• Journal of IKEEE
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• v.16 no.4
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• pp.283-289
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• 2012

In this paper, We proposed Separate Gate Technique(SGT) to improve the switching characteristics of Trench power MOSFET. Low gate-to-drain 전하 (Miller 전하 : Qgd) has to be achieved to improve the switching characteristics of Trench power MOSFET. A thin poly-silicon deposition is processed to form side wall which is used as gate and thus, it has thinner gate compared to the gate of conventional Trench MOSFET. The reduction of the overlapped area between the gate and the drain decreases the overlapped charge, and the performance of the proposed device is compared to the conventional Trench MOSFET using Silvaco T-CAD. Ciss(input capacitance : Cgs+Cgd), Coss(output capacitance : Cgd+Cds) and Crss(reverse recovery capacitance : Cgd) are reduced to 14.3%, 23% and 30% respectively. To confirm the reduction effect of capacitance, the characteristics of inverter circuit is comprised. Consequently, the reverse recovery time is reduced by 28%. The proposed device can be fabricated with convetional processes without any electrical property degradation compare to conventional device.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.369-374
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• 2008

A novel fiber optic surface plasmon resonance (SPR) sensor using cyclic olefin copolymer (COC) prism with the spectral modulation is presented. The SPR sensor chip is fabricated using the SU-8 photolithography, Ni-electroplating and COC injection molding process. The sidewall of the COC prism is partially deposited with Au/Cr (45/2.nm thickness) by e-beam evaporator, and the thermal bonding process is conducted for micro fluidic channels and optical fibers alignment. The SPR spectrum for a phosphate buffered saline (0.1.M PBS, pH.7.2) solution shows a distinctive dip at 1300.nm wavelength, which shifts toward longer wavelength with respect to the bovine serum albumin (BSA)concentrations. The sensitivity of the wavelength shift is $1.16\;nm{\cdot}{\mu}g^{-1}{\cdot}{\mu}l^{-1}$. From the wavelength of SPR dips, the refractive indices (RI) of the BSA solutions can be theoretically calculated using Kretchmann configuration, and the change rate of the RI was found to be $2.3{\times}10^{-5}RI{\cdot}{\mu}g^{-1}{\cdot}l^{-1}$. The realized fiber optic SPR sensor with a COC prism has clearly shown the feasibility of a new disposable, low cost and miniaturized SPR biosensor for biochemical molecular analyses.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.71-75
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• 2001

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.17 no.6
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• pp.569-580
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• 2005

The present study investigates the convective heat/mass transfer characteristics in wavy ducts of a primary surface heat exchanger. The effects of duct aspect ratio and flow velocity on the heat/mass transfer are investigated. Local heat/mass transfer coefficients on the corrugated duct sidewall are determined using a naphthalene sublimation technique. The aspect ratios of the wavy duct are 7.3, 4.7 and 1.8 with the corrugation angle of $145\Omega$. The Reynolds numbers, based on the duct hydraulic diameter, vary from 300 to 3,000. The results show that at the low Re(Re $\leq$ 1000) the secondary vortices called Taylor-Gortler vortices perpendicular to the main flow direction are generated due to effect of duct curvature. By these secondary vortices, non-uniform heat/mass transfer coefficients distributions appear. As the aspect ratio decreases, the number of cells formed by secondary vortices are reduced and secondary vortices and comer vortices mix due to decreased aspect ratio at Re$\leq$1000. At Re >1000, the effects of corner vortices become stronger. The average Sh for the aspect ratio of 7.3 and 4.7 are almost same. But at the small aspect ratio of 1.8, the average Sh decreases due to decreased aspect ratio. More pumping power (pressure loss) is required for the larger aspect ratio due to the higher flow instability.

• Design & Manufacturing
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• v.13 no.1
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• pp.5-12
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• 2019

In this paper, we studied the micro tool deflection, micro cutting with low temperature, and deformation of micro ribs caused by cutting forces. First, we performed an integrated machining error compensation method based on captured images of tool deflection shapes in micro cutting process. In micro cutting process, micro tool deflection generates very serious problems in contrast to macro tool deflection. To get the real images of micro tool deflection, it is possible to estimate tool deflection in cutting conditions modeled and to compensate for machining errors using an iterative algorithm correcting tool path. Second, in macro cutting fields, the cryogenic cutting process has been applied to cut the refractory metal but, the serious problem may be generated in micro cutting fields by the cryogenic environment. However, if the proper low temperature is applied to micro cutting area, the cooling effect of cutting heat is expected. Such effect can make the reduction of tool wear and burr formation. For verifying this passibility, the micro cutting experiment at low temperature was performed and SEM images were analyzed. Third, the micro pattern was deformed by the cutting forces and the shape error occurred in the sidewall multi-step cutting process were minimized. As the results, the relationship between the cutting conditions and the deformation of micro-structure during micro cutting process was investigated.

