• 2017

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.609-612
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• 1999

Organic electroluminescent(EL) devices have received a great deal of attention due to their potential application as full-color displays. They are attractive because of their capability of multicolor emission, ease of fabrication, and operation at a low driving voltage. In this study, single and multiple quantum-well structures consisting of Eu(TTA)$_3$(bpy) complex well layer sandwiched between triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent electroluminescent characteristics were also investigated. Sharp emission at 616 nm has been observed from the Eu complex in multilayer, single and multiple quantum-well structures. Details on the explanation of electrical properties of these structures will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.106-106
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• 2012

Strategies to facilitate carrier transfer/transport while preserving confined characteristics of isolated nanocrystal quantum dots (NQDs) will be discussed. Specifically, synthesis and characterizations of 1) the fabrication of neat NQD solids (assembled NQD films) with modified surfaces by attaching ligands or by applying physical processes such as heat annealing [J. Phys. Chem. C (2011), 115(3), 607] and 2) coupling NQDs to one-dimensional nanostructures such as single-walled carbon nanotubes (SWNTs) [ACS Nano, (2010) 4(1), 324] will be presented. Further, recent achievement ours of fabricating NQDs assemblies into photovoltaic devices for elucidating transfer mechanism witll be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.332-335
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• 2000

We fabricated organic electroluminescent (EL) devices with single layer of poly(3-dodeoylthiophene) (P3DoDT) hlended with different amounts of poly(N-vinylcarbazole) (PVK) as a emitting layer. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-brightness characteristics of devices applied LiF layer, current and brightness increased with increasing applied voltage. The brightness of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V. Electrical impedance properties of ITO/emitting layer/LiF/Al devices were investigated. In the Cole-Cole plots of impedance data, one semicircle was observed. Therefore, the equivalent circuit for the devices can be designed as a single parallel resistor and capacitor network with series resistor.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.133-133
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• 1999

We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-T$_c$ superconducting (HTS) YBa$_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height t/h. The spread of step-edge junction parameters was measured from each13 junctions with t/h=l/3, l/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K..

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.119-125
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• 1995

Strained multiple quantum well(SMQW) PBH-DFB-LDs emitting at 1.55$\mu$m wavelength has been fabricated using OMVPE and LPE crystal growth tecnique. Using the SMQW active layer, a linewidty enhancement factor of 2.65 was obtained at lasing wavelength and consequnently, packaged 42 modules showed a very low average chirp of 0.44nm at 2.5Gbps NRZ direct modulation. The 77 devices showed average threshold current of 8.72mA and average slope efficiency of 0.181 mW/mA, and single longitudinal mode operation with SMSR larger than 30dB up to 5mW. Among the 77 devices, standard deviation of lasing wavelength of 3.57nm was obtained owing to a good crystal growth uniformity.

• Progress in Superconductivity
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• v.5 no.1
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• pp.1-4
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• 2003

A five-year project for Nb-based single flux quantum (SFQ) circuits supported by Japan's Ministry of Economy Trade and Industry (METI) in Japan was started in September 2002. Since April 2003, the New Energy and Industrial Technology Development Organization (NEDO) has supported this Superconductor Network Device Project. The aim of the project is to improve the integration level of Nb-based SFQ circuits to several ten thousand Josephson junctions, in comparison with their starting integration level of only a few thousand junctions. Actual targets are a 20 GHz dual processor module for the servers and a 0.96 Tbps switch module for the routers. Starting in April 2003, the Nb project was merged with SFQ circuit research using a high-T$_{c}$ superconductor (HTS). The HTS research targets are a wide-band AD converter for mobile-phone base stations and a sampling oscilloscope for wide-band waveform measurements.

• ETRI Journal
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• v.34 no.6
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• pp.950-953
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• 2012

Schottky barrier single electron transistors (SB-SETs) and Schottky barrier single hole transistors (SB-SHTs) are fabricated on a 20-nm thin silicon-on-insulator substrate incorporating e-beam lithography and a conventional CMOS process technique. Erbium- and platinum-silicide are used as the source and drain material for the SB-SET and SB-SHT, respectively. The manufactured SB-SET and SB-SHT show typical transistor behavior at room temperature with a high drive current of $550{\mu}A/{\mu}m$ and $-376{\mu}A/{\mu}m$, respectively. At 7 K, these devices show SET and SHT characteristics. For the SB-SHT case, the oscillation period is 0.22 V, and the estimated quantum dot size is 16.8 nm. The transconductance is $0.05{\mu}S$ and $1.2{\mu}S$ for the SB-SET and SB-SHT, respectively. In the SB-SET and SB-SHT, a high transconductance can be easily achieved as the silicided electrode eliminates a parasitic resistance. Moreover, the SB-SET and SB-SHT can be operated as a conventional field-effect transistor (FET) and SET/SHT depending on the bias conditions, which is very promising for SET/FET hybrid applications. This work is the first report on the successful operations of SET/SHT in Schottky barrier devices.