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http://dx.doi.org/10.6111/JKCGCT.2022.32.5.212

Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals  

Kang, June-Hyuk (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Kim, Yong-Hyeon (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Shin, Yun-Ji (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Bae, Si-Young (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Jang, Yeon-Suk (Department of Advanced Materials Engineering, Dong-Eui University)
Lee, Won-Jae (Department of Advanced Materials Engineering, Dong-Eui University)
Jeong, Seong-Min (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Abstract
Large thermal stress due to the difference between silicon carbide and graphite's coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.
Keywords
Silicon carbide; Graphite; Single crystal growth; Interface delamination; Bonding agent;
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