• Title/Summary/Keyword: semiconductor image

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System-level Function and Architecture Codesign for Optimization of MPEG Encoder

  • Choi, Jin-Ku;Togawa, Nozomu;Yanagisawa, Masao;Ohtsuki, Tatsuo
    • Proceedings of the IEEK Conference
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    • 2002.07c
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    • pp.1736-1739
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    • 2002
  • The advanced in semiconductor, hardware, and software technologies enables the integration of more com- plex systems and the increasing design complexity. As system design complexity becomes more complicated, System-level design based on the If block and processor model is more needed in most of the RTL level or low level. In this paper, we present a novel approach fur the system-level design, which satisfies the various required constraints and an optimization method of image encoder based on codesign of function, algorithm, and architecture. In addition, we show an MPEG-4 encoder as a design case study. The best tradeoffs between algorithm and architecture are necessary to deliver the design with satisfying performance and area constraints. The evaluations provide the effective optimization of motion estimation, which is in charge of an amount of performance in the MPEG-4 encoder module.

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The Capacitance Properities of DLPC Liquid Membrance Fabricatied by LB Method (LB법에 의해서 제작된 DLPC 지질막의 캐패시턴스 특성)

  • 정용호;이우선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.8
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    • pp.628-636
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    • 1998
  • LB layers L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multiayers was determined by ellipsometry. Ut was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitiance and low lekage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLD capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

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Sensitivity Improvement Method for Color Capture Device At Low Illumination Conditions (Color Capture Device의 저조도 감도 향상 방안)

  • Kim, Il-Do;Jun, Jae-Sung;Choi, Byung-Sun;Park, Sahng-Gyu
    • Proceedings of the IEEK Conference
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    • 2007.07a
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    • pp.235-236
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    • 2007
  • CCD(Charge-Coupled Device) 혹은 CMOS (Complementary Metal Oxide Semiconductor)와 같은 소자를 이용하여 빛을 전기적 신호인 Image로 재구성하는 촬상소자(Color Capture Device)는 촬영환경이 어두워지면 Dynamic Range가 작아지고, Noise가 상대적으로 심해진다[1][2]. 본 논문에서는 촬영 환경이 어두울 때, Resolution을 Preserving하는 Pixel Pitch가 큰 촬상 소자와 Motion Blur를 억제하는 Exposure Time이 긴 촬상 소자의 조합을 신호처리로 구현하여, 신호의 Power를 향상시켜 Dynamic Range를 키우고 Noise의 Boost-up을 억제하여 SNR(Signal to Noise Ratio)을 향상시키는 방식으로, 촬상 장치의 감도를 향상시켜 화질을 개선하는 방법을 제안한다.

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Amplitude Filter와 Phase Filter가 결합된 광학계의 결상특성

  • 박성종;이종진;정창섭
    • Korean Journal of Optics and Photonics
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    • v.4 no.1
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    • pp.9-14
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    • 1993
  • We chose Bessel beamu[$J_o(ar)}$)l in order to investigate image forming property of the optical system with combined filter of amplitude and phase(CFAP). This paper investigated numerically the influence of number of nodes of these beams on the PSF, encircled energy(E), transmission ratio(TR), gain((;) for an aberrated(1aberration-free) optical system. These results showed that the property of PSF differ considerably from the one of the existing amplitude filter and that Bessel beam has super compensating effect for an optical system with spherical aberration. Particularly, the Bessel beam has less the size of central spot than the radius of Airy disk, this result can therefore be applied to the fabrication of semiconductor device.

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Precision Profile Measurement of Mirror Surfaces by Phase Shifting Interferometry (광위상간섭에 의한 경면의 정밀 형상측정)

  • 김승우;공인복;민선규
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.16 no.8
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    • pp.1530-1535
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    • 1992
  • An optical method of phase shifting interferometry is presented for the 3-dimensional profile measurement of mirror surfaces with nanometer resolution. A series of optical interferometric fringes are generated by comparing the surface to be measured with a reference flat. The fringes are captured by a CCD camera and then analyzed to obtain actual surface profile. Detailed principles are described along with necessary image processing algorithms. finally, several measurement examples are discussed which were performed on lapped surfaces, hard discs, and semiconductor wafers.

A Study on the Pixel-Parallel Image Processing Using the Format Converter. (포맷 변환기를 이용한 화소-병렬 영상처리에 관한 연구)

  • Kim, Hyun-Gi;Lee, Young-Hee;Lee, Cheon-Hee
    • Proceedings of the Korea Information Processing Society Conference
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    • 2001.10a
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    • pp.645-648
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    • 2001
  • 본 논문에서는 포맷 변환기를 사용하여 여러 가지 영상처리 필터링을 구현하였다. 이러한 설계기법은 집적회로를 이용한 대규모 화소처리배열을 근거로 하여 실현하였다. 집적구조의 두가지 형태는 연산병렬프로세서와 병렬 프로세스 DRAM(또는 SRAM) 셀로 분류할 수 있다. 이러한 포맷 변환기 설계는 효율적인 제어 경로 수행을 능력을 가지고 있으며 하드웨어를 복잡하게 한 필요 없이 고급 기술로 사용 될 수 있다. 실험 결과 1)단순한 평활화는 더 높은 공간의 주파수를 억제하면서 잡음을 감소시킬 뿐 아니라 에지를 흐리게 할 수 있으며, 2) 평활화와 분할 과정은 날카로운 에지를 보존하면서 잡음을 감소시키고, 3) 평활화와 분할과 같은 메디안 필터링기법은 영상 잡음을 줄이기 위해 적용될 수 있고 날카로운 에지는 유지하면서 스파이크 성분을 제거하고 화소 값에서 단조로운 변화를 유지 할 수 있었다.

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The Implementation of A Therapy Radiation Dose Measurement System Using A Microcomputer (마이크로컴퓨터를 이용한 치료방사선 선량측정 시스템의 구현)

  • Lee, D.H.;Kwon, O.S.;Hong, J.P.;Chae, C.S.;Hong, S.H.
    • Proceedings of the KOSOMBE Conference
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    • v.1996 no.11
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    • pp.15-17
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    • 1996
  • In this paper, the therapy radiation dose measurement system has been implemented by using a microcomputer after radiation was irradiated on diodes from the MM22 microtron accelerator. We have displayed 7-channel diode output values on the LCD after processing those in the 80196 MCU(Micro Computer Unit). Signal processing has been performed in the pulse mode because we can process the signal fast and use it to perform portal image by increasing a number of diode channels in the future. In order to verify the microcomputer based radiation measurement system of diodes, diode output values were compared with that of semiconductor.

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A Study on Amorphous Silicon Film Deposition by Laser CVD (Laser CVD에 의한 비정질 실리콘 박막 형성에 관한 연구)

  • Yoo, H.S.;Park, G.Y.;Ryou, J.H.;Cho, T.H.;Kim, J.H.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1277-1279
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    • 1993
  • As a highly information-oriented society developes, various kinds of amorphous semiconductor devices, such as solar cells, electrographic printers, image sensors, and flat-panel televisions, have been developed as man/machine interfaces. This paper proposed the laser CVD techniques to deposit hydrogenated amorphous silicon thin film on glass or dielectric substrate at low temperatures. Varying the deposition conditions, we examined optical and electrical charateristics of a-Si:H film deposited by Laser CVD.

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A Non-contact Shape Measuring System Using an Artificial Neural Network

  • Jeong, Woo-tae;Lee, Myung-Chan;Koh, Duck-joon;Cho, Hyung-suck
    • Proceedings of the Korean Nuclear Society Conference
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    • 1996.05a
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    • pp.399-404
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    • 1996
  • We developed a non-contact shape measuring device using computer image processing technology. We present a method of calibrating a CCD video camera and a laser range finder which is the most important step toward making an accurate shape measuring system. An artificial neural network is used for the calibration. Our measurement system is composed of a semiconductor laser. a CCD video camera, a personal computer, and a linear motion table. We think that the developed system could be used for measuring the change in shape of the spent nuclear fuel rod before and after irradiation which is one of the most important tasks for developing a better nuclear fuel. A radiation shield is suggested for the possible utilization of the range finder in radioactive environment.

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Technical Trends in Hyperscale Artificial Intelligence Processors (초거대 인공지능 프로세서 반도체 기술 개발 동향)

  • W. Jeon;C.G. Lyuh
    • Electronics and Telecommunications Trends
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    • v.38 no.5
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    • pp.1-11
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    • 2023
  • The emergence of generative hyperscale artificial intelligence (AI) has enabled new services, such as image-generating AI and conversational AI based on large language models. Such services likely lead to the influx of numerous users, who cannot be handled using conventional AI models. Furthermore, the exponential increase in training data, computations, and high user demand of AI models has led to intensive hardware resource consumption, highlighting the need to develop domain-specific semiconductors for hyperscale AI. In this technical report, we describe development trends in technologies for hyperscale AI processors pursued by domestic and foreign semiconductor companies, such as NVIDIA, Graphcore, Tesla, Google, Meta, SAPEON, FuriosaAI, and Rebellions.