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10 Gb/s all optical AND gate by using semiconductor optical amplifiers

반도체 광증폭기를 이용한 10 Gb/s 전광 AND논리소자

  • 김재헌 (한국과학기술연구원, 광기술연구센터) ;
  • 김병채 (한국과학기술연구원, 광기술연구센터) ;
  • 변영태 (한국과학기술연구원, 광기술연구센터) ;
  • 전영민 (한국과학기술연구원, 광기술연구센터) ;
  • 이석 (한국과학기술연구원, 광기술연구센터) ;
  • 우덕하 (한국과학기술연구원, 광기술연구센터) ;
  • 김선호 (한국과학기술연구원, 광기술연구센터)
  • Published : 2003.04.01

Abstract

By using gain saturation of semiconductor optical amplifiers (SOAs), an all-optical AND gate at 10 Gb/s has been successfully demonstrated. Firstly, Boolean (equation omitted) has been obtained using the first SOA with signal B and clock injection. Then, the all-optical AND gate is achieved using the second SOA with signals A and (equation omitted) injection.

반도체 광증폭기의 이득포화원리를 이용한 전광 AND논리소자가 10 Gb/s에서 처음으로 구현되었다. 먼저 첫 번째 반도체 광증폭기에 B 신호를 입력시켜 반전된 신호인 Boolean (equation omitted)이 얻어졌다. 이와 같이 반전된 신호는 두 번째 반도체 광증폭기에 A신호와 함께 동시 입력되어 AND논리소자의 특성이 얻어졌다.

Keywords

References

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