• Title/Summary/Keyword: semiconductor facility

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A Study for Adopting the Temperature Control Unit on Memory Device Tester Based on Principle of Thermoelectric Semiconductor (열전소자 원리를 이용한 부품 Tester용 온도공급 장치 연구 (메모리 Device Tester용 온도제어장치 도입을 위한 연구))

  • Kim, Sun-Ju;Hong, Chul-Ho;Shin, Dong-Uk;Seo, Seong-Bum;Lee, Moo-Jea
    • Proceedings of the KIEE Conference
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    • 2003.11c
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    • pp.414-416
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    • 2003
  • As environmental conditions for memory products are increasingly high speed/high density, adopting diverse system configuration, it's more and more difficult for current component tester to adopt the actual condition of field application. If system test screening is realized in component level, test coverage failure can be made more secured in the initial stage, evaluation cost can be reduced and the effectiveness of investment for the facility can be maximized. Based on the above background, component automatic system tester was developed and showed off satisfactory results per each memory device family. In this paper, component quality stabilization strategy and cost saving for tester investment through future Quality monitoring and application to mass production will be presented.

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Assessment of Occupational Health Risks for Maintenance Work in Fabrication Facilities: Brief Review and Recommendations

  • Dong-Uk Park;Kyung Ehi Zoh;Eun Kyo Jeong;Dong-Hee Koh;Kyong-Hui Lee;Naroo Lee;Kwonchul Ha
    • Safety and Health at Work
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    • v.15 no.1
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    • pp.87-95
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    • 2024
  • Background: This study focuses on assessing occupational risk for the health hazards encountered during maintenance works (MW) in semiconductor fabrication (FAB) facilities. Objectives: The objectives of this study include: 1) identifying the primary health hazards during MW in semiconductor FAB facilities; 2) reviewing the methods used in evaluating the likelihood and severity of health hazards through occupational health risk assessment (OHRA); and 3) suggesting variables for the categorization of likelihood of exposures to health hazards and the severity of health effects associated with MW in FAB facilities. Methods: A literature review was undertaken on OHRA methodology and health hazards resulting from MW in FAB facilities. Based on this review, approaches for categorizing the exposure to health hazards and the severity of health effects related to MW were recommended. Results: Maintenance workers in FAB facilities face exposure to hazards such as debris, machinery entanglement, and airborne particles laden with various chemical components. The level of engineering and administrative control measures is suggested to assess the likelihood of simultaneous chemical and dust exposure. Qualitative key factors for mixed exposure estimation during MW include the presence of safe operational protocols, the use of air-jet machines, the presence and effectiveness of local exhaust ventilation system, chamber post-purge and cooling, and proper respirator use. Using the risk (R) and hazard (H) codes of the Globally Harmonized System alongside carcinogenic, mutagenic, or reprotoxic classifications aid in categorizing health effect severity for OHRA. Conclusion: Further research is needed to apply our proposed variables in OHRA for MW in FAB facilities and subsequently validate the findings.

Risk Evaluation of Scrubber Deposition By-Products in the Diffusion Process (Diffusion 공정 내 스크러버 퇴적 부산물의 위험성 평가)

  • Minji Kim;Jinback Lee;Seungho Jung;Keunwon Lee
    • Journal of the Korean Institute of Gas
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    • v.28 no.2
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    • pp.76-83
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    • 2024
  • In the semiconductor manufacturing process, the Diffusion process generates various reactive by-products. These by-products are deposited inside the pipes of post-processing and exhaust treatment systems, posing a potential risk of substantial dust explosions. In this study, three methods material verification, selection of analysis samples, and risk analysis were employed to address the substances produced during the Diffusion process. Among the materials handled in the Diffusion process, ZrO2, TEOD, and E-DEOS were identified as raw material capable of generating by-product dust. Test for Minimum Ignition Energy and dust explosion were conducted on the by-products collected from each processing facility. The results indicated that, in the case of MIE, none of the by-products ignited. However, the dust explosion test revealed that ZrO2 exhibited a maximum pressure of 7.6 bar and Kst value of 73.3 bar·m/s, its explosive hazard. Consequently, to mitigate such risks in semiconductor processes, it is excessive buildup.

Analysis of Internal Flow and Control Speed for NH3 (Ammonia) Leakage Scenario of ALD Facility (ALD 설비의 NH3(Ammonia)누출 시나리오에 대한 내부유동 및 제어 속도 해석)

  • Lee, Seoung-Sam;An, Hyeong-hwan
    • Journal of the Korean Institute of Gas
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    • v.26 no.5
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    • pp.22-27
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    • 2022
  • Atomic Layer Deposition (ALD) is a facility that deposits an atomic layer on a wafer by causing a chemical reaction after decomposition using heat or plasma by inputting two or more gases during the semiconductor process. The main gas used at this time is NH3 (Ammonia). NH3 has a relatively narrow explosive range with an upper limit (UFL) of 33.6% and a lower limit (LEL) of 15%, but it can explode if a large amount suddenly gathers in one place. It is Velocity and fatal if inhaled or in contact with the skin. NH3 (Ammonia) of ALD (Atomic Layer Deposition) facility is supplied to the chamber through the gas inlet and discharged after the reaction.

