• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.6-11
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• 2008

An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.68-69
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• 2007

To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Proceedings of the KAIS Fall Conference
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• 2009.05a
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• pp.810-812
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• 2009

반도체 소자공정에서 균일한 두께의 금속박막을 증착하는 것은 매우 중요하다. sputtering 방법의 경우, 증착조건을 조절하기 쉽고, 특히 대형 기판을 사용하여 제조할 경우 박막의 두께 등 박막 특성의 균일화를 기하는데 용이한 장점을 가지고 있다. 하지만, 기존의 기판고정식 sputtering 장비로 증착한 Al 박막은 증착 시에 가해지는 전력의 크기에 따라 그 특성의 변화를 생긴다. 이런 전력의 크기에 따른 Al 박막의 reflectance, sheet resistance 그리고 uniformity 등을 분석하여 Al 박막의 우수한 증착 조건을 알 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1415-1417
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• 2009

High transmittance and low resistance index matched transparent conducting oxide (IMTCO) coated glass was prepared and characterized. IMTCO was deposited by RF magnetron sputtering with the thickness of 15nm and 90nm thick anti-reflection layer was evaporated. To modify surface to hydrophilic, in-situ plasma treatment was also performed. IMTCO coated glass exhibited 96.6% of transmittance in the wavelength range of 400~700nm which is relatively high value compared to commercially available IMTCO glass. The sheet resistance uniformity was measured to be 1.53%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.96-99
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• 1993

Electrical properties of the Thin Film Transistor(TFT) electrode metal films were investigated through the Test Elements Group(TEG) experiment. The main purpose of this investigation was to characterize the electrical resistance properties of patterned metal films with respect to the variations of film thickness and TEG metal line width. Aluminum(Al), Tantalum(Ta) and Chromium(Cr) that are currently used as TFT electrode films were selected as the probed metal films. To date, no work in the electrical characterizations of patterned electrodes of a-Si TFT was accomplished. Bulk resistance$(R_b)$, sheet resistance$(R_s)$, and resistivities($\rho$) of TEG patterned metal lines were obtained. Electrical continuity test of metal film lines was also performed in order to investigate the stability of metallization process. Almost uniform-linear variations of the electrical properties with respect to the metal line displacements was also observed.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.440-446
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• 2009

Indium tin oxide(ITO) substrate is one of the key components of the touch panel and its sputtering process is dependent on the characteristics of various touch panel, such as driving type, size of panel, and the intended use. In this study, we optimized the sputtering condition of ITO film on polycarbonate(PC) by using in-line sputtering method for the application to resistive type touch panel. We varied the $O_2$/Ar gas ratio, sputtering power, pressure and moving speed of substrate to deposit ITO films at room temperature with the base vacuum of $1{\times}10^{-6}\;torr$. The sheet resistance and its uniformity, the transmittance, the thickness of the ITO film on PC substrate are investigated and analyzed. The optimized process parameters are as follows : the sheet resistance is $500{\pm}50\;{\Omega}$/□, the uniformity of sheet resistance is lower than 10%, the transmittance is higher than 87 % at 550nm, and the thickness is about 120~250. The optimized deposition conditions by in-line sputtering method can be applied to the actual mass production for the ITO film manufacturing technology.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.455-459
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• 2017

The development of flexible transparent electrode has been paid attention for flexible electronics. In this study, we have developed transparent electrode based on silver nanowires with improved electrical property and stability through ion-beam treatment. The energetic particles of ion-beam could sinter junctions of each silver nanowires and etch out polyvinylpyrollidone(PVP) coated on silver nanowires. The sheet resistance of silver nanowire transparent electrode was reduced by 74%, and the resistance uniformity was increased about 3 times after exposure of ion beam. Moreover, the stability at $85^{\circ}C$ of temperature and 85% of relative humidity could be also improved.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.158-162
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• 2015

To substitute indium tin oxide (ITO), many substituents have been studied such as metal nanowires, carbon based materials, 2D materials, and conducting polymers. These materials are not good enough to apply to an electrode because theses exhibit relatively high resistance. So metal grids are required as an additionalelectrode to improve the conductivities of substituents. The metal grids were printed by electrohydrodynamic printing system using Ag nanoparticle based ink. The Ag grids showed high uniformity and the line width was about $10{\mu}m$. The Ag nanoparticles are surrounded by dispersants such as unimolecular and polymer to prevent aggregation between Ag nanoparticles. The dispersants lead to low conductivity of Ag grids. Thus, the sintering process of Ag nanoparticles is strongly recommended to remove dispersants and connect each nanoparticles. For sintering process, the interface and microstructure of the Ag grid were controlled in 1.0 torr Ar atmosphere at aound $400^{\circ}C$ of temperature. From the sintering process, the uniformity of the Ag grid was improved and the defects on the Ag grids were reduced. As a result, the resistivity of Ag grid was greatly reduced up to $5.03({\pm}0.10){\times}10^{-6}{\Omega}{\cdot}cm$. The metal grids embedded substrates containing low pressure Ar sintered Ag grids showed 90.4% of transmittance in visible range with $0.43{\Omega}/{\square}$ of sheet resistance.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.3
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• pp.79-81
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• 2008

A single-wall carbon nanotube (SWNT) transparent conductive film (TCF) was fabricated using a simple inkjet printing method. The TCF could be selectively patterned by controlling the dot size to diameters as small as $34{\mu}m$. In this repeatable and scalable process, we achieved 71% film transmittance and a resistance of 900 ohm/sq sheet with an excellent uniformity, about ${\pm}5%$ deviation overall. Inkjet printing of SWNT is substrate friendly and the TCF is printed on a flexible substrate. This method of fabrication using direct printing permits mass production of TCF in a large area process, reducing processing steps and yielding low-cost TCF fabrications on a designated area using simple printing.