• 대한기계학회논문집A
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• 제38권2호
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• pp.105-113
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• 2014

중앙에 균열을 갖는 단층 그래핀시트(single layer graphene sheet, SLGS)의 모드 II 파괴 거동을 원자 시뮬레이션과 해석 모델에 기초하여 고찰하였다. 지그재그 그래핀 모델의 파괴를 분자동역학(molecular dynamics, MD)에 의해 해석한 결과 모드 II 파괴인성은 $2.04MPa{\sqrt{m}}$인 것으로 밝혀졌다. 또한 SLGS의 이론적인 $K_{IIc}$를 유도하기 위해 면내전단하중을 받는 다공체에 대한 파괴역학적 해석도 진행하였고 유한요소해석도 병행하였다. 모드 I과 모드 II의 비를 다양하게 변화시켜가면서 SLGS 의 혼합모드 파괴를 검토한 결과 혼합모드 파괴조건식이 얻어졌고 다른 문헌의 결과와 비슷함을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.107-107
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• 2012

Recently, large-area synthesis of high-quality but polycrystalline graphene has been advanced as a scalable route to applications including electronic devices. The presence of grain boundaries (GBs) may be detrimental on some electronic, thermal, and mechanical properties of graphene, including reduced electronic mobility, lower thermal conductivity, and reduced ultimate mechanical strength, yet on the other hand, GBs might be beneficially exploited via controlled GB engineering. The study of graphene grains and their boundary is therefore critical for a complete understanding of this interesting material and for enabling diverse applications. I present that scanning electron diffraction in STEM mode makes possible fast and direct identification of GBs. We also demonstrate that dark field TEM imaging techniques allow facile GB imaging for high-angle tilt GBs in graphene. GB mapping is systematically carried out on large-area graphene samples via these complementary techniques. The study of the detailed atomic structure at a GB in suspended graphene uses aberration-corrected atomic resolution TEM at a low kV.

• Carbon letters
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• 제28권
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• pp.1-8
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• 2018

Graphene is a single atomic layer of carbon atoms, and has exceptional electrical, mechanical, and optical characteristics. It has been broadly utilized in the fields of material science, physics, chemistry, device fabrication, information, and biology. In this review paper, we briefly investigate the ideas, structure, characteristics, and fabrication techniques for graphene applications in lithium ion batteries (LIBs). In LIBs, a constant three-dimensional (3D) conductive system can adequately enhance the transportation of electrons and ions of the electrode material. The use of 3D graphene and graphene-expansion electrode materials can significantly upgrade LIBs characteristics to give higher electric conductivity, greater capacity, and good stability. This review demonstrates several recent advances in graphene-containing LIB electrode materials, and addresses probable trends into the future.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.575-575
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• 2012

Synthesis of novel two dimensional materials has gained tremendous attention recently as they are considered as alternative materials for replacing graphene that suffers from a lack of bandgap, a property that is essential for many applications. Single layer molybdenum disulfide ($MoS_2$) has a direct bandgap (1.8eV) that is promising for use in next-generation optoelectronics and energy harvesting devices. We have successfully grown high quality single layer $MoS_2$ by a facile vapor-solid transport route. As-grown single layer $MoS_2$ was carefully characterized by using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy and electrical transport measurement. The results indicate that a high quality single layer $MoS_2$ can be successfully grown on silicon substrate. This may open up great opportunities for the exploration of novel nanoelectronic devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.368-368
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• 2010

Monolayers of graphite can be grown by fine controlled surface graphitization on the surfaces of various metallic and semiconducting materials. Epitaxial graphene grown on polished silicon carbide crystal surfaces has drawn much attention due to well known vacuum annealing procedures from surface analysis methods, especially scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). In this study, we have grown single layer and few layer graphene on silicon terminated 6H-SiC(0001) crystals. The growth of graphene layers were observed by low energy electron diffraction(LEED) patterns. Scanning tunneling microscopy and spectroscopy measurements were performed to illustrate the electronic structure which may display some clue on the influence of the underlying structure. Spatially resolved STS results acquired at the edges of epitaxial graphene show in detail the electron density of states, which is compared to theoretical calculations. STM measurements were also done on graphene films grown by chemical vapor deposition(CVD) and transferred onto a SiC(0001) crystal. These observations may provide a hint for the understanding of carrier scattering at the edges.

• 한국전자파학회논문지
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• 제26권9호
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• pp.837-840
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• 2015

그래핀은 한 원자 두께의 탄소재료로서 전자가 매우 빠른 속도로 이 층을 통과할 수 있기 때문에, 트랜지스터를 비롯한 다양한 디바이스 응용을 위한 연구가 수행되어 왔다. 높은 전자이동도 특성으로 인해 높은 주파수 대역이나 고속 스위치 등의 시스템 응용에 적합하다. 본 연구에서는 양산에 적합한 RT-CVD(Rapid Thermal Chemical Vapor Deposition) 공정을 이용하여 실리콘 기판 상에 그래핀 층을 형성하고, 다양한 공정조건 최적화를 통해 $7,800cm^2/Vs$의 전자이동도를 추출하였다. 이는 실리콘 기판의 7배 이상 되는 값이고, GaAs 기판보다도 높은 수치이다. 밴드갭이 존재하지 않는 그래핀 기반 트랜지스터 모델링을 위해 pMOS와 nMOS의 모델을 융합하여 적용하였고, 실험을 통해 추출된 전자이동도 값을 적용하였다. 추출된 모델을 이용하여 트랜지스터의 핵심 파라미터 중의 하나인 게이트의 길이와 폭 등에 따른 전기적 특성을 고찰하였다.

• 한국재료학회지
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• 제28권5호
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• pp.279-285
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• 2018

Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.2139-2142
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• 2014

A one-pot, facile and ecofriendly approach to the fabrication of covalently fluorinated graphene using mild reaction conditions is reported. This straightforward and efficient strategy allows fluorine groups to be covalently and stably anchored onto graphene to produce single-layer functionalized graphene sheets from a graphene oxide precursor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.53-53
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• 2010

Graphene comes into the spotlight as an emergent device material on account of its high carrier mobility reflecting its massless Dirac fermion behavior. Chemical technique to control reversibly the carrier concentration of semiconducting graphene for the achievement of a large-area graphene device has been strongly required. Here we show that the adsorptions of a metal and a molecule can manipulate the carrier concentration of single-layer graphene, epitaxially grown on SiC, which was directly observed using angle-resolve photoemission spectroscopy. These results will shed light on the researches for the very large scale integration of a graphene device. Furthermore, the carrier concentration changes can be applied to a highly sensitive gas sensor or a detector for an specific binding between an antigen and an antibody.

• 한국결정성장학회지
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• 제22권2호
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• pp.84-91
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• 2012

Single and few-layer graphene nanosheets (GNs) have successfully synthesized by a modified Hummer's method followed by chemical reduction of exfoliated graphene oxide (GO) in the presence of hydrazine monohydrate. GO and GNs were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), X-ray diffractions (XRD), Raman spectroscopy, Transmission electron microscopy (TEM), Atomic force microscopy (AFM), Optical microscopy (OM) and by electrical conductivity measurements. The result showed that electrical conductivity of GNs was significantly improved, from $4.2{\times}10^{-4}$ S/m for GO to 12 S/m for GNs, possibly due to the removal of oxygen-containing functional group during chemical reduction. In addition, the $NO_2$ gas sensing characteristics of GNs are also discussed.