• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.203.2-203.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.136.2-136.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.202.2-202.2
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.152-153
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.91-92
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• 2011

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1369-1374
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• 1989

Electrical characteristics at the p-GaP semiconductor/CsNO3 electrolyte interfaces were investigated. It is found that such interfacial phenomena are well analyzed by semiconductor-semiconductor pn junction diode models and image charge effects of semiconductor-vacuum interfaces. The formation processes of electrical double layers and their potential variations are verified using cyclic voltammetric methods. The interfacial current are influenced by Cs+ ion coverage onto the semiconductor electrode surface and structure of electrical double layer.

• 한국전자현미경학회:학술대회논문집
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• 2003.11a
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• pp.52-55
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.41.1-41
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• 1998

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.17-28
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• 1995

In this paper, we developed a two-dimensional numerical simulator which could analyze the stripe geometry semiconductor laser diodes by modifying the commercial semiconductor device simulator, MEDICI. In order to study the characteristics of semiconductor laser diodes, it is necessary to solve the Helmholtz wave equation and photon rate equation in addition to the basic semiconductor equations. Also the recombination rates due to the spontaneous and the stimulated emissions should be included, which are very important recombination mechanisms in semiconductor laser diodes. Therefore, we included the solution routines which analyzed the Helmholtz wave equation and the photon rate equation and two important recombination rates to simulate the semiconductor laser diodes. Then we simulated the gain-guiding and index-guiding DH(Double Heterostructure) semiconductor laser diodes to verify the validity of the implemented functions. The results obtained from simulation are well consistent with the previously published ones. This allows us to know the operating characteristics of DH laser diodes and is expected to use as a tool for optimum design.

• Proceedings of the Korean Reliability Society Conference
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• 2001.06a
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• pp.239-244
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• 2001

Today, Ultrasonic is used as an important non-destructive test tool of semiconductor reliability evaluation and failure analysis. The semiconductor packaging trend goes to develop thin package, this trend makes difficult to inspect to defect in semiconductor package. One of the important problem in all semiconductor is moisture absorption in the atmosphere. This moisture causes crack or delamination to package when the semiconductor package is soldered on PCB. Reliability evaluation of semiconductor's object is investigating the effect of this moisture. For that reason, this study is investigating the effect of this moisture and reliability evaluation of semiconductor after preconditioning test and scanning acoustic microscope.