• Title/Summary/Keyword: silicon die

검색결과 89건 처리시간 0.028초

주조용 B390 알루미늄합금의 조직과 기계적 성질에 대한 각종 주조법의 영향 (Effect of Casting Processes on the Microstructures and Mechanical Properties of B390 Aluminium Alloy)

  • 한요섭;이호인;김성수;김정식
    • 한국주조공학회지
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    • 제13권3호
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    • pp.259-267
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    • 1993
  • The effects of casting processes-direct and indirect squeeze casting, permanent mold casting and die casting on the microstructure and mechanical properties were studied for the hypereutectic B390 aluminium alloy. The effects of T5 and T6 heat treatment were also examined. The direct and indirect squeeze casting showed no casting defects such as porosity and shrinkage were observed in permanent mold castings and die castings. The primary silicon phase was refined and homogeneously distributed in the order of indirect squeeze casting, diecasting, direct squeeze casting and permanent mold casting. Depletion of primary silicon phase in die casting surface was disappeared in indirect squeeze casting. Tensile strength of cast and heat treated specimens were increased in the order of direct squeeze casting, permanent mold casting, indirect squeeze casting and die casting. Hardness of indirect squeeze castings was larger than that of other castings. As indirect squeeze casting of B390 aluminium alloy, the time of T6 heat treatment to achieve high strength can be reduced.

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굽힘응력을 받는 유연전자소자에서 중립축 위치의 제어 (Control of Position of Neutral Line in Flexible Microelectronic System Under Bending Stress)

  • 서승호;이재학;송준엽;이원준
    • 마이크로전자및패키징학회지
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    • 제23권2호
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    • pp.79-84
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    • 2016
  • 유연전자소자가 외부힘에 의해 변형될 경우 반도체 다이가 기계적 응력 때문에 변형되거나 파괴되고 이러한 변형이나 파괴는 channel의 전자이동도를 변화시키거나 배선의 저항을 증가시켜 집적회로의 동작 오류를 발생시킨다. 따라서 반도체 집적회로는 굽힘 변형이 발생해도 기계적 응력이 발생하지 않는 중립축에 위치하는 것이 바람직하다. 본 연구에서는 굽힘변형을 하는 flip-chip 접합공정이 적용된 face-down flexible packaging system에서 중립축의 위치와 파괴 모드를 조사하였고 반도체 집적회로와 집중응력이 발생한 곳의 응력을 감소시킬 수 있는 방법을 제시하였다. 이를 위해, 설계인자로 유연기판의 두께 및 소재, 반도체 다이의 두께를 고려하였고 설계인자가 중립축의 위치에 미치는 영향을 조사한 결과 유연기판의 두께가 중립축의 위치를 조절하는데 유용한 설계인자임을 알 수 있었다. 3차원 모델을 이용한 유한요소해석 결과 반도체 다이와 유연기판 사이의 Cu bump 접합부에서 항복응력보다 높은 응력이 인가될 수 있음을 확인하였다. 마지막으로 flexible face-down packaging system에서 반도체 다이와 Cu bump 의 응력을 감소시킬 수 있는 설계 방법을 제안하였다.

A Die-Selection Method Using Search-Space Conditions for Yield Enhancement in 3D Memory

  • Lee, Joo-Hwan;Park, Ki-Hyun;Kang, Sung-Ho
    • ETRI Journal
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    • 제33권6호
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    • pp.904-913
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    • 2011
  • Three-dimensional (3D) memories using through-silicon vias (TSVs) as vertical buses across memory layers will likely be the first commercial application of 3D integrated circuit technology. The memory dies to stack together in a 3D memory are selected by a die-selection method. The conventional die-selection methods do not result in a high-enough yields of 3D memories because 3D memories are typically composed of known-good-dies (KGDs), which are repaired using self-contained redundancies. In 3D memory, redundancy sharing between neighboring vertical memory dies using TSVs is an effective strategy for yield enhancement. With the redundancy sharing strategy, a known-bad-die (KBD) possibly becomes a KGD after bonding. In this paper, we propose a novel die-selection method using KBDs as well as KGDs for yield enhancement in 3D memory. The proposed die-selection method uses three search-space conditions, which can reduce the search space for selecting memory dies to manufacture 3D memories. Simulation results show that the proposed die-selection method can significantly improve the yield of 3D memories in various fault distributions.

플라스틱 IC 패키지 접합부의 수명예측 및 품질향상에 관한 연구 (A Study on the Life Prediction and Quality Improvement of Joint in IC Package)

  • 신영의;김종민
    • Journal of Welding and Joining
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    • 제17권1호
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    • pp.124-132
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    • 1999
  • Thermal fatigue strength of the solder joints is the most critical issue for TSOP(Thin Small Outline Package) because the leads of this package are extremely short and thermal deformation cannot be absorbed by the deflection of the lead. And the TSOP body can be subject to early fatigue failures in thermal cycle environments. This paper was discussed distribution of thermal stresses at near the joint between silicon chip and die pad and investigated their reliability of solder joints of TSOP with 42 alloy clad lead frame on printed circuit board through FEM and 3 different thermal cycling tests. It has been found that the stress concentration around the encapsulated edge structure for internal crack between the silicon chip and Cu alloy die pad. And using 42 alloy clad, The reliability of TSOP body was improved. In case of using 42 alloy clad die pad(t=0.03mm). $$\sigma$_{VMmax}$ is 69Mpa. It is showed that 15% improvement of the strength in the TSOP body in comparison with using Cu alloy die pad $($\sigma$_{VMmax}$=81MPa). In solder joint of TSOP, the maximum equivalent plastic strain and Von Mises stress concentrate on the heel of solder fillet and crack was initiated in it's region and propagated through the interface between lead and solder. Finally, the modified Manson-Coffin equation and relationship of the ratio of $N_{f}$ to nest(η) and cumulative fracture probability(f) with respect to the deviations of the 50% fracture probability life $(N_{f 50%})$ were achieved.

