• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.697-705
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• 2014

A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.36-42
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• 1999

Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid(VS), two-stage growth(TS), and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction(XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e., the small diameter whiskers (<1 $\mu\textrm{m}$) grown by the VS, TS, and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers(>2$\mu\textrm{m}$) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers was probably due to the high specific lateral surface area of small diameter whiskers.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.492-497
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• 2006

SiC coating has been introduced as protective layer in TRISO nuclear fuel particle of High Temperature Gas cooled Reactor (HTGR) due to excellent mechanical stability at high temperature. In order to inhibit the failure of the TRISO particles, it is important to evaluate the fracture strength of the SiC coating layer. ]n present work, thin silicon carbide coating was fabricated using chemical vapor deposition process with different microstructures and thicknesses. Processing condition and surface status of substrate.affect on the microstructure of SiC coating layer. Sphere indentation method on trilayer configuration was conducted to measure the fracture strength of the SiC film. The fracture strength of SiC film with different microstructure and thickness were characterized by trilayer strength measurement method nanoindentation technique was also used to characterize the elastic modulus and th ε hardness of the SiC film. Relationships between microstructure and mechanical properties of CVD SiC thin film were discussed.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.707-711
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• 2016

A small diameter of SiC fiber mat can produce much higher heat under microwave irradiation than the other types of SiC materials. Fabrication of high strength SiC fiber consists of iodine vapor curing on polycarbosilane precursor and heat treatment process. The curing stage of polycarbosilane fiber was maintained at $150-200^{\circ}C$ in a vacuum condition under the iodine vapor to fabricate a high thermal radiation SiC fiber. The structure and morphology of the fibers were characterized by Fourier transform infrared (FTIR) spectroscopy, thermogravimetric analysis (TG) and scanning electron microscopy (SEM). In this study, the thermal properties of SiC fiber mats under microwave have been analyzed with an IR thermal camera and its image analyzer. The prepared SiC fiber mats radiated high temperature with extremely high heating rate up to $1100^{\circ}C$ in 30 seconds. The fabricated SiC fiber mats were not oxidized after the heat radiation process under the microwave irradiation.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.320-326
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• 2000

Development of texture in SiC materials by hot-pressing and subsequent annealing was studied. Crystallographic texture type was characterized by measuring X-ray pole figures on the perpendicular plane to the hot-pressing direction. Observed all pole figures were nearly axially symmetric (fiber texture). In case of ${\beta}$-SiC materials, the pole density of basal plane (0004) increased as annealing time increased, in contrast, other planes (hkil) of ${\beta}$-SiC materials and all planes of ${\alpha}$-SiC materials nearly remained unchanged. In the case of ${\beta}$-SiC materials, therefore, a weak texture of (0001) plane at the normal direction took place in the 8h annealed samples, resulting from grian growth. The fracture toughness values of ${\alpha}$-SiC materials measured in both planes parallel and perpendicular to the hot-pressing direction were very similar. However, the fracture toughness of ${\beta}$-SiC materials measured parallel to the hot-pressing direction were higher than that measured perpendicular to the hot-pressing derection, relatively, because of the texture and the microstructure anisotropy.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.625-630
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• 2012

Highly porous silicon carbide (SiC) ceramics were fabricated from polysiloxane, SiC and carbon black fillers, AlN-$Y_2O_3$ additives, and poly (ether-co-octene) (PEOc) and expandable microsphere templates. Powder mixtures with a fixed PEOc content (30 wt%) and varying SiC filler contents from 0-21 wt% were compression-molded. During the pyrolysis process, the polysiloxane was converted to SiOC, the PEOc generated a considerable degree of interconnected porosity, and the expandable microspheres generated fine cells. The polysiloxane-derived SiOC and carbon black reacted and synthesized nano-sized SiC with a carbothermal reduction during a heat-treatment. Subsequent sintering of the compacts in a nitrogen atmosphere produced highly porous SiC ceramics with porosities ranging from 78 % to 82 % and a flexura lstrength of up to ~7 MPa.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• Journal of Power Electronics
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• v.18 no.1
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.409-412
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• 2004

Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10% $N_2O$ nitrided oxidation and PECVD deposition. The reverse characteristics of the SiC SBD with various oxide field plate were investigated.