Growth and Structural Characterization of Single Layer Dichalcogenide $MoS_2$

Synthesis of novel two dimensional materials has gained tremendous attention recently as they are considered as alternative materials for replacing graphene that suffers from a lack of bandgap, a property that is essential for many applications. Single layer molybdenum disulfide ($MoS_2$) has a direct bandgap (1.8eV) that is promising for use in next-generation optoelectronics and energy harvesting devices. We have successfully grown high quality single layer $MoS_2$ by a facile vapor-solid transport route. As-grown single layer $MoS_2$ was carefully characterized by using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy and electrical transport measurement. The results indicate that a high quality single layer $MoS_2$ can be successfully grown on silicon substrate. This may open up great opportunities for the exploration of novel nanoelectronic devices.