• ETRI Journal
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• v.38 no.4
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• pp.665-674
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• 2016

We designed and fabricated a semiconductor optical amplifier-integrated dual-mode laser (SOA-DML) as a compact and widely tunable continuous-wave terahertz (CW THz) beat source, and a pin-photodiode (pin-PD) integrated with a log-periodic planar antenna as a CW THz emitter. The SOA-DML chip consists of two distributed feedback lasers, a phase section for a tunable beat source, an amplifier, and a tapered spot-size converter for high output power and fiber-coupling efficiency. The SOA-DML module exhibits an output power of more than 15 dBm and clear four-wave mixing throughout the entire tuning range. Using integrated micro-heaters, we were able to tune the optical beat frequency from 380 GHz to 1,120 GHz. In addition, the effect of benzocyclobutene polymer in the antenna design of a pin-PD was considered. Furthermore, a dual active photodiode (PD) for high output power was designed, resulting in a 1.7-fold increase in efficiency compared with a single active PD at 220 GHz. Finally, herein we successfully show the feasibility of the CW THz system by demonstrating THz frequency-domain spectroscopy of an ${\alpha}$-lactose pellet using the modularized SOA-DML and a PD emitter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.189-195
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• 2004

A 10 Gb/s limiting amplifier IC with the emitter area of $1.5{\times}10{\mu}m^2$ for optical transmission system was designed and fabricated with a AIGaAs/GaAs HBTs technology. In this stud)', we evaluated fine pitch bump using WL-CSP (Wafer Level-Chip Scale Packaging) instead of conventional wire bonding for interconnection. For this we developed WL-CSP process and formed fine pitch solder bump with the $40{\mu}m$ diameter and $100{\mu}m$ pitch on bonding pad. To study the effect of WL-CSP, electrical performance was measured and analyzed in wafer and package module using WL-CSP. In a package module, clear and wide eye diagram openings were observed and the riselfall times were about 100ps, and the output" oltage swing was limited to $600mV_{p-p}$ with input voltage ranging from 50 to 500m V. The Small signal gains in wafer and package module were 15.56dB and 14.99dB respectively. It was found that the difference of small signal gain in wafer and package module was less then 0.57dB up to 10GHz and the characteristics of return loss was improved by 5dB in package module. This is due to the short interconnection length by WL-CSP. So, WL-CSP process can be used for millimeter wave GaAs MMIC with the fine pitch pad.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1393-1397
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• 2009

A high-speed wavelength swept laser, which is based on oscillation characteristics of a fiber Fabry-Perot tunable filter, is described. The laser is constructed by using a semiconductor optical amplifier, a fiber Fabry-Perot tunable filter, and 3.348 km fiber ring cavity. The wavelength sweeps are repeatatively generated with the repetition period of 61 kHz which is the first parallel oscillation frequency of the Fabry-Perot tunable filter for the low power consumption. Mode-locking is implemented by 3.348 km fiber ring cavity for matching the fundamental of cavity roundtrip time to the sweep period. The wavelength tuning range of the laser is 87 nm(FWHM) and the average output power is 1.284 mW.

• The Journal of Engineering Research
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• v.3 no.1
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• pp.171-180
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• 1998

The low cost fiber ring laser can be tuned by controlling polarization states within the loop. In this paper, we investigate its operating principle and verify the performance through an experiment. This ring laser consists of a polarization controller and an intracavity polarizer for the wavelength tuner and semiconductor optical amplifier for the gain medium. It is seen that the lasing wavelength may be tuned through the range of 1540~1560 nm as a polarization controller and a polarizer are adjusted.

• Journal of the Optical Society of Korea
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• v.15 no.3
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• pp.293-299
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• 2011

In this study, we demonstrated Fourier-domain/swept-source optical coherence tomography (FD/SS-OCT) at a center wavelength of 800 nm for in vivo human retinal imaging. A wavelength-swept source was constructed with a semiconductor optical amplifier, a fiber Fabry-Perot tunable filter, isolators, and a fiber coupler in a ring cavity. Our swept source produced a laser output with a tuning range of 42 nm (779 to 821 nm) and an average power of 3.9 mW. The wavelength-swept speed in this configuration with bidirectionality is 2,000 axial scans per second. In addition, we suggested a modified zero-crossing method to achieve equal sample spacing in the wavenumber (k) domain and to increase the image depth range. FD/SS-OCT has a sensitivity of ~89.7 dB and an axial resolution of 10.4 ${\mu}m$ in air. When a retinal image with 2,000 A-lines/frame is obtained, an acquisition speed of 2.0 fps is achieved.

