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http://dx.doi.org/10.5370/JEET.2018.13.1.387

Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate  

Kim, Hyoung Woo (Power Semiconductor Research Center at KERI)
Seok, Ogyun (Power Semiconductor Research Center at KERI)
Moon, Jeong Hyun (Power Semiconductor Research Center at KERI)
Bahng, Wook (Power Semiconductor Research Center at KERI)
Jo, Jungyol (Dept. of Electrical and Computer Engineering, Ajou University)
Publication Information
Journal of Electrical Engineering and Technology / v.13, no.1, 2018 , pp. 387-392 More about this Journal
Abstract
Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.
Keywords
Silicon carbide; Semi-insulating; Lateral power device; High purity semi-insulating; Vnadium doped semi-insulating;
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