Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate |
Kim, Hyoung Woo
(Power Semiconductor Research Center at KERI)
Seok, Ogyun (Power Semiconductor Research Center at KERI) Moon, Jeong Hyun (Power Semiconductor Research Center at KERI) Bahng, Wook (Power Semiconductor Research Center at KERI) Jo, Jungyol (Dept. of Electrical and Computer Engineering, Ajou University) |
1 | M. Bhatnagar and B. J. Baliga, "Comparison of 6HSiC, 3C-SiC, and Si for power devices," IEEE Trans. ED, vol. 40, no. 3, pp. 645-655, 1993. DOI |
2 | R. J. Trew, H. B. Yan, and P. M. Mock, "The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications," Proc. IEEE, vol. 79, pp. 598-620, 1991. DOI |
3 | W. S. Lee, K. W. Chu, C. F. Huang, L. S. Lee, M, J. Tsai, K. Y. Lee and F. Zhao, "Design and Fabrication of 4H-SiC Lateral High-Voltage Devices on a Semi- Insulating Substrate," IEEE Trans. ED, vol. 59, no. 3, pp. 754-760, 2012. DOI |
4 | M. Noborio, J. Suda, and T. Kimoto, "4H-SiC lateral double RESURF MOSFETs with low on resistance," IEEE Trans. ED, vol. 54, no. 5, pp. 1216-1223, 2007. DOI |
5 | Y. Zhang, K. Sheng, M. Su, J. Zhao, P. Alexandrov, and L. Fursin, "1000 V 9.1 mcm2 normally off 4H-SiC lateral RESURF JFET for power integrated circuit applications," IEEE EDL, vol. 28, no. 5, pp. 404-407, 2008. |
6 | C. F. Huang, J. R. Kuo, and C. C. Tsai, "High Voltage (3130V) 4H-SiC Lateral p-n Diodes on a Semi insulating Substrate," IEEE EDL, vol. 29, no. 1, pp. 83-85, 2008. DOI |
7 | W. S. Lee, C. W. Lin, M. H. Yang, C. F. Huang, J. Gong and Z. Feng, "Demonstration of 3500-V 4HSiC Lateral MOSFETs," IEEE EDL, vol. 32, no. 3, pp. 360-362, 2011. DOI |
8 | Silvaco TCAD, ATLAS, Silvaco International Co. USA |
9 | W. C. Mitchel and W. D. Mitchell, "Compensation mechanism in high purity semi-insulating 4H-SiC," J. Appl. Phys., 101, 053716, 2007. DOI |
10 | W. C. Mitchel, W. D. Mitchell, G. Landis, H. E. Smith, W. Lee and M. E. Zvanut, "Vanadium donor and acceptor levels in semi-insulating 4H- and 6HSiC," J. Appl. Phys., 101, 013707, 2007. DOI |
11 | T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schoner, and N. Nordell, "Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy," Phys. Stat. Sol. (a), 162, pp. 199-225, 1997. DOI |
12 | J. A. Appels and H. M. J. Vaes, "High voltage thin layer devices (RESURF DEVICES)," IEEE IEDM Tech. Dig., pp. 238-241, 1979. |
13 | T. Kimoto, J. A. Cooper, "Fundamentals of silicon carbide technology," Wiley & Sons, Singapore, 2014, chap. 10 and app. C. |
14 | A. Jain, P. Jumar, S. C. Jain, and V. Kumar, R. Kaur, R. M. Mehra, "Trap filled limit voltage (VTFL) and V2 law in space charge limited currents," J. Appl. Phys., 102, 094505, 2007. DOI |
15 | A. O. Konstantinov, Q. Wahab, N. Nordell and U. Lindefelt, "Ionization rate and critical fields in 4H silicon carbide," Appl. Phys. Lett., vol. 71, no. 1, pp. 90- 92, 1997. DOI |
16 | M. V. S. Chandrashekhar, I. Chowdhury, P. Kaminski, R. Kozlowski, P. B. Klein, and T. Sudarshan, "High Purity Semi-Insulating 4H-SiC Epitaxial Layers by Defect-Competition Epitaxy: Controlling Si Vacancies," Appl. Phys. Express, vol. 5, 025502, 2012. DOI |