• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.39-40
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• 2008

• Journal of Advanced Marine Engineering and Technology
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• v.7 no.1
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• pp.34-39
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• 1983

Development of modern internal combustion engine requires more precise indicator. In the case of strain gage-strain tube type indicator, thermal expansion of the indicator's fixed part makes zero-shift in spite of water cooling. Therefore, the authors analyzed the cause of zero-shift phenomenon on strain gage-strain tube type indicator and proposed a new device to compensate the zero-shift of indicator by electrical method without detoriorating the dynamic charcteristic. As the results, we found that the zero-shift is varied linearlly according to temperature variation of the indicator's fixed part and appling a new device, we can improve the zero-shift of indicator about 0.63% (0.63 kg/$cm^2$) of full scale, though we got 10% of it without the device at the cylinder head operating temperature (c.a. $200^{\circ}C$).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.230-244
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• 1996

We derive analytic expressions for the spontaneous emission spectrum (SES) of a multisection distributed feedback (DFB) structure device employing complex coupled gratings including the effects of both facets reflections. The multisection DFB structure device used in the analysis is a general model which allows the independent phase of a grating in each section, and the sections without gratings. The expressions are the same as those derived by makino and glinski in case the gratings are index coupled and the phase of a grating in each section, ${\varphi}_k$ is '0' which means the phase of gratings in the device is ocntinuous. The expressions for the SES of a phase-shift-controlled (PSC) DFB structure device using tunable devices are derived from the general expressions. The number of parametes of the expressions is reduced by using the parameter of effective phase shift defined by the sum of the phase shift in a PSC region and the difference of the phase of a grating in each active region. Equations showing the effect of both facets reflections and the effective phase shift on the SES are derived. The validaty of the equations is verified by computer simultions. Computer simulation results also show the possibility of evaluating the structure parametes of the device from its SES.

• Journal of Digital Contents Society
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• v.16 no.1
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• pp.157-164
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• 2015

The existing input device is limited to keyboard and mouse. However, recently new type of input device has been developed in response to requests from users. To reflect this trend we propose the new type of input device that gives instruction as analyzing the hand motion of image without special device. After binarizing the skin color area using Cam-Shift method and tracking, it recognizes the hand motion by inputting the finger areas and the angles from the palm center point, which are separated through labeling, into four cardinal directions and counting them. In cases when specific background was not set and without gloves, the recognition rate remained approximately at 75 percent. However, when specific background was set and the person wore red gloves, the recognition rate increased to 90.2 percent due to reduction in noise.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1764-1770
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• 2020

The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.

• Journal of the Korea Safety Management & Science
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• v.10 no.4
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• pp.145-152
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• 2008

According to the Korea Agency for Technology and Standards under the Commerce Ministry, OLED device's lifetime is defined 50% drop of luminance. OLED device is self-emitting operating device, that means it becomes different color between pixels under using environment. That's reason of the different luminance drop ratio & chromaticity coordinates shift ratio with time. The problem is there is not recovered after luminance drop and color shift. We can recognize the difference of color as image sticking. First we studied when human recognize the difference of color and second we apply the method of OLED device's lifetime test that's able to check different color between pixels.

• Proceedings of the Safety Management and Science Conference
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• 2008.11a
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• pp.131-143
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• 2008

According to the Korea Agency for Technology and Standards under the Commerce Ministry, OLED device's lifetime is defined 50% drop of luminance. OLED device is self-emitting operating device, that means it becomes different color between pixels under using environment. That's reason of the different luminance drop ratio & chromaticity coordinates shift ratio with time. The problem is there is not recovered after luminace drop and color shift. We can recognize the difference of color as image sticking. First we studied when human recognize the difference of color and second we apply the method of OLED device's lifetime test that's able to check different color between pixels

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.131-137
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• 2005

This paper describes a new approach to the algorithm and fundamental characteristics of the device for monitoring the leakage currents flowing through zinc oxide (ZnO) surge arresters. In order to obtain a technique for a new on-line monitoring device that can be used in the deterioration diagnosis of ZnO surge arresters, the new algorithm and on-line leakage current detection device for extracting the resistive and capacitive currents using the phase shift addition method were proposed. The computer-based on-line monitoring device can sense accurately the power frequency leakage currents flowing through ZnO surge arresters. The on-line leakage current monitoring device of ZnO surge arresters proposed in this work has the high sensitivity compared to the third harmonic leakage current detection devices. As a consequence, it was found that the proposed leakage current monitoring device would be useful for forecasting the defects and degradation of ZnO surge arresters.

• Journal of the Institute of Convergence Signal Processing
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• v.18 no.2
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• pp.68-75
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• 2017

This study deals with a color-based tracking method of a moving object effectively in case that the color of the moving object is same as or similar to that of background. The CamShift algorithm, which is the representative color-based tracking method, shows unstable tracking when the color of moving objects exists in the background. In order to overcome the drawback, this paper proposes the CamShift algorithm merged with depth information of the object. Depth information can be obtained from Kinect device which measures the distance information of all pixels in an image. Experimental result shows that the proposed tracking method, the Camshift merged with depth information of the tracking object, makes up for the unstable tracking of the existing CamShift algorithm and also shows improved tracking performance in comparison with only CamShift algorithm.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1407-1410
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• 2007

This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches $35000\;cd/m^2$ at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to $35000\;cd/m^2$ and reaches its highest 1.6% at $500\;cd/m^2$. The chromaticity coordinate shift of the device is negligible in this wide range of luminance. The blue shift of emission color with an increase of current density was attributed to the narrowing of recombination zone width with raise of current density.