• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.1-6
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• 2004

In this paper author describe the undoped and $Co^{2+}$ (0.5mole%)doped $Cd_4GeS_6$ single crystals were grown by the chemical transporting reaction(CTR) method using high purity(6N) Cd, $GeS_2$, S elements. It was found from the analysis of X-ray diffraction that the undoped and $Co^{2+}$(0.5mole%) doped $Cd_{4}GeS_{6}$ compounds have a monoclinic structure in space grop Cc. The optical energy band gap was direct band gap and temperature dependence of optical energy gap was fitted well to Varshni equation. Impurity optical absorption peaks due to the doped cobalt in the $Cd_4GeS_6:Co^{2+}$ single crystal were observed at 3593cm-1, 5048cm-1, 5901cm-1, 7322cm-1, 12834cm-1, 13250cm-1, 14250cm-1，and 14975cm-1 at 11.3K.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.88-93
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• 2002

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}:Co^{2+}$ + single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a= 5.5966A. c= 10.8042${{\AA}}$ for the pure. a= 5.6543${{\AA}}$. c= 10.8205${{\AA}}$ for the Co-doped single crystal. respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity. Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation. we can deduced the entropy. enthalpy and heat capacity. Also. we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.275-281
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• 2003

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a=5.5966$\AA$, c=10.8042$\AA$ for the pure, a=5.6543$\AA$, c=10.8205$\AA$ for the Co-doped single crystal, respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation, we can deduced the entropy, enthalpy and heat capacity. Also, we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_{d}$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• The Journal of Advanced Prosthodontics
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• v.6 no.4
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• pp.253-258
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• 2014

PURPOSE. To compare marginal and internal gaps of zirconia substructure of single crowns with those of three-unit fixed dental prostheses. MATERIALS AND METHODS. Standardized Co-Cr alloy simulated second premolar and second molar abutments were fabricated and subsequently duplicated into type-III dental stone for working casts. After that, all zirconia substructures were made using $Lava^{TM}$ system. Marginal and internal gaps were measured in 2 planes (mesial-distal plane and buccal-palatal plane) at 5 locations: marginal opening (MO), chamfer area (CA), axial wall (AW), cusp tip (CT) and mid-occlusal (OA) using Replica technique. RESULTS. There were significant differences between gaps at all locations. The $mean{\pm}SD$ of marginal gap in premolar was $43.6{\pm}0.4{\mu}m$ and $46.5{\pm}0.5{\mu}m$ for single crown and 3-unit bridge substructure respectively. For molar substructure the $mean{\pm}SD$ of marginal gap was $48.5{\pm}0.4{\mu}m$ and $52.6{\pm}0.4{\mu}m$ for single crown and 3-unit bridge respectively. The largest gaps were found at the occlusal area, which was $150.5{\pm}0.5{\mu}m$ and $154.5{\pm}0.4{\mu}m$ for single and 3-unit bridge premolar substructures respectively and $146.5{\pm}0.4{\mu}m$ and $211.5{\pm}0.4{\mu}m$ for single and 3-unit bridge molar substructure respectively. CONCLUSION. Independent-samples t-test showed significant differences of gap in zirconia substructure between single crowns and three-unit bridge (P<.001). Therefore, the span length has the effect on the fit of zirconia substructure that is fabricated using CAD/CAM technique especially at the occlusal area.

• The Journal of Advanced Prosthodontics
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• v.9 no.4
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• pp.239-243
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• 2017

PURPOSE. The purpose of this study is to compare single and three-unit metal frameworks that are produced by micro-stereolithography. MATERIALS AND METHODS. Silicone impressions of a selected molar and a premolar were used to make master abutments that were scanned into a stereolithography file. The file was processed with computer aided design software to create single and three-unit designs from which resin frameworks were created using micro-stereolithography. These resin frameworks were subjected to investment, burnout, and casting to fabricate single and three-unit metal ones that were measured under a digital microscope by using the silicone replica technique. The measurements were verified by means of the Mann-Whitney U test (${\alpha}=.05$). RESULTS. The marginal gap was $101.9{\pm}53.4{\mu}m$ for SM group and $104.3{\pm}62.9{\mu}m$ for TUM group. The measurement of non-pontics in a single metal framework was $93.6{\pm}43.9{\mu}m$, and that of non-pontics in a three-unit metal framework was $64.9{\pm}46.5{\mu}m$. The dimension of pontics in a single metal framework was $110.2{\pm}61.4{\mu}m$, and that of pontics in a three-unit metal framework was $143.7{\pm}51.8{\mu}m$. CONCLUSION. The marginal gap was smaller for the single metal framework than for the three-unit one, which requires further improvement before it can be used for clinical purposes.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.2
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• pp.36-46
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• 1984

The Ga1-xInxSe single crystals for 0.0 < x < 0.1 and 0.8 < 1.0 were grown by the Bridgman method. The crystal structure of Ga1-xInxSe is found to be hexagonal for 0.0 < X < 1.0. The Ga1-xInxSesingle crystals have indirect energy gap with a temperature coefficient dEg/dT= -(2.4 - 4.3) $\times$ 10-4 eV/K in the range 60-250K. The temperature dependence of the energy gap can be explained by the electron-Phonos interaction model.

• International Journal of Naval Architecture and Ocean Engineering
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• v.4 no.2
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• pp.71-82
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• 2012

In recent practices, a half circular prismatic bar protruding beyond the concave surface of the horn facing the gap has been formed along the centerplane of a rudder to lessen the gap flow between the horn and the movable portion of the rudder system. If a flow through the gap of a rudder is reduced considerably through this approach, previous numerical studies indicate that not only the gap flow but also the rudder cavitation can be noticeably diminished. In the present study, numerical simulations on two-dimensional rudder sections were performed to show that the blocking ability of the single centre bar can be improved by the proper choice of sectional shape. Moreover, a pair of blocking bars attached symmetric to the centerplane on the opposite convex surface of the movable portion is suggested in the study as well, to circumvent the difficulties arising from the practical application of the single centre bars. The bars are placed near the outer edges of the gap easily accessible at the maximum rudder angle to allow simple installation of the device during a maintenance period of a ship. It is found that the pair of blocking bars further improves the blocking effects and application to a practical three-dimensional rudder also backs up the fact.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.340-343
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• 2008

This work reports the simple fabrication of the single cell gap transflective liquid crystal display (LCD) using wire grid polarizer. The nano sized wire grid polarizer was patterned on common electrode itself, on the reflective part of FFS (Fringe field switching) mode whereas the common electrode was unpatterned at transmissive part. However, this structure didn't show single gamma curve, so we further improved the device by patterning the common electrode at transmissive part. As a result, V-T curve of proposed structure shows single gamma curve. Such a device structure is free from in-cell retarder, compensation film and reflector and furthermore it is very thin and easy to fabricate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.312-313
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• 2008

A transflective liquid crystal displays associated with fringe field switching (FFS) mode of new concept is proposed. The device utilizes unique characteristic of the FFS mode in which the rotation angle of LC director is strongly dependent on electrode position in on state. We use the liquid crystal with negative dielectric anisotropy. Also we are look for optimized electrode size and the optimization of pixel electrode width and distance between them, the LC director could rotate about $22.5^{\circ}$ and $45^{\circ}$ depending on electrode positions. Consequently, we get high transmittance and high reflection on the optimized electrode condition. Respectively, a high image quality transflective display with single gap and single gamma characteristics realized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.