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.219-223
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• 2008

To realize a widely tunable laser diode, a polymer coupled-ring reflector is hybrid- integrated with reflective semiconductor optical amplifier. Even though ring-ring and ring-bus coupling ratios are changed by fabrication errors in waveguide width and height, they remain very close to the single peak condition, ensuring high yield in fabrication. The tuning range is observed to be about 35 nm, maintaining the side mode suppression ratio of about 30 dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.35-44
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• 2006

Reflective semiconductor optical amplifiers(R-SOAs) were designed with high gain, wide optical bandwidth, high thermal reliability and wide modulation bandwidth in TO-can package for the transmitter of wavelength division multiplexed-passive optical network(WDM-PON) application. Double trench structure and current block layer were introduced in designing the active layer of R-SOA to enable high speed modulation. The injection power requirement and the viable temperature range of WDM-PON system are experimentally analysed in based on Amplified Spontaneous Emission(ASE)-injected R-SOAs. The effect of the different injection spectrum in the gain-saturated R-SOA was experimentally characterized based on the measurements of excessive intensity noise, Q factor, and BER. The proposed spectral pre-composition method reduces the bandwidth of injection source below the AWG bandwidth and thereby avoids spectrum distortion impeding the intensity noise reduction originated from the amplitude squeezing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.1-9
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• 2006

In this paper, a couple of 10Gb/s transimpedance amplifiers are realized in a 0.18um standard CMOS technology for optical communication applications. First, the voltage-mode inverter TIA(I-TIA) exploits inverter input configuration to achieve larger effective gm, thus reducing the input impedance and increasing the bandwidth. I-TIA demonstrates $56dB{\Omega}$ transimpedance gain, 14GHz bandwidth for 0.25pF photodiode capacitance, and -16.5dBm optical sensitivity for 0.5A/W responsivity, 9dB extinction ration and $10^{-12}$ BER. However, both its inherent parasitic capacitance and the package parasitics deteriorate the bandwidth significantly, thus mandating very judicious circuit design. Meanwhile, the current-mode RGC TIA incorporates the regulated cascade input configuration, and thus isolates the large input parasitic capacitance from the bandwidth determination more effectively than the voltage-mode TIA. Also, the parasitic components give much less impact on its bandwidth. RGC TIA provides $60dB{\Omega}$ transimpedance gain, 10GHz bandwidth for 0.25pF photodiode capacitance, and -15.7dBm optical sensitivity for 0.5A/W responsivity, 9dB extinction ration and $10^{-12}$ BER. Main drawback is the power dissipation which is 4.5 times larger than the I-TIA.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.1
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• pp.123-128
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• 2010

We have investigated the properties of the novel triangular ring resonator with the total internal reflection mirrors and the semiconductor optical amplifier for photonic integrated circuits (PIC). A novel triangular resonators containing active and passive sections are fabricated and characterized with various multimode interference (MMI) lengths. The optimum MMI length and width turn out to be 108 and 9 ${\mu}m$, respectively. A free spectral range of approximately 228 GHz is observed near 1558 nm along with an on-off ratio of 9 dB. The proposed triangular resonator has a good advantage to remove the direct coupling between the two access waveguides of the MMI coupler. Hence, such resonators can be directly integrated with other devices making compact and highly functional PIC possible.

• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.198-203
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• 1990

In this paper, a system has been proposed for the measurement of the spectral characteristic of semiconductor light sources driven by very short pulse currents. This system has been constituted a monochrometer of 600 groovedmm grating and of 275 mm focal length, X-Y recorder, scanning motor which enables the system to get the analog data, and amplifier coupled with peak detector. Especially, peak detector was used to convert the short pulse signal to continuous one. In order to verify the resolution with slit width, several slits were made by the hands. By using this system, the spectra of commercial LEDs, AlGaAdGaAs LD, and InGaAsPIInP BH-LD which were driven with pulse current (duty cy$e = 0.01) were measured. From these measurements, it has been shown that the proposed system has about 1 A1$\AA$ resolution and 10$\mu$W sensitivity.