• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.361-366
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• 2004

The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91％, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.765-770
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• 2003

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• 약학회지
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• 제39권2호
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• pp.185-192
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• 1995

Flurbiprofen, one of potent nonsteroidal antiinflammatory drugs, has several systemic side effects due to dose dumping effect following oral administration of its conventional solid dosage forms. To reduce these side effects and to sustain therapeutic concentration of the drug, matrix tablets of flurbiprofen were prepared and evaluated for sustained release from the tablets. The matrix tablets of flurbiprofen were prepared with Eudragit, Pluronic, (anhydrous) lactose and colloidal silicon dioxide employing two different preparation methods, wet granulation and direct compression. The dissolution rates of the tablets were evaluated using KP 2 method. Formulation factors that affected dissolution rates of flurbiprofen were the type and content of Eudragit, the type and content of Pluronic, and the tablet preparation method. Several formulations of the matrix tablets showed dissolution patterns close to the simulated profile using pharmacokinetic parameters of flurbiprofen.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.150-151
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• 2006

Laser pyrolysis is a very suitable method for the synthesis of a wide range of nanoparticles. A pilot unit based on this process has been recently developed at CEA. This paper reports results showing the possibility to produce SiC and $TiO_2$ nanoparticles at rates of respectively 1 and 0.2 kg/h and also the possibility to adjust the mean grain size of the particles and their structure by changing the laser intensity and reactants flow rates. First tests of liquid recovery have been also successfully performed to limit the risks of nanoparticles dissemination in the environement during their recovery.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.168-169
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• 2005

실온에서 디스플레이 응용을 위하여 ICP CVD로 PET기판 위에 실리콘 산화 반사 방지막을 성장시키고, EDXA로 분석하였다. 분광 Ellipsometer, UV-V와 FTIR분광기를 이용하여 반사율을 3%이하까지 낮출 수 있다는 것을 확인하였고, SEM장비를 이용하여 표면 상태를 알아보았으며. Essential Macleod 광학디자인 프로그램을 이용한 시뮬레이션 결과와 일치함을 확인하였다. 본 연구결과를 이용하면 다층박막 대신 단층 반사방지막을 제작하여 경제적이고, 효과적인 반사방지막을 제작할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.53-53
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• 2000

반도체 산업에서 유기물질의 응용에 많은 관심을 나타내고있으며, 그 응용의 예로는 발광 다이오드(light emitting diode)와 박막트랜지스터(thinfilm transistor)가 주를 이루고 있다. 이러한 유기 물질을 이용하면 소자의 제작 공정의 단순화와 제작 가격을 낮출 수 있는 이점을 기대할 수 있다. 본 연구에서는 유리 기판 위에 pentcence 다이오드를 제작하였다. 유리 기판 위에 silicon dioxide를 PECVD으로 성막하였다. 전극으로는 Ohmic contact를 이루기 위해 금(Au)을 사용하였으며 schottky contact을 이루기 위해서 알루미늄(Al), 인듐(In), 크롬(Cr), 은(Ag), 금(Au)을 각각 사용하였다. 소자의 활성 층으로는 pentcene을 가장 단순한 열 증착법으로 성막하였고, 진공도는 10-8Torr를 유지하였으며 성막 속도는 0.3 $\AA$/sec로 성막하였다. 제작된 소자들은 $\alpha$-step, I-V, C-V, AFM, IR등을 이용하여 측정, 분석하였다.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.42-47
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• 2018

This work reports a facile and effective antibacterial coating for oxide substrates. As a coating material, a random copolymer, abbreviated as poly(TMSMA-r-PEGMA), was synthesized by radical polymerization of 3-(trimethoxysilyl)propyl methacrylate (TMSMA) and poly(ethylene glycol) methyl ether methacrylate (PEGMA). Polymeric self-assembled monolayers of poly(TMSMA-r-PEGMA) were formed on various inorganic oxide substrates, including silicon oxide, titanium dioxide, aluminum oxide, and glass, via the simple dip-coating process. The polymer-coated substrates were characterized by ellipsometry, contact angle measurements, and X-ray photoelectron spectroscopy. The bacterial adhesion on the polymer-coated substrates was completely suppressed compared to that on the uncoated substrates.

• 보존과학회지
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• 제38권4호
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• pp.327-333
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• 2022

Sri Lanka has four types of mural painting styles; Classic, Late Classic, Kandyan, and Southern styles, but there is little research on scientific analysis for mural paintings. In this study, we analyze white, yellow, and red clay pigments which were collected from ancient producing sites. Analyzing pigment samples shows that samples are containing aluminum oxide(Al₂O₃) and silicon dioxide(SiO₂) which are connected to the soil. And a degree of iron oxidation determines yellow or red colors. To understand the characteristics of clay pigment samples, we go over previous pigment analyses of mural paintings in Sri Lanka. Kaolin is identified after the 17^th century, yellow and red ochre are applied in early periods, Classic and Late Classic styles. The change in raw materials of pigments occurred in the 17^th century.