• 한국정보통신학회논문지
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• 제10권2호
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• pp.224-227
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• 2006

809nm의 고출력 반도체 레이저(500mV의 출력광과 LD(Laser Diode) 여기 Nd:YVO4레이저의 파장 1064nm를 공진기 내부에서 비선형 광학 소자 KTP(Potassium titanyl posphate : KTPiOPO4)를 사용하여 합주파 발생 파장인 459nm의 청색레이저를 얻었다. 제2의 위상 정합 정합조건(${\psi}=90^{\circ},\;{\theta}=90^{\circ}$)에서 반도체 레이저의 입력광 세기가400mW일 때 청색레이저의 최대 출력 0.95mW를 얻었으며, 청색레이저의 발진문턱입력 세기는 120mW이었다.

• 한국광학회지
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• 제8권1호
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• pp.47-51
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• 1997

반도체 레이저에 의해 펌핑되는 Cr:LiSAF 레이저를 제작하였다. 펌핑 레이저는 고출력의 반도체 레이저 (SDL 7432-H1)였으며, 674 nm에서 최대출력은 500 mW이었다. 레이저 결정은 plano-Brewster모양의 Cr:LiSAF으로 Cr$^{3+}$ 의 농도가 3%, 길이가 3 mm, 결정의 평면인 면은 펌프레이저를 최대로 투과하고, 800-880 nm 대역에서 최대 반사율을 갖도록 코팅된 것을 사용하였다. 결정에 의한 비점수차를 보정하기 위해 V자형 공진기를 사용하였다. 펌핑 레이저의 출력이 290 nW일 때 Cr:LiSAF 레이저의 출력은 19.4 mW이었다. 광축의 각이 큰 복굴절 필터를 사용하여 레이저 파장을 840-880 nm파장 범위에서 가변할 수 있었으며, 복굴절 필터의 특성은 이론과 잘 일치하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1980-1981
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• 1996

Laser direct dry etching is a new technique in semiconductor processing which has a lot of advantage, including decrease of etching-induced damage, maskless, photoresistiess, and high selectivity. This study presents characteristics of a laser direct dry etching for $Al_{0.3}Ga_{0.7}As/GaAs$ multi-layer structures for the first time. In this study, we were able to obtain the unusual aching profiles. The cross sectional analysis of etched groove was peformed for reaction characteristics and their applications.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2000년도 추계학술발표대회 논문개요집
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• pp.0-0
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• 2000

• Journal of the Optical Society of Korea
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• 제17권2호
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• pp.117-129
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• 2013

We briefly review the recent progress in passively mode-locked fiber lasers (PMLFLs) based on semiconductor saturable absorber mirrors (SESAMs) and discuss the detailed characterization of a SESAM-based, passively mode-locked erbium-doped fiber (EDF) laser operating in the 1.5-${\mu}m$ spectral range for various configurations. A simple and compact design of the laser cavity enables the PMLFL to generate either femtosecond or wavelength-tunable picosecond pulses with high stability as the intra-cavity filtering method is altered. All the cavities investigated in our experiments present self-starting, continuous-wave mode-locking with no Q-switching instabilities. The excellent stability of the source eventually enables the wavelength-tunable PMLFL to be used as a master oscillator for a power-amplifier source based on a large-core EDF, generating picosecond pulses of >10-kW peak power and >100-nJ pulse energy.

• 전기전자학회논문지
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• 제18권1호
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• pp.19-24
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• 2014

We report stable, wideband, flat-topped, 10 GHz optical frequency comb generation from a semiconductor-based mode-locked ring laser with an intra-cavity high finesse Fabry-Perot etalon. We demonstrate a stable 10 GHz comb with greater than 200 lines within a spectral power variation below 1 dB, which is the largest value obtained from a similar mode-locked laser in our knowledge. Greater than 20 dB of the spectral peak to deep ratio at 0.02 nm resolution, ~92 femtosecond timing jitter over 1 kHz to 1 MHz range, and non-averaged time traces of pulses confirm very stable optical frequency comb lines.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.1-6
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• 2022

This computational investigation of micro-sized particle dispersion concerns the fume particle contamination over target surface in high-precision laser line machining process of semiconductor and display device materials. Employing the random sampling based on probabilistic fume particle generation distributions, the effects of sphericity for nonspherical fume particles are analyzed for the fume particle dispersion and contamination near the laser machining line. The drag coefficient correlation for nonspherical particles in a low Reynolds number regime is selected and utilized for particle trajectory simulations after drag model validation. When compared to the corresponding results by the assumption of spherical fume particles, the sphericity of nonspherical fume particles show much less dispersion and contamination characteristics and it also significantly affects the particle removal rate in a suction air flow patterns.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.72-76
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• 2019

A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO₄, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

• 한국정보통신학회논문지
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• 제15권3호
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• pp.654-659
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• 2011

반도체 레이저의 직접 변조 시에 발생하는 레이저의 주파수 처핑(chirping) 현상을 감소시켜 직접 변조를 하는 레이저 다이오드의 변조 특성을 향상시키기 위하여 이중 전극을 가진 구조의 반도체 레이저를 제안하였다. 이중 전극 레이저는 일반적인 측면 방출형 반도체 레이저와 달리 하나의 광이득 매질에 대하여 전기적으로 전극을 분리한 구조이다. 본 논문에서는 이중 전극 구조의 반도체 레이저를 이용하여 직접 변조시 발생하는 처핑(chirping)과 이에 따른 광신호의 선폭을 감소시킴으로써 단일 전극 구조의 레이저 다이오드와 비교하여 10-Gbps NRZ(non-return-to zero) 신호의 80-km 광전송에 대하여 2.5 dB의 광링크 수신감도 향상을 달성하였다.