• Nuclear Engineering and Technology
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• v.48 no.4
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• pp.1009-1014
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• 2016

SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ~0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ~100 MPa. The joint interface consisted of $TiSi_2$, $Ti_3SiC_2$, and SiC phases formed by a diffusion reaction of Ti and Si.

• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.75-80
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• 2014

Nanocrystalline diamond(NCD) films on steel(SKH51) has been investigated using SiC interlayer film. SiC was deposited on SKH51 or Si wafer by RF magnetron sputter. NCD was deposited on SiC at $600^{\circ}C$ for 0.5~4 h employing microwave plasma CVD. Film morphology was observed by FESEM and FIB. Film adherence was examined by Rockwell C adhesion test. The growth rate of NCD on SiC/Si substrate was much higher than that on SiC/SKH51. During particle coalescence, NCD growth rate was slow since overall rate was determined by the diffusion of carbon on SiC surface. After completion of particle coalescence, NCD growth became faster with the reaction of carbon on NCD film controlling the whole process. In the case of SiC/SKH51 substrate, a complete NCD film was not formed even after 4 h of deposition. The adhesion test of NCD/SiC/SKH51 samples revealed a delamination of film whereas that of SiC/SKH51 showed a good adhesion. Many voids of less than 0.1 ${\mu}m$ were detected on NCD/SiC interface. These voids were believed as the reason for the poor adhesion between NCD and SiC films. The origin of voids was due to the insufficient coalescence of diamond particles on SiC surface in the early stage of deposition.

• Journal of the korean academy of Pediatric Dentistry
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• v.23 no.2
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• pp.357-364
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• 1996

The purpose of this study was to asses the shear bond strengths of 3 types of light-curing Glass Ionomer cement to dental amalgam with or without an intermediary agent. 60 amalgam adherent specimens were prepared and aged in water at $37^{\circ}C$ for 3 days. Before bonding, the amalgam surfaces were finished flat on 600-grit silicon carbide paper. 30 specimens among 60 were used for bonding in this condition, and the other 30 were covered with a thin layer of light-curing intermediary agent. Shear bond strengths were measured with universal testing machine (Instron, Model 4301) and statistically processed by ANOVA and t-test. On completion of bond test, the fracture surfaces were examined under light microscope so that the mode of bond failure could be assessed The results were as follows : 1. Bond strength of Fuji II LC group showed the hightest value and was followed by Vitremer, Vitrebond groups (p<0.05). 2. The bond strengths achieved without an intermediary agent were higher than those obtained with intermediary agent (p<0.05). 3. For the specimens bonded with intermediary agent, bond failures occured mostly at the agent-amalgam interface. So, the use of intermediary bonding agent was thought not recommendable at glass ionomer-amalgam interface.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• Journal of IKEEE
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• v.24 no.1
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• pp.170-177
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• 2020

This paper presents an open-fault tolerance control method for active neutral point clamped (ANPC) inverter with high frequency/low frequency (HF/LF) modulation. By applying the ANPC inverter with SiC MOSFETs and Si IGBTs, the system efficiency and performance can be improved compared to a Si-based inverter. HF/LF modulation is used for a megawatt-scale inverter to minimize the commutation loop. The open-switch failure in megawatt-scale inverter causes severe damage to load and huge expenses when the inverter has been shut-down. The proposed tolerance control of open-switch failure provides continuous operation and improved reliability to the ANPC inverter. The effectiveness of the proposed fault tolerance control is verified by simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• Journal of Digital Contents Society
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• v.14 no.1
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• pp.35-40
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• 2013

The use of slurry with a mix of abrasives and coolant for making Wire Saw in the photovoltaic industry has sharply increased with the semiconductor wafer. In this paper, the slurry was isolated, purified and dried by microwave drying method with high-purity silicon carbide powder obtained through chemical processing. Dried slurry bulk was first pulverized and chemical treatment was applied to produce powder. The produced slurry powder was then analyzed by going through the following analysis; thermal analysis, particle size analyses: SEM shots, elemental analysis, XRF and XRD. The results of this study found the recovery rate of the power obtained though the chemical processing to be higher than the one obtained from mineral processing. The results anticipate infrastructure building and active responses to increasingly stronger domestic and international environmental regulations through the integration and recycling of large amounts of slurry in the photovoltaic industry.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.11
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• pp.1091-1097
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• 2015

Graphite material has been widely used for making the rocket nozzle throat because of its excellent thermal properties. However, when compared with typical structural materials, graphite is relatively weak with respect to both strength and toughness, owing to its quasi-brittle behavior, and gets oxidized at $450^{\circ}C$. Therefore, it is important to evaluate the thermal and mechanical properties of this material for using it in structural applications. This study presents an experimental method to investigate the fracture behavior of ATJ graphite at elevated temperatures. In particular, the effects of major parameters such as temperature, loading, and oxidation conditions on strength and fracture characteristics were investigated. Uniaxial compression and tension tests were conducted in accordance with the ASTM standard at room temperature, $500^{\circ}C$, and $1,000^{\circ}C$. Fractography analysis of the fractured specimens was carried out using an SEM.

• The Journal of Advanced Prosthodontics
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• v.5 no.2
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• pp.98-103
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• 2013

PURPOSE. To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS. Fifty-five ceramic blocks ($5mm{\times}5mm{\times}2mm$) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at $37^{\circ}C$ for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (${\alpha}$=0.05). RESULTS. Adhesion was significantly stronger in Group 2 ($3.88{\pm}1.94$ MPa) and Group 3 ($3.65{\pm}1.87$ MPa) than in Control group ($1.95{\pm}1.06$ MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 ($3.59{\pm}1.19$ MPa) and Control group. Shear bond strength was highest in Group 1 ($8.42{\pm}1.86$ MPa; P<.01). CONCLUSION. Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique.