• JSTS:Journal of Semiconductor Technology and Science
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• 제13권2호
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• pp.127-138
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• 2013

The impact of Empty Space layer in the channel region of a Double Gate (i.e. ESDG) MOSFET has been studied, by monitoring the DC, RF as well as the digital performance of the device using ATLAS 3D device simulator. The influence of temperature variation on different devices, i.e. Double Gate incorporating Empty Space (ESDG), Empty Space in Silicon (ESS), Double Gate (DG) and Bulk MOSFET has also been studied. The electrical performance of scaled ESDG MOSFET shows high immunity against Short Channel Effects (SCEs) and temperature variations. The present work also includes the linearity performance study in terms of $VIP_2$ and $VIP_3$. The proper bias point to get the higher linearity along with the higher transconductance and device gain has also been discussed.

• 문화기술의 융합
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• 제7권4호
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• pp.659-665
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• 2021

최근 폭발적인 인기를 끌고있는 짧은 동영상 애플리케이션(e.g., TikTok, YouTube Shorts)은 광고집행을 위한 새로운 SNS 플랫폼으로 관심을 받고 있다. 이러한 배경에서 본 연구는 짧은 동영상 애플리케이션에서 집행되고 있는 스토리텔링 광고를 분류하고 그 효과를 측정하는 것을 목적으로 한다. 상술 하면, 전통적 광고 분류기준인 허구성을 기준으로 스토리텔링 광고를 리얼리티, 패러디, 창의형식으로 구분하였다. 또한 인지심리학 정보처리 맥락에서 높은 수준과 낮은 수준의 메시지가치가(MSV)로 광고들을 분류하였다. 전 세계적으로 가장 많은 이용자를 보유한 틱톡을 대상으로 총 784명 중국인 이용자의 응답을 수집하였다. 연구결과 두 개의 주요 변인(허구성과 MSV) 간에 유의미한 조절효과가 발생하였다. 가장 주목할 만한 결과는 정보처리 리소스의 사용을 높게 요구하는 높은 허구성의 창의적 기법이 높은 메시지자극가를 사용하게 되면 인지과부하(cognitive overload)를 야기하여 광고효과가 낮아지는 것으로 나타났다. 보다 자세한 이론적 논의와 효과적인 짧은 동영상 스토리텔링 광고제작을 위한 제언들을 본문에서 상세히 소개하였다.

• The Korean Journal of Physiology and Pharmacology
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• 제8권5호
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• pp.289-293
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• 2004

To investigate whether VacA (vacuolating toxin) produced by Helicobacter pylori Korean stain 99 induces intestinal secretion, purified VacA was added to T84 cell monolayers mounted in Ussing chambers, and electrical parameters were monitored. Mucosal addition of low pH-pretreated VacA increased short circuit current (Isc). The effect was time- and dose-dependent and saturable. The time-to-peak Isc was concentration-dependent. Chloride channel inhibitors, niflumic acid or 5-nitro-2-(3-phenylpropylamino)-benzoate (NPPB), inhibited VacA-stimulated Isc. Carbachol (CCh)-induced increase of Isc was prolonged by the addition of VacA to the mucosal side only. The effect was unaltered by the addition of niflumic acid. VacA did not show cytopathic effects. These studies indicate that VacA is a nonlethal toxin that acts in a polar manner on T84 monolayers to potentiate $Cl^-$ secretion and the response to CCh secretion without decrease in monolayer resistance. VacA may contribute to diarrhea diseases in human intestinal epithelial cells.

• Journal of Medicine and Life Science
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• 제15권2호
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• pp.62-66
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• 2018

A-type $K^+$ ($I_A$) channels are transiently activated in the suprathreshold membrane potential and then rapidly inactivated. These channels play roles to control the neuronal excitability in pyramidal neurons in hippocampi. We here electrophysiologically tested if regulatory functions of $I_A$ channels might be targeted by acute activation of glutamatergic synaptic transmission in cultured hippocampal neurons(DIV 6~8). The application of high KCl in recording solutions(10 mM, 2 min) to increase presynaptic glutamate release, significantly reduced the peak of somatic $I_A$ without changes of gating kinetics. This indicates that neuronal excitation induced by the enhancement of synaptic transmission may process with distinctive signaling cascades to affect voltage-dependent ion channels in hippocampal neurons. Therefore, it is possible that short-lasting enhancement of synaptic transmission is functionally restricted in local synapses without effects on intracellular signaling cascades affecting a whole neuron, efficiently and rapidly enhancing synaptic functions in hippocampal network.

• 대한환경공학회지
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• 제27권9호
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• pp.952-957
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• 2005

분산형 비점오염원 모델에서 단위유역 크기의 영향을 검토하기 위하여 민감도 분석 연구를 실시하였다. 미농무성의 AGNPS 모델에서 변형된 AnnAGNPS 모델을 남한강 수계의 청미천의 지류인 응천 유역에 적용하였다. 10에서 200 헥타르에 이르는 다양한 단위유역 크기에 따라 유로연장, 경사, 토지 이용, 유달율 등과 같은 모델 요소와 결과를 분석하였다. 단위유역의 크기가 증가함에 따라 휘어진 하천이 단거리로 계산되기 때문에 유로연장이 감소하게 되고, 이것은 다른 어떤 지형 변화보다 모델 결과에 중요한 영향을 미치는 것으로 나타났다. 토지 이용도와 토양 분포 효과가 제외되었을 경우, 단위유역이 클수록 유역의 최종유출구까지 도달하는 시간이 짧아져 토사 유달 부하량이 증가하였다. 그러나 이러한 영향이 포함되었을 경우, 단위유역이 클수록 적용 유역의 토지이용의 다양도가 포함될 수 없기 때문에 토사 유달 부하량이 감소하였다. 적용 유역은 토양 침식이 낮은 임야로 이루어져 단위유역이 큰 경우에는 임야 비율이 더욱 증가하여 유달 부하량이 감소하게 된 것이다. 적용 유역에서는 30 헥타르의 단위 유역이 가장 적합한 크기로 결정되었다. 강우 유출수량과 총질소, 총인, 생물화학적 산소요구량을 모델에서 예측하였으며 현장 측정치와 적절히 일치하였다. 본 연구를 통하여 모델 결과는 단위유역 크기에 따라 변하는 지형, 토지 이용, 토양분포 변이에 민감하게 변하며, 성공적인 분산형 모델적용을 위하여 최적의 단위유역 크기를 사용하는 것이 매우 중요하다는 결론을 얻었다.

• 전자공학회논문지D
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• 제35D권8호
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• pp.31-37
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• 1998

A new self-consistent hole mobility model that includes lattice and hole temeprature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicted the saturation of hole drift velocity and showed the effects of coulomb scattering, surface phonon scattering, and surface roughness scattering. The calculated data by the model were compared with the reported experimental data and they were shown to agree quite well. The new model is expected to estimate the characteristics of very short channel devices in the in the hydrodynamic model simulation.

• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1481-1486
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• 2013

In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.

• 진공이야기
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• 제3권1호
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• pp.16-21
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• 2016

FinFETs are able to be scaled down to 22 nm and beyond while suppressing effectively short channel effect, and have superior performance compared to 2-dimensional (2-D) MOSFETs. Bulk FinFETs are built on bulk Si wafers which have less defect density and lower cost than SOI(Silicon-On-Insulator) wafers. In contrast to SOI FinFETs, bulk FinFETs have no floating body effect and better heat transfer rate to the substrate while keeping nearly the same scalability. The bulk FinFET has been developed at 14 nm technology node, and applied in mass production of AP and CPU since 2015. In the development of the bulk FinFETs at 10 nm and beyond, self-heating effects (SHE) is becoming important. Accurate control of device geometry and threshold voltage between devices is also important. The random telegraph noise (RTN) would be problematic in scaled FinFET which has narrow fin width and small fin height.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.149-152
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• 2003

Soruce/drain (or, LDD) formation technology is critical to device reliability especially in the case of short channel LTPS-TFT devices. Ion shower doping with a main ion source of $P_2H_x$ was conducted on ELA Poly-Si. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.