• Title/Summary/Keyword: sensor nonlinearity

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Design and Evaluation of a CMOS Image Sensor with Dual-CDS and Column-parallel SS-ADCs

  • Um, Bu-Yong;Kim, Jong-Ryul;Kim, Sang-Hoon;Lee, Jae-Hoon;Cheon, Jimin;Choi, Jaehyuk;Chun, Jung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.110-119
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    • 2017
  • This paper describes a CMOS image sensor (CIS) with dual correlated double sampling (CDS) and column-parallel analog-to-digital converter (ADC) and its measurement method using a field-programmable gate array (FPGA) integrated module. The CIS is composed of a $320{\times}240$ pixel array with $3.2{\mu}m{\times}3.2{\mu}m$ pixels and column-parallel 10-bit single-slope ADCs. It is fabricated in a $0.11-{\mu}m$ CIS process, and consumes 49.2 mW from 1.5 V and 3.3 V power supplies while operating at 6.25 MHz. The measured dynamic range is 53.72 dB, and the total and column fixed pattern noise in a dark condition are 0.10% and 0.029%. The maximum integral nonlinearity and the differential nonlinearity of the ADC are +1.15 / -1.74 LSB and +0.63 / -0.56 LSB, respectively.

Non linear analysis of a functionally graded square plate with two smart layers as sensor and actuator under normal pressure

  • Arefi, M.;Rahimi, G.H.
    • Smart Structures and Systems
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    • v.8 no.5
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    • pp.433-447
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    • 2011
  • The present paper addresses the nonlinear response of a FG square plate with two smart layers as a sensor and actuator under pressure. Geometric nonlinearity was considered in the strain-displacement relation based on the Von-Karman assumption. All the mechanical and electrical properties except Poisson's ratio can vary continuously along the thickness of the plate based on a power function. Electric potential was assumed as a quadratic function along the thickness direction and trigonometric function along the planar coordinate. By evaluating the mechanical and electrical energy, the total energy equation can be minimized with respect to amplitude of displacements and electrical potential. The effect of non homogenous index was investigated on the responses of the system. Obtained results indicate that with increasing the non homogenous index, the displacements and electric potential tend to an asymptotic value. Displacements and electric potential can be presented in terms of planar coordinate system. A linear analysis was employed and then the achieved results are compared with those results that are obtained using the nonlinear analysis. The effect of the geometric nonlinearity is investigated by using the comparison between the linear and nonlinear results. Displacement-load and potential-load curves verified the necessity of a nonlinear analysis rather than a linear analysis. Improvement of the previous results (by the linear analysis) through employing a nonlinear analysis can be presented as novelty of this study.

Studying the nonlinear behavior of the functionally graded annular plates with piezoelectric layers as a sensor and actuator under normal pressure

  • Arefi, M.;Rahimi, G.H.
    • Smart Structures and Systems
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    • v.9 no.2
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    • pp.127-143
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    • 2012
  • The present paper deals with the nonlinear analysis of the functionally graded piezoelectric (FGP) annular plate with two smart layers as sensor and actuator. The normal pressure is applied on the plate. The geometric nonlinearity is considered in the strain-displacement equations based on Von-Karman assumption. The problem is symmetric due to symmetric loading, boundary conditions and material properties. The radial and transverse displacements are supposed as two dominant components of displacement. The constitutive equations are derived for two sections of the plate, individually. Total energy of the system is evaluated for elastic solid and piezoelectric sections in terms of two components of displacement and electric potential. The response of the system can be obtained using minimization of the energy of system with respect to amplitude of displacements and electric potential. The distribution of all material properties is considered as power function along the thickness direction. Displacement-load and electric potential-load curves verify the nonlinearity nature of the problem. The response of the linear analysis is investigated and compared with those results obtained using the nonlinear analysis. This comparison justifies the necessity of a nonlinear analysis. The distribution of the displacements and electric potential in terms of non homogenous index indicates that these curves converge for small value of piezoelectric thickness with respect to elastic solid thickness.

Fabrication of a silicon pressure sensor for measuring low pressure using ICP-RIE (ICP-RIE를 이용한 저압용 실리콘 압력센서 제작)

  • Lee, Young-Tae;Takao, Hidekuni;Ishida, Makoto
    • Journal of Sensor Science and Technology
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    • v.16 no.2
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    • pp.126-131
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    • 2007
  • In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.

