• Journal of Energy Engineering
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• v.22 no.1
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• pp.58-81
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• 2013

Recently, the technological progress in manufacturing power devices based on wide bandgap materials, for example, silicon carbide(SiC) or gallium nitride(GaN), has resulted in a significant improvement of the operating-voltage range and switching speed and/or specific on resistance compared with silicon power devices. This paper will give an overview of the status on The Next generation Power Devices such as SiC/GaN with a focus on commercialization and research.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.284-289
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• 2015

This study examined carbon layer coating on silicon carbide (SiC) fibers by utilizing solid-state and wet chemistry routes to confer toughness to the fiber-reinforced ceramic matrix composites, as an alternative to the conventional pyrolytic carbon (PyC) interphase layer. Electrophoretic deposition (EPD) of carbon black nanoparticles using both AC and DC current sources, and the vacuum infiltration of phenolic resin followed by pyrolysis were tested. Because of the use of a liquid phase, the vacuum infiltration resulted in more uniform and denser carbon coating than the EPD routes with solid carbon black particles. Thereafter, vacuum infiltration with controlled variation in phenolic resin concentration, as well as the iterations of infiltration steps, was improvised to produce a homogeneous carbon coating having a thickness of several hundred nanometers on the SiC fiber. Conclusively, it was demonstrated that the carbon coating on the SiC fiber could be achieved using a simpler method than the conventional chemical vapor deposition technique.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.212-217
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• 2022

Large thermal stress due to the difference between silicon carbide and graphite's coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• Journal of Ceramic Processing Research
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• v.21 no.1
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• pp.113-118
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• 2020

The fabrication of continuous carbon fiber-reinforced carbon-silicon carbide matrix (Cf/C-SiC) cross-ply composites is highly attractive from a practical viewpoint due to their homogeneous microstructures and isotropic mechanical properties. However, the properties of Cf/C-SiC composites depend significantly on their processing conditions and temperatures, especially the pyrolysis conditions and temperatures. In this study, cross-ply Cf/C-SiC composites were fabricated using different pyrolysis protocols with phenolic resin via a liquid silicon infiltration. The effects of the pyrolysis conditions on the microstructures of the composites and their mechanical properties as well as on crack formations were evaluated at room temperature. Pyrolysis was performed at 600 ℃ for 1 h in a nitrogen atmosphere at different heating rates. The flexural strength varied from a minimum of 47 ± 3 MPa to a maximum of 62 ± 6 MPa (~ 35% increase) depending on the pyrolysis conditions.

• Journal of the Korean Society of Marine Environment & Safety
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• v.25 no.7
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• pp.974-981
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• 2019

Fine dust has become a significant social problem. Diesel engines are used as the main propulsion power source in ships. This study introduces a diesel particulate filter (DPF) that is used as an exhaust after-treatment system for diesel engines to reduce particulate matter known as diesel fine dust. Two materials are used for the DPF: Cordierite and silicon carbide (SiC). In this study, to improve the physical properties of the binder used in the SiC DPF, cordialite was used instead of the SiC-based materials used as the conventional binder to evaluate the thermal durability against high-temperature deformation through the change of the coefficient of thermal expansion. In addition, the physical properties of the silica sol, as a main component of the base coating solution for determining the bond between the binder and the segment, were confirmed. Based on this, the change effect of the binder physical properties was confirmed through experiments by either adding a silane coupling agent or SiC to increase the reactivity of the silica sol.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.266-270
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• 2014

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

• Journal of Powder Materials
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• v.28 no.1
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• pp.51-58
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• 2021

The conversion of carbon preforms to dense SiC by liquid infiltration is a prospectively low-cost and reliable method of forming SiC-Si composites with complex shapes and high densities. Si powder was coated on top of a 2.0wt.% Y2O3-added carbon preform, and reaction bonded silicon carbide (RBSC) was prepared by infiltrating molten Si at 1,450℃ for 1-8 h. Reactive sintering of the Y2O3-free carbon preform caused Si to be pushed to one side, thereby forming cracking defects. However, when prepared from the Y2O3-added carbon preform, a SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C → SiC reaction at 1,450℃, 3C and 6H SiC phases, crystalline Si, and Y2O3 were generated based on XRD analysis, without the appearance of graphite. The RBSC prepared from the Y2O3-added carbon preform was densified by increasing the density and decreasing the porosity as the holding time increased at 1,450℃. Dense RBSC, which was reaction sintered at 1,450℃ for 4 h from the 2.0wt.% Y2O3-added carbon preform, had an apparent porosity of 0.11% and a relative density of 96.8%.

• Transactions of the Korean Society of Automotive Engineers
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• v.4 no.4
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• pp.130-139
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• 1996

The silicon carbide particles reinforced aluminium 6061($SiCp/A\ell$) composites are generally known have wild range of applications from automobiles to airospaces. But, by the results of existing study for $SiCp/A\ell$ composites, there are reports that the fatigue life of $SiCp/A\ell$ composites has improved than $A\ell$matrixes and has not improved then $A\ell$ matrixes. Consequently, in order to perform the reliable life prediction for $SiCp/A\ell$, the properties of probability distribution of fatigue crack initiation life & fracture life, crack growth length in constant number of cycles, crack growth rate in constant stress intensity factor range and m & C value in Paris's fatigue crack growth law and the estimation of statistical parameters have been evaluated by the statistics method.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1194-1202
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• 1995

The influences of TiC additions to the α-SiC on microstructural, mechanical, and electrical properties were investigated. Electrical discharge machinability of SiC-TiC composites was also studied. Samples were prepared by adding 30, 45, 60 wt.% TiC particles as a second phase to a SiC matrix. Sintering of SiC-TiC composites was done by hot pressing under a vacuum atmospehre from 1000 to 2000℃ with a pressure of 32 MPa and held for 90 minutes at 2000℃. Samples obtained by hot pressing were fully dense with the relative densities over 99% except 60wt.% TiC samples. Flexural strength and fracture toughness of the samples were increased with the TiC content. In case of SiC samples containing 45 wt.% TiC, the fracture toughness showed 90% increase compared to that of monolithic SiC sample. The crack propagation and crack deflection were observed with a SEM for etched samples after Vicker's indentation. The electrical resistivities of SiC-TiC composites were measured utilizing the four-point probe. The electrical dischage machining of composites was also conducted to evaluate the machinability.