• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.276.2-278
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• 2000

In a recent years, a number of approaches have been studied, including passive, active, and hybrid mode-locking of semi-conductor lasers for short pulse generation and research has been devoted to achieve low timing-jitter operation since the timing jitter is unfavorable for system applications. Among the methods of mode locking, passive mode locking does not need external rf drives, and therefore the operation and fabrication procedures are simplified. In spite of these attractive advantages of passive mode-locked laser, it has critical drawbacks such as large timing jitter and the difficulty in synchronization with external circuits. Their inherent large timing jitter value was shown to be suppressed to certain levels by means of hybrid mode-locking technique$^{(1)}$ , where the saturable absorber section was modulated by an external signal with the cavity round trip frequency. Furthermore, the subharmonic mode-locking (SHML) technique alleviates the restrictions of high speed driving electronics. It has been demonstrated experimentally$^{(1)}$ that the hybrid subharmonic mode-locking technique has lead to significant reduction of the timing jitter. (omitted)

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.6
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• pp.834-840
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• 2010

Photo lithography process is very important technology to fabricate highly integrated micro patterns with high precision for semiconductor and display industries. Up to now, mask type lithography process has been generally used for this purpose; however, it is not efficient for small quantity and/or frequently changing products. Therefore, in order to obtain higher productivity and lower manufacturing cost, the mask type lithography process should be replaced. In this study, a maskless lithography system using the DMD(Digital Micromirror Device) is developed, and the exposure condition and optical properties are analyzed and simulated for a single beam case. From the proposed experimental conditions, required exposure experiments were preformed, and the results were investigated. As a results, 10${\mu}m$ spots can be generated at optimal focal length.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.331-332
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• 2006

Transport systems which are the important part of the factory automation have much influence on improving productivity. Object transport systems are driven typically by the magnetic field and conveyer belt. In recent years, as the transmission and processing of information is required more quickly, demands of optical elements and semiconductors increase. However, conventional transport systems are not adequate for transportation of those. The reason is that conveyor belts can damage precision optical elements by the contact force and magnetic systems can destroy the inner structure of semiconductor by the magnetic field. In this paper, the levitation transport system using ultrasonic wave is developed for transporting precision elements without damages. Vibration modes of each flexural beam are verified by using Laser Scanning Vibrometer.

• Applied Microscopy
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• v.41 no.2
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• pp.89-98
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• 2011

Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.

• Journal of Magnetics
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• v.12 no.4
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• pp.144-148
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• 2007

We report on the observation of p-type conductivity and ferromagnetism in diluted magnetic semiconductor $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films grown on $SiO_2/Si$ substrates by pulsed laser deposition. The p-type conduction with hole concentration over $10^{18}cm^{-3}$ is obtained by codoping of Mg and P followed by rapid thermal annealing in an $O_2$ atmosphere. Structural and compositional analyses for the p-type $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films annealed at $800^{\circ}C$ indicates that highly c-axis oriented homogeneous films were grown without any detectable formation of secondary phases. The films were found to be transparent in the visible range. The magnetic measurements clearly revealed an enhancement of room temperature ferromagnetism by p-type doping.

• Journal of Magnetics
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• v.13 no.3
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• pp.88-91
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• 2008

This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped $In_2O_3$ thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped $In_2O_3$ film, which may have applications in transparent oxide semiconductor spin electronics devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.4
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• pp.28-39
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• 1993

In the international BISDN used satellite, the laser that has large BW has to be used as a carrier for transmitting a lot of visual, vocal, and data information. Interoptical satellite communication has now developed in theoretical and practical aspects. But the optical communication, between satellite and earth station, is hindered by atmospheric absorption, scattering, and turbulence. In this paper, it was supposed that 1Gbps information was transmitted by binary FSK and 50mW AlGaAs semiconductor laser was used as a optical source in the satellite communication link between geosynchronous orbit satellite and earth station. We analyzed the BER and the entire diameter of the noncoherently combined optical heterodyne receiver as el evation angle, and determined the number of the optical heterodyne rece ivers, which is necessary for the BER of the receiver to be less than 10$^{-9}$ by computer simulation under the clear weather condition. It is shown that the BER and the number of the optical heterodyne receivers decrease as the elevation angle increases. In the region used the same number of the optical heterodyne receivers, it is shown that the entire diameter of the receiver increases but the BER decreases as the elevation angle increases.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.572-579
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• 2003

By comparing the measured optical reflection spectra with calculated one by the transfer-matrix method (TMM) in epitaxial wafers for vertical-cavity surface-emitting lasers (VCSELs), we have estimated the systematic thickness errors in a simple and nondestructive way. The experimentally confirmed technique is based on the finding that the shape of the reflection spectra depends mainly on a newly defined single parameter, the effective error in the n-mirror layers, and the thickness error in the active cavity simply shifts the Fabry-Perot resonance wavelength. Also shown is that the proposed method is reliable when the relative standard deviation of the random thickness errors is less than 0.005. Because reflection spectra are routinely measured, we can easily estimate the thickness errors nondestructively with high spatial resolution.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.45-50
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• 2004

The characteristics and reliability of implanted VCSELs are greatly influenced by the thickness of the semi-insulating layer made by ion implantation for the current confinement. We propose a simple and purely electrical method of estimating the optimum implant depth, and find that the implant front should be located 2-DBR periods above the 1 - λ cavity in order to obtain simultaneously the low threshold current and high reliability.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.