• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.39-43
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• 2017

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from $6.83{\times}10^{18}cm^{-3}$ to $1.27{\times}10^{19}cm^{-3}$ and from 62 to $89cm^2/V{\cdot}s$, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.101-104
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• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• 전자공학회논문지D
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• 제34D권1호
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• pp.35-40
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• 1997

A new method to form the gate oxide and recrystllize the polycrystalline silicon (poly-Si) active layer simultaneously is proposed and fabricated successfully. During te irradiation of excimer laser, the poly-Si film is recrystallized, while the oxygen ion impurities injected into the amorphous silicon(a-Si) film are activated by laser energy and react with silicon atoms to form SiO2. We investigated the characteristics of the sample fabricated by proposed method using AES, TEM, AFM. The electrical performance of oxide was verified by ramp up voltage method. Our experimental results show that a high quality oxide, a pol-Si film with fine grain, and a smooth and clean interface between oxide and poly-Si film have been successfully obtained by the proposed fabrication method. The interface roughness of oxide/poly-Si fabricated by new method is superior to film by conventional fabrication os that the proposed method may improve the performance of poly-Si TFTs.

• 열처리공학회지
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• 제15권6호
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• pp.260-268
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• 2002

The effects of calcium and silicon on microstructure and aging characteristics of AZ91 magnesium alloy during T5 treatment was investigated. The addition of 0.88% calcium or 0.25% silicon to AZ91 alloy made dendrite cell smaller. Especially, silicon is more effectively acted as refinement of the dendrite cell than calcium. It is due to that $Mg_2Si$ precipitated at the dendrite cell boundary or in the matrix during T5 treatment of Si added AZ91 alloy retarded the growth of the secondary phase. In the mean while, without inducing the precipitates containing calcium, calcium was segregated mainly around secondary phase such as $Mg_{17}Al_{12}$ and partially dissolved in ternary eutectic (Mg-Al-Ca) structure. In the AZ91 alloy containing both silicon and calcium, more finely distributed $Mg_2Si$ in matrix homogeneously and much finer microstructure were obtained than those containing silicon or calcium. Hence, An AZ91 containing both silicon and calcium was more effective to retarding the growth of the secondary phase than the other AZ91 alloy such as AZ91 alloy containing silicon or AZ91 alloy containing calcium.

• 통합자연과학논문집
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• 제2권1호
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• pp.28-31
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• 2009

We describe the synthesis and characterization of silicon nanoparticles prepared by the soluton reduction of SiCl4. These reactions produce Si nanoparticles with surfaces that are covalently terminated. The resultant organic derivatized Si nanoparticles as well as a probable distribution of Water-soluble Si nanoparticles are observed and characterized by photoluminescence(PL) spectroscopy. This work focuses originally on the organic- and water-soluble silicon nanoparticles in terms of the photoluminescence. Further this work displays probably the first layout of hydrogen terminated Si nanoparticles synthesized in solution at room temperature.

• 한국재료학회지
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• 제8권4호
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• pp.359-361
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• 1998

$SiH_{4}$를 반응물질로 사용하여 electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD)로 실리콘 기판위에 증착한 수소화 비정질 실리콘(a-Si:H)으로부터 가시 photoluminescence(PL) 가 관찰되었다. a-si:H/Si로 부터의 PL은 다공질실리콘으로부터의 PL과 유사하였다. 급속열처리에 의해 $500^{\circ}C$에서 2분간 산소분위기에서 어닐링된 시편의 수소함량은 1~2%로 줄어들었고 시편은 가시 PL을 보여주지 않았는데 이는 a-Si:H의 PL과정에서 수소가 중요한 역할을 한다는 것을 뜻한다. 증착된 a-Si:H의 두께가 증가함에 따라 PL의 세기는 감소하였다. $SiH_{4}$를 사용하여 ECR-PECVD에 의해 Si상에 증착된 a-Si:H로부터의 가시 PL은 Si과 증착된 a-Si:H막 사이에 증착이 이루어지는 동안에 형성된 수소화실리콘으로부터 나오는 것으로 추론된다.

• 한국세라믹학회지
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• 제38권12호
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• pp.1132-1136
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• 2001

생체친화성이 증진된 생체재료를 얻기 위하여 실리콘 원료로 tetraethyl orthosilicate를 사용하여 실리콘이 치환된 hydroxyapatite를 합성하였다. XRD 분석결과 규산이나 다른 인산칼슘염을 포함하지 않는 순수한 hydroxyapatite상 만이 존재하는 것을 확인할 수 있었다. 성분분석 결과 3.32wt% 까지의 실리콘을 함유하였다. $^{29}$ Si MAS NMR 데이터 분석결과 실리콘은 수산화아파타이트의 결정 내에서 규산염 사면체구조를 가지는 것으로 확인할 수 있었다. FT-IR 분석결과 Si 치환 수산화아파타이트에서 수산기가 감소되는 것은 silicate group의 음전하를 보상하기위한 것으로 사료되었다.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• 한국세라믹학회지
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• 제32권3호
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 한국표면공학회지
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• 제55권6호
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• pp.441-447
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• 2022

Silicon-based materials are one of the most promising anode active materials in lithium-ion battery. A carbon layer decorated on the surface of silicon particles efficiently suppresses the large volume expansion of silicon and improves electrical conductivity. Carbon coating through chemical vapor deposition (CVD) is one of the most effective strategies to synthesize carbon- coated silicon materials suitable for mass production. Herein, we synthesized carbon coated SiOx via pilot scale CVD reactor (P-SiO_x@C) and carbon coated SiO_x via industrial scale CVD reactor (I-SiO_x@C) to identify physical characteristic changes according to the CVD capacity. Reduced size silicon domains and local non-uniform carbon coating layer were detected in I-SiO_x@C due to non-uniform temperature distribution in the industrial scale CVD reactor with large capacity, resulting in increased surface area due to severe electrolyte consumption.