• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• Journal of Biomedical Engineering Research
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• v.20 no.1
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• pp.81-90
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• 1999

This paper describes an EEG(electroencephalogram) software for two-channel cerebral function monitoring system to detect the cerebral ischemia. In the software, two-channel bipolar analog EEG signals are digitized and from the signals various EEG parameters are extracted and displayed on a monitor in real-time. Digitized EEG signal is transformed by FFT(Fast Fourier transform) and represented as CSA(compressed spectral array) and DSA(density spectral array). Additional 5 parameters, such as alpha ratio, percent delta, spectral edge frequency, total power, and difference in total power, are estimated using the FFT spectra. All of these are effectively merged in a monitor and displayed in real-time. Through animal experiments and clinical trials on men, the software is modified and enhanced. Since the software provides raw EEG, CSA, DSA, simultaneously with additional 5 parameters in a monitor, it is possible to observe patients multilaterally. For easy comparison of patient's status, reference patterns of CSA, DSA can be captured and displayed on top of the monitor. And user can mark events of surgical operation and patient's conditions on the software, this allow him jump to the points of events directly, when reviewing the recorded EEG file afterwards. Other functions, such as forward/backward jump, gain control, file management are equipped and these are operated by simple mouse click. Clinical tests in a university hospital show that the software responds accurately according to the conditions of patients and medical doctors can use the software easily.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.1-7
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• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.7-15
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• 2012

Semiconductor packages are increasingly moving toward miniaturization, lighter and multi-functions for mobile application, which requires highly integrated multi-stack package. To meet the industrial demand, the package and silicon chip become thinner, and ultra-thin packages will show serious reliability problems such as warpage, crack and other failures. These problems are mainly caused by the mismatch of various package materials and geometric dimensions. In this study we perform the numerical analysis of the warpage deformation and thermal stress of 4-layer stacked FBGA package after EMC molding and reflow process, respectively. After EMC molding and reflow process, the package exhibits the different warpage characteristics due to the temperature-dependent material properties. Key material properties which affect the warpage of package are investigated such as the elastic moduli and CTEs of EMC and PCB. It is found that CTE of EMC material is the dominant factor which controls the warpage. The results of RSM optimization of the material properties demonstrate that warpage can be reduced by $28{\mu}m$. As the silicon die becomes thinner, the maximum stress of each die is increased. In particular, the stress of the top die is substantially increased at the outer edge of the die. This stress concentration will lead to the failure of the package. Therefore, proper selection of package material and structural design are essential for the ultra-thin die packages.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.49-53
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• 2017

We study on the change of electrical properties of two-dimensional (2D) $SnSe_2$ materials with respect to Cl doping as $SnSe_{1.994}Cl_{0.006}$ under a high temperature condition. (300~450 K) By the simple solid-state reaction method, non-and Cl-doped 2D $SnSe_2$ materials are successfully synthesized with negligible impurities as confirmed by X-ray diffraction. From the temperature dependence of resistivity, it is observed that the conduction mechanism is changed from hopping to degenerate conduction with Cl doping. By Hall effect measurement, an increase on electron carrier concentration from ${\sim}7{\times}10^{16}$ to ${\sim}3{\times}10^{18}cm^{-3}$ with Cl doping verifies that Cl is an effective electron donor which results in the encouraged carrier concentration. Detailed analysis for temperature dependent Hall mobility reveals that the electrical transports in high temperature regime are governed by the grain boundary-controlled mechanism for non-doped $SnSe_2$, which is effectively suppressed by Cl-doping as entering metallic transport regime.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.906-911
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• 2004

In this paper, a VCDRO(Voltage Control Dielectric Resonator Oscillator) applied to FMCW(Frequency Modulated Continuous Wave)Radar as stable source is implemented and constructed with a MESFET(Metal-semiconductor Field-Effect Transistor) for low noise, a dielectric resonate. of high frequency selectivity, and high Q varator diode to obtain a good phase noise performance and stable sweep characteristics. The designed circuits is simulated thrash harmonic balance simulation technique to provide the optimum performance. The measured result of a fabricated VCDRO shows that output is 2.22㏈m at 12.05GHz, harmonic suppression -30㏈c, phase noise -130㏈c at 100KHz offset, and sweep range of varator diode $\pm$18.7MHz, respectively. This oscillator will be available to FMCW Radar.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.6
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• pp.560-568
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• 2005

The proposed Multi-level PDP sustain Driver is composed of the semiconductor devices with low voltage rating compared to those used in the prior circuit proposed by L. Wether, and it has two resonant periods during the charging (rising period) and discharging (falling period) the PDP in the sustaining voltage waveforms. In accordance with the change of timing phase$(T_{r1},\;T_{i1},\;T_{r2})$, the performance characteristics of a commercial PDP module has been carried out and compared the characteristic with the 42V6, made of LG Electronics co., Experimental results show that the performance characteristics of PDP module are greatly influenced by the variation of $T_{i1}\;and\;T_{r2}$. The variation of $T_{r1}$ do not influence much on the performances of PDP. With the conditions that $T_{r1}=60ns,\;T_{i1}=120ns,\;and\;T_{r2}=350ns$, we could get the performances listed as the luminance is increased $14.6\%$, the power consumptions is decreased $5.9\%$, the panel efficiency is increased $24.2\%$, module efficiency is increased $21.2\%$, compared to those shown in the commercial PDP module (42V6). Therefore, the proposed multi-level PDP sustain driver expected to be suitable to actual PDP module application.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.2
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• pp.979-984
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• 2011

Although sludge production has been increased due to the number of the wastewater treatment plants expanded, needs of the techniques for the sludge reduction and disposal has been issued importantly because the sludge dumping to ocean is prohibited from 2012 by the London Dumping Convention. Therefore, the sludge solubilization using electrolysis as an alternative techniques for the sludge disposal was carried out in this study. Iridium coated titanium based insoluble electrodes were used and 20 volt was applied to the electrolysis reactor using DC power supply. Supernatants of the treated sludge was monitored: The soluble COD, TN, TP of it was increased to 151%, 22% and 6% respectively. And the sludge floc size distribution was changed, that is, the flocs ranged from 0.1 to 1.0 ${\mu}m$ were increased. All of these results indicate that the cells were lysed and the internal matters bursted out of the cell after electrolysis. As well as the reduction of the sludge production, the soluble organic matters from the cells could be used as an external carbon sources in the advanced wastewater treatment plants.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.214-218
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• 2020

In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.