한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Fluorescent white organic light-emitting diode structures with dye doped hole transporting layer

  • Galbadrakh, R. (School of Physics and Electronics, National University of Mongolia) ;
  • Bang, H.S. (School of Electrical Engineering and Computer Science and Inter-university Semiconductor Research Center, Seoul National University) ;
  • Baek, H.I. (School of Electrical Engineering and Computer Science and Inter-university Semiconductor Research Center, Seoul National University) ;
  • Lee, C.H. (School of Electrical Engineering and Computer Science and Inter-university Semiconductor Research Center, Seoul National University)
  • Published : 2007.08.27
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Abstract

This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches $35000\;cd/m^2$ at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to $35000\;cd/m^2$ and reaches its highest 1.6% at $500\;cd/m^2$. The chromaticity coordinate shift of the device is negligible in this wide range of luminance. The blue shift of emission color with an increase of current density was attributed to the narrowing of recombination zone width with raise of current density.

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