• Journal of Korea Water Resources Association
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• v.52 no.4
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• pp.255-264
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• 2019

The trapezoidal ribs had been installed in the retaining wall in order to reduce to flood damage in the impingement of mountain rivers. In this study, experiments in open channel with the trapezoidal ribs on sidewall were conducted to evaluate the effect of flow resistance by the trapezoidal shape. The hydraulic flow characteristics according to the flow rates were surveyed where the wall roughness is k-type that dimensionless spacings, ${\lambda}_{nv}$, are 6, 9, and 12. The flow-resistance factors such as roughness and friction coefficients increased generally with increase of the spacing of ribs. In high flow rate the friction coefficient showed the maximum value when ${\lambda}_{nv}$ is 9. Though the trapezoidal ribs has the relatively smaller flow resistance compared to the square ribs, their form drag accounted for mean 62% of the total flow resistance. It was confirmed that the optimal spacing of trapezoidal ribs to maximize the effect of flow resistance as the wall roughness increases are 9 to 12 times of the height of trapezoidal ribs.

• Journal of the Korean Geographical Society
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• v.43 no.3
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• pp.296-311
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• 2008

In order to examine the rates and factors of path widening in Mount Halla, the retreat of path sidewalls was monitored at 32 sites of Seongpanak Hiking Trail located between 875 m and 1,400 m in elevation. The mean rate of sidewall retreat for the period 2002-2008 is 50.6 mm, equivalent to 10.0 mm/yr. The retreat rate of frozen period is 19.3 mm/yr, while the rate of unfrozen period is 4.3 mm/yr. The latter is divided into the rainy and dry periods that exhibit the retreat rates of 5.9 mm/yr and 2.9 mm/yr, respectively. The retreat rate of sidewalls is also varied with seasons; winter shows the maximum rate of 42.2 mm/yr, while summer exhibits the minimum rate of 1.3 mm/yr. Spring and fall show the intermediate rates of 13.9 mm/yr and 6.4 mm/yr, respectively. Soil hardness and elevation are not closely related to the retreat rate of sidewalls, even though the retreat rate is larger at the north-faced sidewalls than the south-faced sidewalls during the frozen period. Pipkrake is likely to be the most important factor contributing to the path widening in that the retreat of winter months accounts for 76.7% of the total retreat. The hiking trail is placed under the climatic conditions which develop pipkrake in 85 days annually. In addition, it is usual to observe the path sidewall covered with pipkrake in the freezing month of December and the thawing months of March and April. On the other hand, deflation and rainsplash erosion are not important due to the weak wind speed and the forested trail. Rainwash is also insignificant in that the path has been almost paved to mitigate trampling effects. Although biological activity is not dominant, hikers cause a large retreat of sidewalls in the thawing months since they would walk on the sidewalls to avoid snow-melting pools on the path.

• Journal of Animal Environmental Science
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• v.18 no.1
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• pp.1-8
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• 2012

The study was conducted to investigate the effects of climate on indoor environment of a swine house with natural. This study was tested in the beef swine stall at Young-in, Kyung-ki do. The test was experimented for the effect of interior environment by the outdoor environment and the interior-pan. The results are as follows. 1. In test 1 ($T_{out}$ : $25.7^{\circ}C$, without fan), an indoor air flow pattern was showed that entered from sidewall winch-curtain to went out of a indoor by the ridge winch-curtain. And the velocity of a section of the center was measured two times as large as the velocity of the floor. It is the acceleration of the velocity by thermal buoyancy. And, the entered air was rapidly dissipated by flow energy. So that in the swain livestock with sidewall winch-curtain is effected by thermal buoyancy. And the air temperature of the indoor was distributed more higher as compared with the outdoor temperature. This result is caused by the sensible heat from swine and the ventilation is restricted. 2. In test 2 (($T_{out}$ : $25.7^{\circ}C$, with fan), the velocity of a section of the center was measured more higher as compared with the test 1. And the variance of air velocity was distributed higher as compared with the test 1. This result is showed dead region of air flow with a fan operation. And, the variance of gas density was distributed lower as compared with the test 1.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.