• 한국초전도학회:학술대회논문집
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• v.9
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• pp.343-347
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• 1999

We fabricated a resistive SFCL having a shunt resistor parallel to it in order to bifurcate the transient current at faults. The SFCL consists of a YBCO film coated with an Au layer (10 ${\omega}$ at room temperature), which is to disperse the heat generated at hot spots in the YBCO film, and the 5 ${\omega}$ shunt resistor. The minimum quench current of the SFCL was found to be 12.2 A$_{peak}$. This SFCL successfully controlled the fault current below 23 A$_{peak}$ which is otherwise to increase up to 113 A$_{peak}$. Bifurcation of the current resulted in the temperature rise of the YBCO/Au film 3 times slower than without the shunt, protecting the SFCL at high currents.

• ETRI Journal
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• v.35 no.4
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• pp.730-733
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• 2013

In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a solar cell strongly depends on the arrangement and thickness of the buffer layer. When arranging buffer layers with various bandgaps in ascending order from the intrinsic layer to the n layer, a relatively high open circuit voltage and short circuit current are observed. In addition, the fill factors are improved, owing to an enhanced shunt resistance under every instance of the introduced n/i buffer layers. Among the various conditions during the arrangement of the buffer layers, a reverse V shape of the energy bandgap is found to be the most effective for high efficiency, which also exhibits intermediate transmittance among all samples. This is an inspiring result, enabling an independent control of the conversion efficiency and transmittance.

• International Journal of Safety
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• v.6 no.1
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• pp.22-25
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• 2007

Damping out high frequency low amplitude structural vibrations using PZT bimorph is presented. Static and Dynamic analyses of the piezoelectric bimorph bender were performed. Three layer piezoelectric actuators were modeled with SOLID5 coupled-field elements using ANSYS. Static deflection and modal analyses of the piezoelectric bimorph bender are presented. Proper tuning of the values of the resistor and inductor in the shunt circuit is required for maximum vibration suppression.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1042-1047
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• 2004

Voltage control is an essential part of the electric energy transmission and distribution system to maintain proper voltage limit at the consumer's terminal. Besides the generating units that provide the basic voltage control, there are many additional voltage-controlling agents e.g., shunt capacitors, shunt reactors, static VAr compensators, regulating transformers mentioned in [1], [2]. The most popular one, among all those agents for controlling voltage levels at the distribution and transmission system, is the on-load tap changer transformer. It serves two functions-energy transformation in different voltage levels and the voltage control. Artificial Neural Network (ANN) has been realized as a convenient tool that can be used in controlling the on load tap changer in the distribution transformers. Usage of the ANN in this area needs suitable training and testing data for performance analysis before the practical application. This paper briefly describes a procedure of processing the data to train an Artificial Neural Network (ANN) to control the tap changer operating decision of parallel transformers for a closed primary bus. The data set are used to train a two layer ANN using three different neural net learning algorithms, namely, Standard Backpropagation [3], Bayesian Regularization [4] and Scaled Conjugate Gradient [5]. The experimental results are presented including performance analysis.

• Journal of the Korean institute of surface engineering
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• v.39 no.2
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• pp.57-63
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• 2006

In this study, In-base solder was applied to the interface between $Bi_2Sr_2Ca_1Cu_2O_x(Bi_{2212})$ superconductor and Cu-Ni shunt metal at the temperature lower than $150^{\circ}C$. Most of the cases, $Bi_{2212}$ superconductor was precoated with Ag by electroplating in order to improve the contact properties of the solder layer. When the superconductor was directly soldered on to the superconductor, the solder was easily separated without external force. The shear strength of the contact between superconductor and shunt metal increased from 69.2 kgf to 74.4 kgf and 80.1 kgf, as the current density of the Ag electroplating was changed from 63 mA to 96 mA and 126 mA, respectively. The contact strength also increased to 49.9 kgf and 69.2 kgf when thickness of the electroplated Ag layer increased to $5{\mu}m$ and $10{\mu}m$, reapectively.

• Proceedings of the KIEE Conference
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• 2001.04a
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• pp.67-68
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• 2001

We present the basic properties of a superconductive current limiting fuse (SCLF) based on YBCO/Au films. The SCLF consists of meander type YBCO stripes covered with an Au layer for current shunt. The fault current was first limited to a designed value in less than 0.4 msec by resistance development in YBCO/Au upon quenching. This enables the SCLF to transfer small fault power and the suppressed current was sustained for more than 0.5 msec while Au layer melting and arcing. The arcing time was less than 2.5 msec, that is short enough to do self-interruption.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.318-320
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• 2004

We investigated the basic properties of a superconductive current limiting fuse (SCLF) based on YBCO/Au films. The SCLF consists of meander type YBCO stripes covered with an Au layer for current shunt. The fault current was first limited to a designed value in less than 0.4 msec by resistance development in YBCO/Au upon quenching. This enables the SCLF to transfer small fault power and the suppressed current was sustained for more than 0.5 msec while Au layer melting and arcing. The arcing time was less than 2.5 msec, that is short enough to do self-interruption.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.59-62
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• 2013

We investigated the effects of ZnO thin film deposition methods on the performance of inverted polymer solar cells with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Al. The ZnO thin films were deposited by various methods (spin coating of nanoparticles, sol-gel process, atomic layer deposition) and their morphology was analyzed by atomic force microscopy (AFM). The device with ZnO nanoparticle thin films showed the highest power conversion efficiency of 3 % with low series resistance and high shunt resistance. The superior performance of the device with the ZnO nanoparticle layer is attributed to better electron extraction capability.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.75-80
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• 2019

Silicon solar cells have been widely used as a most promising renewable energy source due to eco-friendliness and high efficiency. As modules of silicon solar cells are connected in series for a practical electricity generation, a large voltage of 500-1,500 V is applied to the modules inevitably. Potential-induced degradation (PID), a deterioration of the efficiency and maximum power output by the continuously applied high voltage between the module frames and solar cells, has been regarded as the major cause that reduces the lifetime of silicon solar cells. In particular, the migration of the $Na^+$ ions from the front glass into Si through the anti-reflection coating and the accumulation of $Na^+$ ions at stacking faults inside Si have been reported as the reason of PID. In this research, the thickness effect of $SiO_x$ layer that can block the migration of $Na^+$ ions on the reduction of PID is investigated as it is incorporated between anti-reflection coating and p-n junction in p-type PERC solar cells. From the measurement of shunt resistance, efficiency, and maximum power output after the continuous application of 1,000 V for 96 hours, it is revealed that the thickness of $SiO_x$ layer should be larger than 7-8 nm to reduce PID effectively.