• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.160-160
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• 2017

Commercially pure titanium (Cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Plasma electrolyte oxidation (PEO) enables control in the chemical composition, porous structure, and thickness of the TiO2 layer on Ti surface. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study on electrochemical behaviors of PEO-treated Ti-6Al-4V Alloy in solution containing Zn and Si ions. The morphology, the chemical composition, and the microstructure analysis of the sample were examined using FE-SEM, EDS, and XRD. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat. The promising results successfully demonstrated the immense potential of Si/Zn-TiO2 coatings in dental and biomaterials applications.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.254-259
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• 2005

In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential 3$\omega$ method. Also, verification of differential 3$\omega$ method has been accomplished with various proposed criteria. The target film for measurement is 300 nm silicon dioxide and this thin film is covered with various thicknesses of upper protective layer. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. However, the verification of differential 3$\omega$ method has not been conducted. Thus we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential 3$\omega$ method is verified to be reliable as long as the proposed preconditions are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between upper protective layer thickness and width of the heater line due to heat spreading effect.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.516-521
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• 2018

Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.533-538
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• 2013

Silicon carbide (SiC) materials are typical ceramic materials with a wide range of uses due to their high hardness and strength and oxidation resistance. In particular, due to the corrosion resistance of the material against acids and bases including the chemical resistance against ionic gases such as plasma, the application of SiC has been expanded to extreme environments. In the SiC deposition process, where chemical vapor deposition (CVD) technology is used, the reactions between the raw gases containing Si and C sources occur from gas phase to solid phases; thus, the merit of the CVD technology is that it can provide high purity SiC in relatively low temperatures in comparison with other fabrication methods. However, the product yield rarely reaches 50% due to the difficulty in performing uniform and dense deposition. In this study, using a computational fluid dynamics (CFD) simulation, the gas velocity inside the reactor and the concentration change in the gas phase during the SiC CVD manufacturing process are calculated with respect to the gas velocity and rotational speed of the stage where the deposition articles are located.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1156-1166
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• 2004

Antimony profiles by MeV implantation are measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR). The moments of SIMS and simulated profiles are calculated and compared for the exact range in MeV energy. SRIM, DUPEX, ICECREM, and TSUPREM4 simulation programs are used for the calculation of range 1D, 2D. SRIM is a Monte Carlo simulation program and different inter-atomic potentials can be used for the calculation of nuclear stopping power cross-section (Sn) and range moments. Nevertheless, the range parameters were not influenced from nuclear stopping power in MeV. Through the modification of electronic stopping power cross-section (Se), the results of simulation are remarkably improved and matched very well with SIMS data. The values of electronic stopping power are optimized for Sb high energy implantation. For the electrical activation, Sb implanted samples are annealed under $N_2$ and $O_2$ ambient. Finally, Oxidation retard diffusion(ORD) effect of Sb implanted sample are demonstrated by SR measurements and ICECREM simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.471-474
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• 2000

A flat type microgas sensor was fabricated on the p-type silicon wafer with low stress S $i_3$ $N_4$, whose thickness is 2${\mu}{\textrm}{m}$ using MEMS technology and its characteristics were investigated. W $O_3$thin film as a sensing material for detection of N $O_2$gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$~$600^{\circ}C$) for one hour. N $O_2$gas sensitivities were investigated for the W $O_3$thin films with different annealing temperatures. The highest sensitivity when operating at 20$0^{\circ}C$ was obtained for the samples annealed at $600^{\circ}C$. As the results of XRD analysis, the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibit higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}$ $R_{air}$ operating at 20$0^{\circ}C$ to 5 ppm N $O_2$of the sample annealed at $600^{\circ}C$ were approximately 90. 90.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.169-172
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• 2004

The effect of the process parameters on the stable lifetime in rapid thermal firing(RTF) was investigated in order to optimize the process for the Cz-silicon. The process temperature was varied between $700^{\circ}C\;and\;950^{\circ}C$ while the process time was chosen 1 s and 10 s. At below $850^{\circ}C$ the stable lifetime for 10 s is higher than that for 1 s and increases with increasing by the process temperature. However, at over $850^{\circ}C$ the improved stable lifetime is not dependent on the process time and temperature. On the other hand, two high temperature processes in solar cell fabrics are combined with the optimized process and the non-optimized process. The last process determines the stable lifetime. Also, the degraded stable lifetime could be increased by processing in optimized process. The decreased lifetime can increase using the optimized oxidation process, which is a final process in solar cells. Finally, the optimized and non-optimized processes are applied solar cells.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.27-30
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• 2012

This paper proposes a micro gas sensor for measuring $H_2S$ gas. This is based on a $SnO_2$-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The $SnO_2$-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace. To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers. The sensitivities are measured by applying $H_2S$ gas. It has a concentration of 1 ppm at an operating temperature of $270^{\circ}C$. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of $H_2S$ gas is approximately 68%. This is approximately 12% more than that of a sensor with one-layer.