Job-specific Questionnaire for Estimating Exposure to Hazardous Agents among Semiconductor Workers (반도체 공정 근로자 직무 노출을 추정하기 위한 설문(Job-specific Questionnaire) 개발)

  • Park, Donguk;Choi, Sangjun;Heo, Jeongin;Roh, Hyunseog;Park, Jihoon;Ha, Kwonchul;Yoon, Chungsik;Kim, Won;Kim, Seungwon;Kim, Hyoungryoul;Kwon, Hojang
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.26 no.1
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    • pp.58-63
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    • 2016
  • Objectives: One major limitation encountered in retrospective exposure assessment for epidemiological study is the lack of exposure records and information maintained by companies which if they existed would allow the estimation of past exposure to hazardous operations and agents. This study developed a job-specific questionnaire(JSQ) to estimate exposure profiles among semiconductor workers, including operation and job. Methods: This JSQ can be directly applied to workers who work or have worked in a wafer fabrication or a chip packaging and assembly facility. Results and Conclusions: We used this JSQ to obtain past exposure information from semiconductor workers via face-to-face investigation. Major contents include questions on the facilities, operations and jobs to which they have been exposed since they entered employment in the semiconductor industry. The total number of questions in the JSQ is 18. Responses to this JSQ can be used not only to estimate retrospective exposure to operations and jobs in the semiconductor industry, but also to associate with the risk of all causes of death and risk of disease, including cancer.

A Study on the SEU in the SRAM to proton Irradiation

  • Lho, Young-Hwan;Park, Bo-Kyun;Kim, Bong-Sun
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.2295-2297
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    • 2003
  • The major problem encountered in satellite design is EMI (Electro-Magnetic Interference) and EMC (Electro-Magnetic Compatibility). Here, our focus is on the effects of protons on the electronic system. The SEU (Single Event Upset) results from the level change of stored information due to photon radiation and temperature in the space and the nuclear power plant environment. The impact of SEU on PLD (Programmable Logic Devices) technology is most apparent in ROM/SRAM/DRAM devices wherein the state of storage cell can be upset. In this paper, a simple and powerful test techniques is suggested, and the results are presented for the analysis and future reference. The test results are compared with that of JPL test report. In our experiment, the proton radiation facility available at KIRAMS (Korea Institute of Radiological Medical Sciences) has been applied on a commercially available SRAM manufactured by Hynix Semiconductor Company.

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Scheduling Algorithms for Minimizing Total Weighted Flowtime in Photolithography Workstation of FAB (반도체 포토공정에서 총 가중작업흐름시간을 최소화하기 위한 스케쥴링 방법론에 관한 연구)

  • Choi, Seong-Woo
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.35 no.1
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    • pp.79-86
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    • 2012
  • This study focuses on the problem of scheduling wafer lots of several recipe(operation condition) types in the photolithography workstation in a semiconductor wafer fabrication facility, and sequence-dependent recipe set up times may be required at the photolithography machines. In addition, a lot is able to be operated at a machine when the reticle(mask) corresponding to the recipe type is set up in the photolithography machine. We suggest various heuristic algorithms, in which developed recipe selection rules and lot selection rules are used to generate reasonable schedules to minimizing the total weighted flowtime. Results of computational tests on randomly generated test problems show that the suggested algorithms outperform a scheduling method used in a real manufacturing system in terms of the total weighted flowtime of the wafer lots with ready times.

A Methodology of Radiation Measurement of MOSFET Dosimeter (MOSFET 검출기의 방사선 측정 기법)

  • Lho, Young-Hwan;Lee, Sang-Yong;Kang, Phil-Hyun
    • Proceedings of the IEEK Conference
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    • 2009.05a
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    • pp.159-162
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    • 2009
  • The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

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A Comparison of Separated and Combined Winding Concepts for Bearingless Centrifugal Pumps

  • Raggl, Klaus;Nussbaumer, Thomas;Kolar, Johann W.
    • Journal of Power Electronics
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    • v.9 no.2
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    • pp.243-258
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    • 2009
  • Bearingless centrifugal pump systems are employed in the semiconductor, pharmaceutical and medical industries due to their facility for pumping high purity fluids without particle contamination. Two types of forces have to be generated by the stator units, namely bearing forces for achieving magnetic levitation, and drive forces for producing the needed pump torque. The generation of these forces requires bearing and drive windings, which can be realized as separate bearing and drive coils or as identical, combined coils on the stator claws. In this paper, a detailed comparison between these two winding concepts is undertaken, whereby the copper losses, the power electronics losses, and the achievable pump output pressure are evaluated for both concepts. For each criterion a ratio of improvement is calculated analytically which allows evaluation of the performance of the two winding concepts for any given pump operating point and design. Finally, also practical features such as control complexity, cabling effort and manufacturability are discussed and measurements on prototype systems are carried out to validate the considerations.

Accurate Transmission Loss Allocation Algorithm Based on the Virtual Transaction Strategy: Comparison of Path-integral with Discrete Integral Methods

  • Min, Kyung-Il;Moon, Young-Hyun
    • Journal of Electrical Engineering and Technology
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    • v.5 no.4
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    • pp.511-521
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    • 2010
  • This paper presents a new algorithm to determine accurate bus-wise transmission loss allocation utilizing path-integrals dictated by the transaction strategy. For any transaction strategy, the total sum of the allocated transmission losses of all buses is equal to the actual loss given by the AC power-flow calculation considering the distributed slack. In this paper, the bus-wise allocation of the transmission loss is calculated by integrating the differential loss along a path determined by the transaction strategy. The proposed algorithm is also compared with Galiana's method, which is the well-known transmission loss allocation algorithm based on integration. The performance of the proposed algorithm is evaluated by case studies carried out on the WSCC 9-bus, IEEE 14-bus, New England 39-bus, and IEEE 118-bus systems. The simulation results show that the proposed algorithm is fast and accurate with a large step size.