Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and characterization of InGaAs/InGaAsP strained multiple quantum well PBH-DFB-LDs

압축응력 다중양자우물 구조 InGaAs/InGaAsP PBH-DFB-LD의 제작과 특성 평가

  • 이정기 (한국전자통신연구소 화합물반도체연구부) ;
  • 장동훈 (한국전자통신연구소 화합물반도체연구부) ;
  • 조호성 (한국전자통신연구소 화합물반도체연구부) ;
  • 박경현 (한국전자통신연구소 화합물반도체연구부) ;
  • 김정수 (한국전자통신연구소 화합물반도체연구부) ;
  • 김홍만 (한국전자통신연구소 화합물반도체연구부) ;
  • 박형무 (한국전자통신연구소 화합물반도체연구부)
  • Published : 1995.08.01
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Abstract

Strained multiple quantum well(SMQW) PBH-DFB-LDs emitting at 1.55$\mu$m wavelength has been fabricated using OMVPE and LPE crystal growth tecnique. Using the SMQW active layer, a linewidty enhancement factor of 2.65 was obtained at lasing wavelength and consequnently, packaged 42 modules showed a very low average chirp of 0.44nm at 2.5Gbps NRZ direct modulation. The 77 devices showed average threshold current of 8.72mA and average slope efficiency of 0.181 mW/mA, and single longitudinal mode operation with SMSR larger than 30dB up to 5mW. Among the 77 devices, standard deviation of lasing wavelength of 3.57nm was obtained owing to a good crystal growth uniformity.

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