• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.640-645
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• 1987

Surface states and interfacial phenomena at the undoped polycrystalline semiconductor particale-electrolyte interfaces were qualitatively analyzed based on the zeta potentials which were measured with microelectrophoresis measurements. The suspensions were composed of the undoped polycrystaline silicon(Si) or gallium arsenide (GaAs) semiconductor particles stalline Si and GaAs particles in the KCl electrolytes was 3.73~6.2x10**-4 cm\ulcornerV.sec and -2.3~1.4x10**-4cm\ulcornerV.sec at the same conditions, respectively. The range of zeta potentials corresponding to the electrophoretic mobilities is 47.8~80.1mV and -30.1~17.9mV, respectively. The variation of the zeta potentials of the undoped polycrystalline Si was similar to the doped crystalline Si. On the other hand, two points of zeta potential reversal occurred at the undoped polycrystalline GaAs-KCl electrolyte interfaces. The surface states of the undoped polycrystalline Si and GaAs were dominated by positively charged donor surface states. These surface states are attributed to adsorbed ion surface states (slow states) at the semiconductor oxide layer-electrolyte interfaces.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.17-23
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• 2003

A sensor array (3${\times}$5$\textrm{mm}^2$ in diaphragm dimension) of 12 sensing clements with different operating temperatures was optimized with respect to thermal operation. This sensor array with single heater on a glass diaphragm over back-etched silicon bulk realizes a novel concept of a sensor array: an array of sensor clements operated at different temperatures can yield more information than single measurement. The proposed micro sensor array could provide well-integrated array structure because it had only single heater at the center of the diaphragm and used the various sensing properties of two kinds of metal oxide layers with various operating temperatures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.10-15
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• 2006

Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.26-29
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• 2004

High density plasma fluorinated silicate glass (HDP FSG) is used as a gap fill film for metal-to-metal space because of many advantages. However, FSG films can cause critical problems such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. It is known that these problems are caused by fluorine penetration out of FSG film. To prevent it, FSG capping layers such like SRO (Silicon Rich Oxide) are needed. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated. Normal stress and High stress due to denser film. While heat treatment to PETEOS caused lower blocking against fluorine penetration, it had insignificant effect on SiN. Compared with other layers, SRO using ARC chamber and SiN were shown a better performance to block fluorine penetration.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1421-1423
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• 1996

In this study, the effect of solar cell cover glass on the solar cell performance is evaluated. Silicon solar cell (active area:4*6cm, efficiency:12.6% at AMO condition) is used for this study. ITO(Indium tin Oxide) film thickness of the ITO/AR/substrate glass/solar cell structure samples are $40{\AA}$, $60{\AA}$, $160{\AA}$, $240{\AA}$ respectively. The solar cell maximum output power on the stacking structure variations showed 465mW in the AR/ITO/substrate glass/solar cell, and minimum output power showed 403mW in the AR/substrate glass/solar cell. The maximum output power of the solar cell on the ITO thickness variations of the ITO/AR/substrate glass/solar cell showed 460mW at $40{\AA}$ then decrease output power as ITO thickness increase. For environment tests, all samples are exposed UV light in the vacuum chanber. The output power degradation of AR(UVR)/substrate glass/solar cell stacking structure is small compared with ITO/AR(UVR)/substrate glass/solar cell stacking structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.481-485
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• 2015

We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process. The ZTO/SiC heterojunction structures annealed at $500^{\circ}C$ show that $I_{on}/I_{off}$ increases from ${\sim}5.13{\times}10^7$ to ${\sim}1.11{\times}10^9$ owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction has been carried out in the temperature range of 300~500 K. When the measurement temperature increased from 300 K to 500 K, the reverse current variation of annealed device is higher than as-grown device, which is related to barrier height in the ZTO/SiC interface. It is shown that annealing process is possible to control the electrical characteristics of ZTO/SiC heterojunction diode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.155-160
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• 2020

Ga₂O₃/n-type 4H-SiC heterojunction diodes were fabricated by RF magnetron sputtering. The optical properties of Ga₂O₃ and electrical properties of diodes were investigated. I-V characteristics were compared with simulation data from the Atlas software. The band gap of Ga₂O₃ was changed from 5.01 eV to 4.88 eV through oxygen annealing. The doping concentration of Ga₂O₃ was extracted from C-V characteristics. The annealed oxygen exhibited twice higher doping concentration. The annealed diodes showed improved turn-on voltage (0.99 V) and lower leakage current (3 pA). Furthermore, the oxygen-annealed diodes exhibited a temperature cross-point when temperature increased, and its ideality factor was lower than that of as-grown diodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.180-180
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• 2010

The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.331-331
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• 2014

3족 질화물에 기반한 발광다이오드는 비소화물이나 인화물에 비해 여러 가지 장점을 가져 각광받아왔다. 특히, (Al)GaN 에 기반한 자외선 영역 발광 다이오드는 자외선 경화, 소독 등의 여러 가지 응용 가능성을 가진다 [1]. 하지만, 심자외선 영역으로 갈수록 높은 접촉 저항과 투명전극에서의 광흡수에 의해 전류주입 효율과 광추출 효율이 감소하여 결국 외부양자 효율이 더욱 열화되는 특성을 보인다. 이는 넓은 밴드갭을 가지는 물질을 이용하여 p-(Al)GaN 층에서 오믹접촉을 이루어야만 해결이 가능하지만 아직까지 이러한 결과가 보고된 바 없다. 본 연구에서는, 우리는 넓은 밴드갭을 가지는 silicon dioxide (SiO2) 에 전기장을 인가하여 p-GaN, and p-AlGaN 층에 전도성 필라멘트를 형성하여 전기전도도를 부여하는 연구를 진행하였다. p-GaN 과 p-AlGaN 위에서 5 nm 두께의 SiO2는 schottky 한 특성과 280 nm의 파장대역에서 약 97%의 투과율을 보였다. 비록 schottky 장벽이 형성되었지만, 전기전도도가 크게 향상되었으며 심자외선 영역에서 매우 낮은 흡수율을 보였다. 이는 기존의 증착후 열처리를 거쳐 제조된 전극에 비하여 우수한 특성을 지니며 향후 심자외선 영역 발광다이오드의 p-(Al)GaN 층 위에 오믹접촉을 이룰수 있는 가능성을 제시한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.