Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Crystal Growth of Cd4GeS6 and Cd4GeS6:Co2+Single Crystals

$Cd_{4}GeS_{6}$ 및 $Cd_{4}GeS_{6}:Co^{2+}$ 단결정의 성장

  • 김덕태 (동아인제대학 예체능공학부) ;
  • 김형곤 (동아인제대학 예체능공학부) ;
  • 김남오 (조선이공대학 전기과)
  • Published : 2004.11.19
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Abstract

In this paper author describe the undoped and $Co^{2+}$ (0.5mole%)doped $Cd_4GeS_6$ single crystals were grown by the chemical transporting reaction(CTR) method using high purity(6N) Cd, $GeS_2$, S elements. It was found from the analysis of X-ray diffraction that the undoped and $Co^{2+}$(0.5mole%) doped $Cd_{4}GeS_{6}$ compounds have a monoclinic structure in space grop Cc. The optical energy band gap was direct band gap and temperature dependence of optical energy gap was fitted well to Varshni equation. Impurity optical absorption peaks due to the doped cobalt in the $Cd_4GeS_6:Co^{2+}$ single crystal were observed at 3593cm-1, 5048cm-1, 5901cm-1, 7322cm-1, 12834cm-1, 13250cm-1, 14250cm-1，and 14975cm-1 at 11.3K.

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