• International Journal of Contents
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• v.11 no.3
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• pp.7-13
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• 2015

One of the biggest problems of skeletonization is the occurrence of distortions at the junction point of the final binary image. At the junction area, a single point usually becomes a small stroke, and the corresponding trajectory task, as well as the OCR, consequently becomes more complicated. We therefore propose an adaptive post-processing method that uses an adaptive threshold technique to correct the distortions. Our proposed method transforms the distorted segments into a single point so that they are as similar to the original image as possible, and this improves the static handwriting images after the skeletonization process. Further, we attained promising results regarding the usage of the enhanced skeletonized images in other applications, thereby proving the expediency and efficiency of the proposed method.

• Water for future
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• v.29 no.3
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• pp.129-142
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• 1996

This study investigates the magnitude of errors that can be expected in integrating sediment concentration in a vertical, basede on a single-point measurement, because of errors in input data. Potential error sources, including sampler location, water surface elevation, bed elevation, fall velocity, $\beta$ value, and $\kappa$ value were comparatively examined using data from a special study on the Rio Grande Conveyance channel in New Mexico. It is concluded that simple forms of equations for the vertical distribution of velocity and sediment concentration based on a single-point field sample of suspended sediment. The most uncertain point in the computation is related to the Rouse number z in the equation for the vertical concentration distribution of suspended sediment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.65-73
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• 2002

In this paper, we propose and verify an implementation method for a single-chip 2048 complex point FFT/IFFT in terms of sequential data processing. For the sequential processing of 2048 complex data, buffers to store the input data are necessary. Therefore, DRAM-like pipelined commutator architecture is used as a buffer. The proposed structure brings about the 60% chip size reduction compared with conventional approach by using this design method. The 16-point FFT is a basic building block of the entire FFT chip, and the 2048-point FFT consists of the cascaded blocks with five stages of radix-4 and one stage of radix-2. Since each stage requires rounding of the resulting bits while maintaining the proper S/N ratio, the convergent block floating point (CBFP) algorithm is used for the effective internal bit rounding and their method contributed to a single chip design of digital audio broadcasting system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.10 s.340
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• pp.55-64
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• 2005

In this paper, we designed floating point units to accelate real-time 3D Graphics for Geometry processing. Designed floating point units support IEEE-754 single precision format and we confirmed 100 MHz performance of floating point add/mul unit, 120 MHz performance of floating point NR inverse division unit, 200 MHz performance of floating point power unit, 120 MHz performance of floating point inverse square root unit at Xilinx-vertex2. Also, using floating point units, designed Geometry processor and confirmed 3D Graphics data processing.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.12
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• pp.1-9
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• 1997

The signaling protocol for B-ISDN should support variety of services including point-to-pont single-connection call, point-to-point multi-connection call and point-to-multipoint connection call. an efficient signaling protocol for point-to-point multi-connection call based on ITU-T Recommendation Q.298X is presented in this paper. Sequential establishment of madatory and optional connections and common routing scheme for synchronization, along with separation of information elements for establishement of multi-connection call are included in the proposed signaling protocol. Limited network resources can be used more efficiently by proposed sequential establishement of mandartory and optional connection for point-to-point multi-connection call which can provide multimedia services. And common routing can be provided effectively by proposed common routing scheme for connectios requiring synchronization like as video-phone and video-conference.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.76-77
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• 2005

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.318-325
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T^2/(T＋489\;K)$. After the as-grown $ZnIn_2S_4$ single crystal thin films were annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.3
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• pp.570-576
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• 2004

In this paper, we design the IFFT/FFT (Inverse fast Fourier Transform/Fast Fourier Transform) modules for IEEE 802.11a-1999, which is a standard of the High-speed Wireless LAN using the OFDM (Orthogonal Frequency Division Multiplexing). The designed IFFT/FFT is the 64-point FFT to be compatible with IEEE 802.11a and the pipelined architecture which needs neither serial-to-parallel nor parallel-to-serial converter. We compare four types of IFFT/FFT modules for the hardware complexity and operation : R22SDF (Radix-2 Single-path Delay feedback), the R2SDF (Radix-2 Single-path Delay feedback), R2SDF (Radix-4 Single-path Delay Feedback), and R4SDC (Radix-4 Single-path Delay Commutator). In order to minimize the error, we design the IFFT/FFT module to operate with additional decimal parts after butterfly operation. In case of the R22SDF, the IFFT/FFT module has 44,747 gate counts excluding RAMs and the minimized error rate as compared with other types. And we know that the R22SDF has a small hardware structure as compared with other types.