• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.113-114
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• 2005

Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained by chemical mechanical polishing (CMP) with commercial silica slurry as a function of pH variation. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.167-168
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• 2007

Design Rule이 작아짐에 따라 Transistor performance 향상을 위한 여러 방안중 SEG 공정이 적용되고 있으며 이에 따른 Transistor 특성 연구 결과이다. SEG공정 적용시 SEG Profile에 따라 Transistor의 Short Channel Effect 열화가 발생하였고 그 원인은 Sidewall Facet발생으로 추정되며 이를 개선시 Tr 특성이 개선됨을 확인하였다.

• Tunnel and Underground Space
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• v.6 no.1
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• pp.10-18
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• 1996

Arched openings are generally excavated in underground construction works. Since stress distribution around openings depends on geological structure in rock mass, any shape of arched openings fully conformed with in-situ stress condition should be recommended to maintain mechanical safety of structures. Shape of arched openings is specified by both roof curvature and height-width ratio, and especially this report presents deformation behaviors related with roof curvature. Scale model tests and numerical studies of various shaped openings are conducted, where rectangular opening shows the greatest convergence. Through the anlayses of various arched opengings, as radius of roof curvature is increased, roof lowering and sidewall closure are remarkably increased, whereas floor heaving is increased little by little. By the way, it is useful that displacements of openings are roughly estimated in the stage of preliminary investigation. To find out elastic displacements of arched openings with any roof curvature, regressional formula and charts by least square method are represented. In addition elastoplastic deformation behavoirs of arched openings concerning associated adn non-associated flow rule are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.146-146
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• 2010

일반적인 MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor)은 소스와 드레인의 형성을 위해서 불순물을 주입하고 고온의 열처리 과정을 거치게 된다. 이러한 고온의 열처리 과정 때문에 녹는점이 낮은 메탈게이트와 게이트 절연막으로의 high-k 물질의 사용에 제한을 받게된다. 이와 같은 문제점을 보완하기 위해서 소스와 드레인 영역에 불순물 주입공정 대신에 금속접합을 이용한 Schottky Barrier Tunnel Transistor (SBTT)가 제안되었다. SBTT는 $500^{\circ}C$ 이하의 저온에서 불순물 도핑없이 소스와 드레인의 형성이 가능하며 실리콘에 비해서 수십~수백배 낮은 면저항을 가지며, 단채널 효과를 효율적으로 제어할 수 있는 장점이 있다. 또한 고온공정에 치명적인 단점을 가지고 있는 high-k 물질의 적용 또한 가능케한다. 본 연구에서는 p-type SOI (Silicon-On-Insulator) 기판을 이용하여 Pt-silicide 소스와 드레인을 형성하고 전기적인 특성을 분석하였다. 또한 본 연구에서는 기존의 sidewall을 사용하지 않는 새로운 구조를 적용하여 메탈게이트의 사용을 최적화하였고 게이트 절연막으로써 실리콘 옥사이드를 스퍼터링을 이용하여 증착하였기 때문에 저온공정을 성공적으로 수행할 수 있었다. 이러한 게이트 절연막은 열적으로 형성시키지 않고도 70 mv/dec 대의 우수한 subthreshold swing 특성을 보이는 것을 확인하였고, $10^8$정도의 높은 on/off current ratio를 갖는 것을 확인하였다.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.204-209
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• 2004

Recently, the various performances of vehicle are rapidly improved. Therefore tire noise is recognized as important noise source because vehicle noise is considerably reduced. This study is performed for the control of the cavity resonance noise that is structure-borne noise, due to fluid(air)-structure interaction. For this investigation, FRF analysis has been carried out using FEM and we found an important factor affecting cavity resonance. The effect of this factor is confirmed by objective noise test. We confirmed that the result of FRF analysis and objective noise test is that the structure control of tire sidewall can reduce cavity resonance noise due to fluid-structure interaction

• Current Optics and Photonics
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• v.5 no.2
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• pp.129-133
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• 2021

This study observed the performance of an InAs/GaSb type-II superlattice photodiode with a p-i-n structure for mid-wavelength infrared detection. The 10 ML InAs/10 ML GaSb type-II superlattice photodiode was grown using molecular beam epitaxy. The cutoff wavelength of the manufactured photodiode with Si3N4 passivation on the mesa sidewall was determined to be approximately 5.4 and 5.5 ㎛ at 30 K and 77 K, respectively. At a bias of -50 mV, the dark-current density for the Si3N4-passivated diode was measured to be 7.9 × 10-5 and 1.1 × 10-4 A/㎠ at 77 K and 100 K, respectively. The differential resistance-area product RdA at a bias of -0.15 V was 1481 and 1056 Ω ㎠ at 77 K and 100 K, respectively. The measured detectivity from a blackbody source at 800 K was calculated to be 1.1 × 1010 cm Hz1/2/W at zero bias and 77 K.

• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
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• v.16 no.1
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• pp.103-108
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• 1987

The heat transfer processes taking place in the side wall of a thermocline enclosure have been analyzed for idealized conditions based on the assumption that, at any instant time, side wall heat transfer processses are independent of the thermocline bulk motion. However, the axial tempera-ture distribution in the thermocline core provides the means for specifying the liquid medium-side boundary condition to the enclosure side wall. A picture is drawn which reflects the side wan response to thermocline bulk motion within the frame work of a quasi-steady analytic approach. For valves of the parameters typical of systems of engineering interest, the analysis shows that a significant amount of heat transfer short - circuiting can take place along the side wall enclosure. This phenomenon is favored by high values of $H_l$ and low values of P and $H_g$ respec-tively. The location of the point of zero normal heat flux on the side wan can be expected to mark, approximately, the region of confluence of two sidewall boundary flows respectively driven by the buoyant effects.

• Journal of Sensor Science and Technology
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• v.32 no.4
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• pp.252-256
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• 2023

A one-step method for nanoscale patterning of silver ionic ink on a substrate is developed using a microscale, elastic mold deformation. This method yields unique micro/nanoscale metallic structures that differ from those produced using the original molds. The linewidth of these metallic structures is significantly reduced (approximately 10 times) through the sidewall deformation of the original mold cavity on a thin liquid film, as verified by finite element analysis. The process facilitates the fabrication of various, isolated and complex micro/nanoscale metallic structures with negligible residual layers at low cost and high throughput. These structures can be utilized for various applications, including optoelectronics, wearable sensors, and metaverse-related devices. Our approach offers a promising tool for manipulation and fabrication of micro/nanoscale structures of various functional materials.

• Journal of Animal Environmental Science
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• v.10 no.2
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• pp.93-100
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• 2004

An experiment was conducted to establish comparison of ventilation efficiency in an enclosed and conventional growing-finishing pig house. The experimental pigs were in winter and summer. The main results of the experiment are as follows : Then the air from planar slot inlet the pig house flow out through the sidewall outlet operated by exhaust fan(Gl). The second structure has an air input through the circular duct inlet are plated side the juncture of the entering wall and the air into the pig house flow out through the chimney and pit outlet are operated by exhaust fan(G2). Through the air into relay fan the pig house flow out through the curtains in sidewall(G3). Similarly, air comes in through the circular duct inlet are placed the air into the pig house flow out through the curtains in sidewall (G4). Air flow rate on the floor level which is the low part of pen and the living area of pigs in the G2 and G4 system during winter was measured at 0.2 to 0.3 m/s at the 0.5 to 0.6 m/s at the maximum ventilation efficiency. As for the results of detrimental gas(ammonia) concentration ratio analysis, while G2 and G4 system sustained of summer 13.3 $\~$ 16.6 ppm, winter 14.0 $\~$ 14.6 ppm level, Gl and G3 system sustained of summer 14.6 $\~$ 20.3 ppm, winter 20.3 $\~$ 25.0 ppm, and the latter one is lower than that of the G1 and G3 system.

• Journal of the Korean Geotechnical Society
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• v.15 no.4
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• pp.99-112
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• 1999

When there exists a fault zone ahead of the tunnel face and a tunnel is excavated without perceiving its existence, it will cause stress concentration in the region between the tunnel face and the fault zone because of the influence of the fault zone on the arching phenomena. Because the underground structure has many unreliable factors in the design stage, the prediction of a fault zone ahead of the tunnel face by monitoring plans during tunnel construction and the rapid establishment of appropriate support system are required for more economical and safer tunnel construction. Recent study shows that longitudinal displacement changes during excavation due to the change of rock property, and if longitudinal displacement and settlement, which are measured in the field, are considered together in displacement analysis, the prediction of change in rock mass property is possible. This study provided the method for the prediction of fault zones by analyzing the changes of L/C and (Ll-Lr)/C ratio (L= longitudinal displacement at crown, C = settlement at crown, Ll = longitudinal displacement at left sidewall, Lr = longitudinal displacement at right sidewall) and the stereographic projection of displacement vectors which were obtained from the 3-D numerical analysis of hybrid method in various initial stress conditions.