• Polymer(Korea)
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• v.35 no.2
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• pp.136-140
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• 2011

The plasma resistances of nitrile curable perfluoro elastomer (NT PFE) and peroxide curable PFE (PO PFE) after exposing to $NF_3$ and $O_2$ remote plasmas were investigated by analyzing weight loss and morphology of O-ring made of PFE. The compounds were designed following the typical formulations of O-ring/seal which were applied in semiconductor and LCD production site. They were blended by an open roll mill, and then, O-ring was finally made by hot press molding and oven curing. The weight loss was calculated and morphology was observed for each atmosphere and temperature by a digital weighing machine and SEM. As results, it was confirmed the weight loss and related morphology were meaningfully different according to the cure type of PFE, filler system, and the species of remote plasma.

• The Journal of Society for e-Business Studies
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• v.24 no.3
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• pp.99-110
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• 2019

As the 4th industrial revolution progressing, manufacturers are trying to apply intelligent information technologies such as IoT(internet of things) and machine learning. In the semiconductor/LCD/tire manufacturing process, schedule plan that minimizes setup change and due date violation is very important in order to ensure efficient production. Therefore, in this paper, we suggest the deep learning based scheduling generation model minimizes setup change and due date violation in parallel machines. The proposed model learns patterns of minimizing setup change and due date violation depending on considered order using the amount of historical data. Therefore, the experiment results using three dataset depending on levels of the order list, the proposed model outperforms compared to priority rules.

• Journal of Korea Spatial Information System Society
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• v.11 no.3
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• pp.31-39
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• 2009

Requirement level regarding processing and managing real-time datastream in an ubiquitous environment is increased. Especially, due to the unbounded, high frequency and real-time characteristics of datastream, development of specialized stroge manager for DSMS is necessary to process such datastream. Existing DSMS, e.g. Coral8, can support datastream processing but it is not scalable and cannot perform well when handling large-volume real-time datastream, e.g. 100 thousand over per second. In the case of Oracle10g, which is generally used in related field, it supports storing and management processing. However, it does not support real-time datastream processing. In this paper, we propose specialized storage manager of DSMS for real-time compressed storing on semiconductor or LCD production facility of Samsung electronics, Hynix and HP. Hynix and HP. This paper describes the proposed system architecture and major components and show better performance of the proposed system compared with similar systems in the experiment section.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.199-204
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• 2012

$SF_6$ gas is widely used for dry etching process of semiconductor and display fabrication process. But $SF_6$ gas is considered for typical greenhouse gas for global warming. So it is necessary to research relating to $SF_6$ alternatives reducing greenhouse effect in semiconductor and display. $C_3F_6$ gas is one of the promising candidates for it. We studied about etch characteristics by performing Reactive Ion Etching process of dry etching and reduced gas element exhausted on etching process using absorbent Zeolite 5A. $Si_3N_4$ thin film was deposited to 500 nm with Plasma Enhanced Chemical Vapor Deposition and we performed Reactive Ion Etching process after patterning through photolithography process. It was observed that the etch rate and the etched surface of $Si_3N_4$ thin film with Scanning Electron Microscope pictures. And we measured and compared the exhausted gas before and after the absorbent using Gas Chromatograph-Mass Spectrophotometry.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.226-229
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• 2010

LED(Light Emitting Diode) is an emitting device which energy is same to the bandgap of p-type and n-type semiconductor junction. Recently high brightness LED is used in fish-luring light and traffic signal light alternative of normal light bulb, and widely used in the area of display pannel. Moreover nowadays LED has been used as a back light of LCD display. Recently, visible light communication(VLC) using LED, that allow two-way serial data communication between LEDs over a distance of sveral centimeters or meters, has been widely studied in the area of digital information transmission along with illumination and display. In this paper, we present LED communication system and their applications.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2006.05a
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• pp.90-94
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• 2006

The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to removal of impurities to tess than 1ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, we have been clearly established that a mixed system of solvent extraction, diffusion dialysis and ion-exchange technique, which made individually the most of characteristics is developed to commercialize in an efficient system for recovering the high-purity phosphoric acid. By applying vacuum evaporation, the yield of the process are almost 99% removal of nitric acid and acetic acid was achieved. And by applying the solvent extraction method with tri-octyl phosphate(TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio O/A=1/3 with four stages and the stripping of nitric acid from organic phase is attained at a ration of O/A=1 with six stages by distilled water. About 97% and 76% removal of Al and Mo were achieved by diffusion dialysis. Essentially complete less than 1ppm removal of Al, Mo by using ion exchange ion resin and purification of the phosphoric acid was obtain.