Characteristics silicon pressure sensor using dry etching technology (건식식각 기술 이용한 실리콘 압력센서의 특성)

  • Woo, Dong-Kyun;Lee, Kyung-Il;Kim, Heung-Rak;Suh, Ho-Cheol;Lee, Young-Tae
    • Journal of Sensor Science and Technology
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    • v.19 no.2
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    • pp.137-141
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    • 2010
  • In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

Absolute Strain Measurement Using Fiber Bragg Grating Sensor (광섬유 브래그 격자 센서를 이용한 절대 변형률 측정)

  • ;Lou-shuang
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.10a
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    • pp.416-420
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    • 2002
  • This Paper describes a matched-filter type strain sensor system using optical fiber Bragg grating (FBG) sensor. Matched-filter type uses another wavelength-matched FBG filter to track wavelength shift in the FBG sensor. Filter FBG is attached on a fiber stretcher and stretched by PZT actuator. To overcome the nonlinearity and hysteresis of the PZT actuator that degrades system accuracy, a string resonator which can measure an absolute strain is employed. And the effect of vibration modes on string resonator is investigated particularly regarding its sensitivity and stability.

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Diaphragm-Type Pressure Sensor with Cu-Ni Thin Film Strain Gauges-II : Design Fabrication and Characteristics of a Pressure Sensor (Cu-Ni 박막 스트레인 게이지를 이용한 다이어프램식 압력 센서-II:압력 센서의 설계 제작의 특성)

  • 민남기;전재형;박찬원
    • Electrical & Electronic Materials
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    • v.10 no.10
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    • pp.1022-1028
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    • 1997
  • In this paper we present the construction details and output characteristics of a diaphragm-type pressure sensor with Cu-Ni(53:47) thin-film strain gauges. In order to improve the sensitivity and the temperature compensation two circumferential gauges are placed near the center of the diaphragm and two radial gauges are located near the edge. For all the gauges the relative change in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output is found to be linear over the entire pressure range(0-30kfg/cm$^2$)and the output sensitivity obtained is 1.6mV/V. The maximum nonlinearity observed in output characteristics is 0.35%FS for 5V excitation and the hysteresis is less than 0.1%FS.

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Development of the high-temperature, high-pressure Dynamic pressure sensor with LGT (LGT를 이용한 고온, 고압용 동압 센서 개발)

  • Kwon, Hyuk Jae;Lee, Kyung Il;Kim, Dong Su;Kim, Young Deog;Lee, Young Tae
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.17-21
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    • 2012
  • This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.

Thick-Film Strain-gage Ceramic-Pressure Sensor (세라믹 다이어프램을 이용한 후막 스트레인 게이지 압력센서)

  • 이성재;박하용;민남기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.987-993
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    • 2001
  • In this paper, we presents the construction details and output characteristics of a thick film piezoresistive strain gage. The thick film was printed on the ceramic diaphragm back side by screen printing and cured at 850$^{\circ}C$. The strain distribution and deflection on ceramic diaphragm were performed with finite-element method(FEM tool ANSYS-5.3). Various thick film strain gage characteristics were analysed, including nonlinearity, hysteresis, stability and sensitivity of thick film strain gages.

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Fault detection of chemical process using observer scheme (Observer를 이용한 화학공정의 이상감지)

  • 최용진;오영석;윤인섭
    • 제어로봇시스템학회:학술대회논문집
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    • 1993.10a
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    • pp.589-594
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    • 1993
  • This paper presents a fault detection strategy that discriminates the faulty sensor and that detects the component fault using a bank of observers for the system in which sensor fault and component fault can occur simultaneously. Observers as many as the number of measurements are designed, and each observer uses measurements excluding sequentially one measurement, to estimate the state variables. The faulty sensor can be found out by comparing each state variable from different observer. Next, component fault can be detected by using measurements from the sensors excluding the faulty sensor. The suggested strategy is applied to a nonisothermal, series reaction with unknown reaction kinetics in a CSTR. This strategy is found out to perform well even in the case that the sensor and component fault occur simultaneously. Since each observer is designed to be independent of reaction kinetics, this strategy is not affected by the model uncertainty and nonlinearity of the reaction kinetics.

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