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Clock Mesh Network Design with Through-Silicon Vias in 3D Integrated Circuits

  • Cho, Kyungin;Jang, Cheoljon;Chong, Jong-Wha
    • ETRI Journal
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    • 제36권6호
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    • pp.931-941
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    • 2014
  • Many methodologies for clock mesh networks have been introduced for two-dimensional integrated circuit clock distribution networks, such as methods to reduce the total wirelength for power consumption and to reduce the clock skew variation through consideration of buffer placement and sizing. In this paper, we present a methodology for clock mesh to reduce both the clock skew and the total wirelength in three-dimensional integrated circuits. To reduce the total wirelength, we construct a smaller mesh size on a die where the clock source is not directly connected. We also insert through-silicon vias (TSVs) to distribute the clock signal using an effective clock TSV insertion algorithm, which can reduce the total wirelength on each die. The results of our proposed methods show that the total wirelength was reduced by 12.2%, the clock skew by 16.11%, and the clock skew variation by 11.74%, on average. These advantages are possible through increasing the buffer area by 2.49% on the benchmark circuits.

레이저를 이용한 웨이퍼 다이싱 특성 분석

  • 이용현;최경진;유승렬;양영진;배성창
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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    • pp.251-254
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    • 2006
  • In this paper, cutting qualifies and fracture strength of silicon dies by laser dicing are investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bending test and is compared with the die strength by mechanical sawing. As a results, die strength by the laser dicing shows a decrease of 50% in compared with die strength by the mechanical sawing.

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Thermal-Aware Floorplanning with Min-cut Die Partition for 3D ICs

  • Jang, Cheoljon;Chong, Jong-Wha
    • ETRI Journal
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    • 제36권4호
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    • pp.635-642
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    • 2014
  • Three-dimensional integrated circuits (3D ICs) implement heterogeneous systems in the same platform by stacking several planar chips vertically with through-silicon via (TSV) technology. 3D ICs have some advantages, including shorter interconnect lengths, higher integration density, and improved performance. Thermal-aware design would enhance the reliability and performance of the interconnects and devices. In this paper, we propose thermal-aware floorplanning with min-cut die partitioning for 3D ICs. The proposed min-cut die partition methodology minimizes the number of connections between partitions based on the min-cut theorem and minimizes the number of TSVs by considering a complementary set from the set of connections between two partitions when assigning the partitions to dies. Also, thermal-aware floorplanning methodology ensures a more even power distribution in the dies and reduces the peak temperature of the chip. The simulation results show that the proposed methodologies reduced the number of TSVs and the peak temperature effectively while also reducing the run-time.

세라믹 인서트를 이용한 단조 금형설계 (Forging Die Design using Ceramic Insert)

  • 권혁홍
    • 한국생산제조학회지
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    • 제9권3호
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    • pp.9-17
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    • 2000
  • The use of ceramic inserts in steel forging tools offers significant technical and economic advantages over other materi-als of manufacture. These potential benefits can however only be realised by optimal design of the tools so that the ceramic insert are not subjected to stresses that led to their premature failure. In this paper the data on loading of the tools is determined from a commercial forging simulation package as the contact stress distribution on the die-workpiece interface and as temperature distributions in the die. This data can be processed as load input data for a finite-element die-stress analysis. Process simulation and stress analysis are thus combined during the design and a data exchange program has been developed that enables optimal design of the dies taking into account the elastic detections generated in shrink fitting the die inserts and that caused by the stresses generated in the forging process. The stress analysis of the dies is used to determine the stress conditions on the ceramic insert by considering contact and interference effects under both mechanical and thermal loads. Simulation results have been validated as a result of experimental investigation. Laboratory tests on ceramic insert dies have verified the superior performance of the Zirconia and Silicon Nitride ceramic insert in order to prolong maintenance life.

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Fluxless eutectic die bonding을 적용한 high power LED 패키지의 열저항 특성 (The Characteristics of Thermal Resistance for Fluxless Eutectic Die Bonding in High Power LED Package)

  • 신상현;최상현;김현호;이영기;최석문
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.303-304
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    • 2005
  • In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

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TSV 기반 3D IC Pre/Post Bond 테스트를 위한 IEEE 1500 래퍼 설계기술 (IEEE 1500 Wrapper Design Technique for Pre/Post Bond Testing of TSV based 3D IC)

  • 오정섭;정지훈;박성주
    • 전자공학회논문지
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    • 제50권1호
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    • pp.131-136
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    • 2013
  • 칩 적층기술의 발달로 TSV(Through Silicon Via) 기반 3D IC가 개발되었다. 3D IC의 높은 신뢰성과 수율을 얻기 위해서는 pre-bond 와 post-bond 수준에서 다양한 TSV 테스트가 필수적이다. 본 논문에서는 pre-bond 다이의 TSV 연결부에서 발생하는 미세한 고장과 post-bond 적층된 3D IC의 TSV 연결선에서 발생하는 다양한 고장을 테스트할 수 있는 설계기술을 소개한다. IEEE 1500 표준 기반의 래퍼셀을 보완하여 TSV 기반 3D IC pre-bond 및 post-bond의 at speed test를 통하여 known-good-die와 무결점의 3D IC를 제작하고자 한다.