• Membrane Journal
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• v.23 no.3
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• pp.189-203
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• 2013

F-gases, gases containing fluorine such as perfluorocarbons (PFCs), sulfurhexafluoride ($SF_6$), nitrogen trifluoride ($NF_3$) are known to have green house effects. Although the net emission rates of gases containing fluorine are much lower than those of $CO_2$, their contribution to global warming cannot be ignored because of their extremely high global warming potential (GWP). F-gases mainly have been used for a variaty of applications in the semiconductor/LCD processes and in the electric power distribution industry of the national key industry. One of practical solutions of controlling the emission rates of F-gases is to reuse by separation and recovery of F-gases of low concentration from the gases mixtures with nitrogen or air. This work investigates some methods for F-gases recovery and separation around the membrane-based process.

• Applied Chemistry for Engineering
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• v.24 no.3
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• pp.266-273
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• 2013

Phthalocyanine (Pc), porphyrin, subphthalocyanine, and perylene compounds can be applicable to the fields of optical storage media, organic solar cell, LCD, PDP, semiconductor, and counterfeit money detection etc. In this study, phthalocyanine hybrid derivatives were synthesized by cross-linking perylene, subphthalocyanine, or porphyrin to the main frame of Pc. Absorbtion band of two different wavelengths appeared simultaneously in the phthalocyanine hybrid derivatives. Compared to phthalocyanine, the solubility was enhanced and the degree of Q-band shift was changed according to the kind of substitute compounds. The chemical and optical properties of samples were analyzed using FT-IR, $^1H-NMR$, and UV-Vis spectroscopic techniques.

• Journal of the Korean Society of Safety
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• v.31 no.3
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• pp.42-46
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• 2016

In LCD Display or semiconductor manufacturing processes, the anti-static technology of glass substrates and wafers becomes one of the most difficult issues which influence the yield of the semiconductor manufacturing. In order to overcome the problems of wafer surface contamination various issues such as ionization in decompressed vacuum and inactive gas(i.e. $N_2$ gas, Ar gas, etc.) environment should be considered. Soft X ray radiation is adequate in air and $O_2$ gas at atmospheric pressure while UV radiation is effective in $N_2$ gas Ar gas and at reduced pressure. At this point of view, the "vacuum ultraviolet ray ionization" is one of the most suitable methods for static elimination. The vacuum ultraviolet can be categorized according to a short wavelength whose value is from 100nm to 200nm. this is also called as an Extreme Ultraviolet. Most of these vacuum ultraviolet is absorbed in various substances including the air in the atmosphere. It is absorbed substances become to transit or expose the electrons, then the ionization is initially activated. In this study, static eliminator based on the vacuum ultraviolet ray under the above mentioned environment was tested and the results show how the ionization performance based on vacuum ultraviolet ray can be optimized. These vacuum ultraviolet ray performs better in extreme atmosphere than an ordinary atmospheric environment. Neutralization capability, therefore, shows its maximum value at $10^{-1}{\sim}10^{-3}$ Torr pressure level, and than starts degrading as pressure is gradually reduced. Neutralization capability at this peak point is higher than that at reduced pressure about $10^4$ times on the atmospheric pressure and by about $10^3$ times on the inactive gas. The introductions of these technology make it possible to perfectly overcome problems caused by static electricity and to manufacture ULSI devices and LCD with high reliability.

• Resources Recycling
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• v.15 no.5 s.73
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• pp.26-32
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• 2006

The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to remove impurities less than 1 ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, a mixed system of solvent extraction, diffusion dialysis and ion-exchange was developed to commercialize in an efficient system fur recovering the high-purity phosphoric acid. By vacuum evaporation, almost 99% of nitric and acetic acid was removed. And by solvent extraction method with tri-octyl phosphate (TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio A/O=1/3 with 4th stage of extraction stage. About 97.5% of Al and 36.7% of Mo were removed by diffusion dialysis. Essentially almost complete removal of metal ions and purification of high-purity phosphoric acid could be obtained by using ion exchange.