• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.166-168
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• 2003

By using gain saturation of semiconductor optical amplifiers (SOAs), an all-optical AND gate at 10 Gb/s has been successfully demonstrated. Firstly, Boolean (equation omitted) has been obtained using the first SOA with signal B and clock injection. Then, the all-optical AND gate is achieved using the second SOA with signals A and (equation omitted) injection.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.170-171
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• 2001

차세대 광 인터넷 시스템을 구축하는 데 있어서 패킷을 광신호 상태에서 라우팅하기 위한 전광 교환 방식에 대한 연구가 최근 관심을 끌고 있다. 전광 패킷 라우팅모듈을 구현하는 데 있어서 파장변환 기술은 필수적이며 여러 가지 형태에 대한 연구개발이 진행되고 있다. 최근에는 반도체 광 증폭기로 형성된 방향성 결합기 구조(semiconductor optical amplifier directional coupler)에서의 상호위상변조(XPM ： cross-phase modulation)에 의한 파장변환에 대한 개념이 제안되고 가능성이 실험적으로 입증된 바 있다. (중략)

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.312-313
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• 2004

The optical gain saturation and noise figure characteristics of 1550nm traveling-wave semiconductor optical amplifiers are analyzed experimentally and theoretically. The result shows that there is an optimum active layer thickness for high saturation output power and low noise figure.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.293-294
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• 2008

Using bi-direction SOA based Extension system, FTTH can enhance PON system by increasing both the upstream and downstream link budget. This increased link budget can be used to extend the distance, increase the split ratio or both. The bi-direction SOA regenerates signals using all-optical amplification, and is therefore transparent to data rate or protocol. The bi-direction SOA supports legacy as well as future FTTx standards. This is based on SOA's proprietary technology platform for the manufacturing of advanced discrete photonics and photonic integrated circuits (PICs). Because the bi-direction SOA uses the same InP semiconductor technology used in virtually all telecom lasers, it is able to amplify signals at 1310 and 1490 nm, wavelengths not accessible with commercial fiber-amplifier (EDFA) technology. Due to the extremely fast response time of the InP semiconductor optical amplifiers inside, the SOA can accommodate both continuous (downstream) and bursty (upstream) traffic.

• Current Optics and Photonics
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• v.2 no.1
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• pp.27-33
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• 2018

We report the physical implementation of a tunable photonic microwave delay line filter based on injection locking of a single Fabry-Perot laser diode (FP-LD) to a reflective semiconductor optical amplifier (RSOA). The laser generates equally spaced multiple wavelengths and a single tapped-delay line can be obtained with a dispersive single mode fiber. The filter frequency response depends on the wavelength spacing and can be tuned by the temperature of the FP-LD varying lasing wavelength. For amplitude control of the wavelengths, we use gain saturation of the RSOA and the offset between the peak wavelengths of the FP-LD and the RSOA to decrease the amplitude difference in the wavelengths. From the temperature change of total $15^{\circ}C$, the filter, consisting of four flat wavelengths and two wavelengths with slightly lower amplitudes on both sides, has shown tunability of about 390 MHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.443-450
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• 2014

This paper presents a 20-Gb/s optical receiver circuit fabricated with standard 65-nm CMOS technology. Our receiver circuits are designed with consideration for parasitic inductance and capacitance due to bonding wires connecting the photodetector and the circuit realized separately. Such parasitic inductance and capacitance usually disturb the high-speed performance but, with careful circuit design, we achieve optimized wide and flat response. The receiver circuit is composed of a transimpedance amplifier (TIA) with a DC-balancing buffer, a post amplifier (PA), and an output buffer. The TIA is designed in the shunt-feedback configuration with inductive peaking. The PA is composed of a 6-stage differential amplifier having interleaved active feedback. The receiver circuit is mounted on a FR4 PCB and wire-bonded to an equivalent circuit that emulates a photodetector. The measured transimpedance gain and 3-dB bandwidth of our optical receiver circuit is 84 $dB{\Omega}$ and 12 GHz, respectively. 20-Gb/s $2^{31}-1$ electrical pseudo-random bit sequence data are successfully received with the bit-error rate less than $10^{-12}$. The receiver circuit has chip area of $0.5mm{\times}0.44mm$ and it consumes excluding the output buffer 84 mW with 1.2-V supply voltage.

• ETRI Journal
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• v.29 no.5
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• pp.633-640
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• 2007

We report an experimental demonstration of 40 Gbps all-optical 3R regeneration with all-optical clock recovery based on InP semiconductor devices. We also obtain alloptical non-return-to-zero to return-to-zero (NRZ-to-RZ) format conversion using the recovered clock signal at 10 Gbps and 40 Gbps. It leads to a good performance using a Mach-Zehnder interferometric wavelength converter and a self-pulsating laser diode (LD). The self-pulsating LD serves a recovered clock, which has an rms timing jitter as low as sub-picosecond. In the case of 3R regeneration of RZ data, we achieve a 1.0 dB power penalty at $10^{-9}$ BER after demultiplexing 40 Gbps to 10 Gbps with an eletroabsorption modulator. The regenerated 3R data shows stable error-free operation with no BER floor for all channels. The combination of these functional devices provides all-optical 3R regeneration with NRZ-to-RZ conversion.

• Journal of IKEEE
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• v.11 no.3
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• pp.117-121
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• 2007

20 GHz and 40 GHz micro/millimeter-wave photonic pulse trains have been generated from a fiber ring laser with a semiconductor optical amplifier (SOA) by injecting 2 GHz gain-switched Fabry-Perot laser diode (GS-FPLD) output. To achieve efficient cross-gain modulation in the SOA at 20 GHz and 40 GHz, individual lasing modes of the 2 GHz GS-FPLD output separated to 25 and 50 picoseconds respectively by passing dispersion compensating fibers.

• Journal of the Optical Society of Korea
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• v.5 no.1
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• pp.5-8
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• 2001

In this work, we studied the effect of chirped grating on optical bistability in λ/4-shifted semiconductor distributed-feedback(DFB) devices, such as an etalon with nonlinear mirrors, a λ/4-shifted DFB waveguide and aλ/4-shifted DFB laser amplifier. We found that chirped DFB devices exhibit bistable switching at a lower input power.OCIS code : 050.2770, 190.1450, 190.5970, 230.0230.

• Journal of the Optical Society of Korea
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• v.17 no.2
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• pp.117-129
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• 2013

We briefly review the recent progress in passively mode-locked fiber lasers (PMLFLs) based on semiconductor saturable absorber mirrors (SESAMs) and discuss the detailed characterization of a SESAM-based, passively mode-locked erbium-doped fiber (EDF) laser operating in the 1.5-${\mu}m$ spectral range for various configurations. A simple and compact design of the laser cavity enables the PMLFL to generate either femtosecond or wavelength-tunable picosecond pulses with high stability as the intra-cavity filtering method is altered. All the cavities investigated in our experiments present self-starting, continuous-wave mode-locking with no Q-switching instabilities. The excellent stability of the source eventually enables the wavelength-tunable PMLFL to be used as a master oscillator for a power-amplifier source based on a large-core EDF, generating picosecond pulses of >10-kW peak power and >100-nJ pulse energy.