• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.298-298
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• 2010

In this study, both structural, dielectric properties of the NKN-0.94BNT-0.06BT ceramics were investigated. All samples of the NKN-0.94BNT-0.06BT ceramics were fabricated by conventional mixed oxide method with Pt electrodes. We report the improved electrical properties in the perovskite structure composed of the NKN, BNT and the BT ceramics. We investigated the effects of NKN, BT on the structural and electrical properties of the NKN-0.94BNT-0.06BT ceramics. The dielectric and structural properties of the NKN-0.94BNT-0.06BT ceramics were superior to those of single composition NKN, NKN-BNT and those values for the NKN-0.94BNT-0.06BT ceramics were 1455, 0.025 and $29.04{\mu}C/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.192-192
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• 2010

DAPAS (Development of Advanced Power system by Applied Superconductivity technologies) program that the, superconductivity national program has been started one of the 21C frontier programs from 2001 in Korea. The 3rd phase of DAPAS program was started at April 2007, and the ultimate goal of HTS cable project is to develop 154kV, 1GVA class HTS cable. The structure of 154kV, 1GVA HTS cable is single core with cold dielectric insulation. The cable core consists of the former, conduction layer, electrical insulation layer, shielding layer. The cable cryostat consists of two corrugated seamless aluminum tubes as its high sealing reliability, the tubes separated through a spacer arrangement. Outdoor termination was developed by LS cable and cryogenic system by CVE for 154kV, 1GVA class HTS cable. The 154kV, 1GVA HTS cable will be installed and be tested in KEPCO Gochang Testing Center from June 2010.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2007년도 추계 학술대회논문집
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• pp.60-66
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• 2007

Separation control has been performed using synthetic jets on airfoil at high angle of attack. Computed results demonstrated that stall characteristics and control surface performance could be substantially improved by resizing separation vortices. It was observed that the actual flow control mechanism and flow structure is fundamentally different depending on the range of synthetic jet frequency. For low frequency range, small vortices due to synthetic jet penetrated to the large leading edge separation vortex, and as a result, the size of the leading edge vortex was remarkably reduced. For high frequency range, however, small vortex did not grow up enough to penetrate into the leading edge separation vortex. Instead, synthetic jet firmly attached the local flow and influenced the circulation of the virtual airfoil shape which is the combined shape of the main airfoil with the separation vortex. Theses results show the characteristic of unsteady flow of single synthetic jet. Beside, we researched on multi-array synthetic jet to obtain applicable synthetic jet velocity. Multi-location synthetic jet is proposed to eliminate small vortex on suction surface of airfoil. With the results, we concluded that the flow around airfoil is stable by high frequency synthetic jet with elimination of small vortex and confirmation of stable flow. Moreover, performance of multi-array/multi-location synthetic jet can be improved by changing phase angle of multi-location synthetic jet.

• 대한기계학회논문집A
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• 제29권3호
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• pp.462-469
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• 2005

Single phase bainite structure which is obtained by the conventional austempering treatment reduces the ductility of ductile cast iron. Because of the reduction of ductility it is possible to worsen the fatigue properties. Therefore, semi austempered ductile iron which is treated from ${\alpha}+{\gamma}$ is prepared to investigate the static strength and fatigue properties in comparison with fully austempered ductile iron (is treated from ${\gamma}$). In spite of semi austempered ductile iron shows the $86{\%}$ increase of ductility. Also, semi austempered ductile iron shows the higher fatigue limit and lower fatigue crack growth rate as compared with fully austempered ductile iron. By the fractographical analysis, it is revealed that the ferrite obtained by semi austempering process brings about the plastic deformation(ductile striation) of crack tip and gives the prior path of crack propagation. The relatively low crack growth rate in semi austempered specimen is caused by above fractographical reasons.

• 열처리공학회지
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• 제13권6호
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• pp.398-404
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• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1437-1439
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• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.330-333
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• 2017

$Co_xMn_{3-x}O_4$ ($1.48{\leq}x{\leq}1.63$) ceramics were fabricated using the solid-state reaction method. Structural and electrical properties of specimens based on the composition ratio of Co were observed in order to investigate their applicability in NTC thermistors. All specimens showed a single spinel phase with a homogeneous tetragonal structure. The $Co_{1.57}Mn_{1.43}O_4$ specimen showed a maximum average grain size of approximately $6.47{\mu}m$. In all specimens, TCR properties displayed excellent characteristics of over $-4.2%/^{\circ}C$. The resistivity at 298 K and B-value of the $Co_{1.57}Mn_{1.43}O_4$ specimen were approximately $418{\Omega}-cm$ and 4300, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• 지역연구
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• 제14권2호
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• pp.65-75
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• 1998

Education is widely recognized one of main sources for growth. This paper attempts to incorporate the general recognition into formal regional growth model. The model structure is largely neoclassical. It produces a single good with the two factors, educated labor and non-educated labor, via a constant return production migrating to the region with the higher real wage. The educated labor in a region is accumulated by two sources, migration and physical education capital, while the non-educated labor is by only migration. The paper shows that regional growth equilibrium is characterized as a saddle point. This indicates the presence of the minimum threshold size that must be overcome before a region may grow. It contrasts sharply with results obtained in regional growth models. The paper suggests that regional growth is determined less by the technical characteristics of regional production function characteristics of regional production function but by the stock combination of educated function but by the stock combination of education labor and non-educated labor. Based on this result, the impact of agglomeration economies on regional growth is explored. It is by phase diagram demonstrated that the presence of agglomeration economies do not always lead a region to growth since there still exists the minimum threshold even in the presence of agglomeration economies.