• 한국지반공학회:학술대회논문집
• /
• 한국지반공학회 2002년도 가을 학술발표회 논문집
• /
• pp.569-576
• /
• 2002

Recently, the hydraulic fill method is commonly used in many reclamation projects due to lack of fill materials. The method of hydraulic fill in reclamation is executed by transporting the mixture of water-soil particles into a reclaimed land through dredging pipes, then the dredged soil particles settle down in the water or flow over an out flow weir with the water. In the present study, to compare the soil and sand-mat mixed method with sand-air jet method for shallow improvement of hydraulic fills at southern seashore, the model tests were performed. Through the model test results, the behavior of surface as disturbance of desiccation crust is analyzed.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2006년도 추계학술발표회 초록집
• /
• pp.77-77
• /
• 2006

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.421-424
• /
• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권2호
• /
• pp.136-147
• /
• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• 소성∙가공
• /
• 제14권4호
• /
• pp.392-398
• /
• 2005

The deterioration of dimensional accuracy, caused by springback, is one of problems to always occur In sheet metal forming processes. As the demand for lighter and stronger metals increases, the development of improved forming processes settling the springback problem becomes more important. In this work, asymmetric springback phenomena are investigated, which occur in the shallow-drawing process with the anisotropic sheet metal and axisymmetric tools. The improvement possibility of dimensional accuracies, mainly, flatness, was examined by applying segmented blank holding forces as a method for springback control.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제10권4호
• /
• pp.260-264
• /
• 2010

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

• Journal of Biosystems Engineering
• /
• 제25권2호
• /
• pp.79-88
• /
• 2000

Effects on tractive performance of design parameters of cage wheel as a traction aid to driving tires of tractor in wet paddy field were investigated experimentally. an experimental cage wheel was designed so that the design parameters such as wheel diameter, wheel width, lug pitch and lug angle could be varied during traction test, The traction test was conducted in two different types of wet paddy field ; shallow and deep harpan fields . Experimental results showed that tractive performance is affected by both soil conditions and the design parameters. A considerable improvement on the tractive performance was obtained by using a cage wheel with 45$^{\circ}$ lug angle in shallow hardpan and smaller lug pitch in deep hardpan. The diameter of cage wheel was mostly influential to the tractive performance both in shallow and deep hardpans.

• 한국지반공학회논문집
• /
• 제25권7호
• /
• pp.11-21
• /
• 2009

본 논문은 사질토 지반에서 천층터널의 신개념 고성능 지보시스렘을 연구하였으며 새로운 지보시스템의 메카니즘 제안과 기존의 지보시스템과의 비교 분석을 시행하였다. 새로운 지보시스템인 선지보 시스템은 터널의 굴착전에 지반을 보강해주는 효과와 터널의 지보력을 증가시켜주는 여러 가지 장점이 있다. 본 연구에서는 선지보 시스템의 시공순서를 분석하고 터널 시공시 선지보 시스템의 적용성을 검증하기위해 수치해석을 수행하였다. 신개념 지보시스템을 분석한 결과, 신개념 고성능 터널지보시스템은 천층터널에서의 적용성이 뛰어나며, 터널 입 출구, 토사터널, 연약지반에서의 적용성 또한 뛰어난 것으로 판단되어졌다.

• 한국전기전자재료학회논문지
• /
• 제13권9호
• /
• pp.729-734
• /
• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• 한국산림과학회지
• /
• 제102권3호
• /
• pp.463-466
• /
• 2013

이 연구에서는 1963년부터 2012년까지 과거 50여 년간 우리나라 전역에서 발생한 478건의 산사태를 대상으로 시간단위 강우자료와 분위회귀분석을 토대로 산사태 유발강우의 강도(I, mm/hr)-지속시간(D, hrs) 관계를 해석하였다. 그 결과, I-D 한계식 "$I=9.64D^{-0.27}$, $4{\leq}D{\leq}76$" 이 도출되었고, 발생확률별 강우강도-지속시간 관계식을 제시할 수 있게 되었다. 따라서 이 연구의 결과는 광역적 산사태 예 경보 시스템의 개선 및 실효성 향상에 필요한 기초자료를 제공할 수 있을 것으로 기대된다.