• Journal of the Korean Ceramic Society
• /
• v.42 no.5 s.276
• /
• pp.359-365
• /
• 2005

Silicon nitride coating films with various ratios of nitrogen to silicon contents were prepared and characterized. The film was coated on silicon substrate by sputtering method with changing nitrogen gas flow rate in a chamber. The nitrogen to silicon ratio was found to have values in a range from 0 to 1.4. Coated film was characterized with scanning electron microscopy, transmission electron microscopy, electron probe microanalysis, nanoindentation scanning probe microscopy, x-ray photon spectrometry, and Raman spectrometry. Silicon nitride phase in all samples showed amorphous nature regardless of N/Si ratio. When N/Si ratio was 1.25, hardness and elastic modulus of silicon nitride film showed maximum with 22 GPa and 210 GPa, respectively. Those values decreased, when N/Si ratio was higher than 1.25. Raman spectrum showed that no silicon phase exist in the film. XPS result showed that the silicon-nitrogen bond was dominant way for atomic bonding in the film. The structure and property was explained with Random Bonding Model(RBM) which was consistent with the microstructure and chemistry analysis for the coating films.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.211.1-211.1
• /
• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.4
• /
• pp.89-93
• /
• 2018

Ceramic substrates applied to power modules of electric vehicles are required to have properties of high thermal conductivity, high electrical insulation, low thermal expansion coefficient and resistance to abrupt temperature change due to high power applied by driving power. Aluminum nitride and silicon nitride, which are applied to heat dissipation, are considered as materials meeting their needs. Therefore, in this paper, the properties of aluminum nitride and silicon nitride as radiator plate materials were compared through a commercial analysis program. As a result, when the process of applying heat of the same condition to aluminum nitride was implemented by simulation, the silicon nitride exhibited superior impact resistance and stress resistance due to less stress and warping. In terms of thermal conductivity, aluminum nitride has superior properties as a heat dissipation material, but silicon nitride is more dominant in terms of reliability.

• Journal of the Korean Ceramic Society
• /
• v.49 no.4
• /
• pp.352-362
• /
• 2012

This paper explores the use of a variety of carbon nanoparticles to impart electrical, thermal conductivity, good frictional properties to silicon nitride matrices. We used the highly promising types of carbon as carbon nanotubes, exfoliated graphene and carbon black nanograins. A high-efficiency attritor mill has also been used for proper dispersion of second phases in the matrix. The sintered silicon nitride composites retained the mechanical robustness of the original systems. Bending strength as high as 700 MPa was maintained and an electrical conductivity of 10 S/m was achieved in the case of 3 wt% multiwall carbon nanotube addition. Electrically conductive silicon nitride ceramics were realized by using carbon nanophases. Examples of these systems, methods of fabrication, electrical percolation, mechanical, thermal and tribological properties are discussed.

• Journal of the Korean Ceramic Society
• /
• v.33 no.3
• /
• pp.277-284
• /
• 1996

The water test results indicated that the impurities had detrimetal effect on the wear resistance of silicon nitride and the effects were getting severe as the temperature increased. Especially when Ca existed as an impurity the detrimental effects was the most severe. These results were resulted from the fact that impurities lowered the mechanical properties of the grain boundary phase of silicon nitride. The wear test results of glass/glass-ceramic specimens having a similar composition to the grain boundary phase of silicon nitride revea-led that the specimen containing CaO showed the lowest wear resistance. The existence of Fe and Ca at the grain boundary phase assisted forming a grain boundary phase with relatively low refractoriness. Therefore at a given wear condition the removal of deformed layer would be easier. The results showed that the glass phases could be modified by heat-treatment and this modification improved tribological characteristics of the silicon nitride.

• Journal of the Korean Ceramic Society
• /
• v.39 no.8
• /
• pp.715-720
• /
• 2002

Silicon nitride samples with aligned whisker seeds were prepared with different amounts of yttria and alumina as the sintering additives. Their sintering behaviors and the microstructural developments between 2123K and 2323K were examined. The sample with larger amount of the sintering additives showed faster densification and grain growth. Even though addition of the aligned whisker seeds slightly retarded densification of silicon nitride, it improved the flexural strength and the fracture toughness. Both the flexural strength and the fracture toughness of silicon nitride with the aligned whisker seeds were increased as the amount of the sintering additives was increased.

• Tribology and Lubricants
• /
• v.11 no.5
• /
• pp.78-86
• /
• 1995

The silicon nitride based ceramic cutting tool materials have been fabricated by gas pressure sintering (GPS) or hot pressing (HP). Their mechanical properties were measured and the effect of the fabrication variables on the properties were examined. Also, effect of adding TiN or TiC particulates on the mechanical properties of the silicon nitride ceramics were investigated. Ceramic cutting tools (ISO 120408) were made of the sintered bodies. Cutting performance test were performed on either conventional or NC lathe. The workpieces were grey cast iron, hardened alloy steel (AISI 4140, HRc>60) and Ni-based superalloy (Inconel 718). The results showed that fabrication variables, namely, sintering temperature and time, exerted a strong influence on the microstincture and mechanical properties of the sintered body, which, however, did not make much difference in wear resistance of the tools. High hardness of the tool containing TiC particulates exhibited good cutting performance. Extensive crater wear was observed on both monolithic and TiN-containing silicon nitride tools after cutting the hardened alloy steel. Inconel 718 was extremely difficult to cut by the current cutting tools.

• The Korean Journal of Ceramics
• /
• v.4 no.4
• /
• pp.331-335
• /
• 1998

R-curve, of three kinds of silicon nitride-based ceramics were measured, using single edge notched beam (SENB) method at room and at elevated temperatures, up to $1200^{\circ}C$. Stable fraacture was seen on ceramic materials with SENB specimens if the machined notch is deep enough, even though the crack resistance did not increase with crack length. Hot pressed silicon nitride did not show the rising R-curve behavior at room temperature, but it showed some rising at $1000^{\circ}C$ and above. Si3N4 reinforced with SiC whiskers showed no rising behavior at room and elevated temperatures, as it has smaller grain size, compare to the monolithic specimen. Gas pressure sintered silicon nitride had very large and elongated grains, and it showed rising R-curve even at room temperature. However, it showed some creep behavior at $1200^{\circ}C$ and the calculated R-curve on this condition did not show a good result. We cannot apply this technique on this condition for obtaining the R-curve.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.268-269
• /
• 2006

Preparation processing of sintered silicon nitride ceramics was emphatically investigated with Self-Propagating High-Temperature Synthesis (SHS) of silicon nitride prepared by ourselves as raw material. The results indicate that good sinter ability can be obtained with cheaply SHS of silicon nitride preparing silicon nitride materials. The cost of silicon nitride materials will be lowered.

• Journal of the Korean institute of surface engineering
• /
• v.22 no.4
• /
• pp.215-220
• /
• 1989

Silicon Nitride whose thickness is about $100\AA$by the ellipsometer was successfully formed by the Plasma reaction. Nitrogen Plasma was formed by applying the 200KHz, 500Watt power between the two electroes and nitridation of silicon was carried out directly on the top of the silicon wafer. Thus Silicon Nitride formed was oxidized to from oxynitrides and their electrical characterlstice were analyzed by measuring I-V curves and capacitances. Through ESCA depth profiles, the chemical composition changes before and after the oxidation wers analyzed.