• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.164-164
• /
• 2013

Among multicomponent nanostructures, hybrid nanocatalysts consisting of metal nanoparticle-semiconductor junctions offer an interesting platform to study the role of metal-oxide interfaces and hot electron flows in heterogeneous catalysis. In this study, we report that hot carriers generated upon photon absorption significantly impact the catalytic activity of CO oxidation. We found that Pt-CdSe-Pt nanodumbbells exhibited a higher turnover frequency by a factor of two during irradiation by light with energy higher than the bandgap of CdSe, while the turnover rate on bare Pt nanoparticles didn't depend on light irradiation. We also found that Pt nanoparticles deposited on a GaN substrate under light irradiation exhibit changes in catalytic activity of CO oxidation that depends on the type of doping of the GaN. We suppose that hot electrons are generated upon the absorption of photons by the semiconducting nanorods or substrates, whereafter the hot electrons are injected into the Pt nanoparticles, resulting in the change in catalytic activity. We discuss the possible mechanism for how hot carrier flows generated during light irradiation affect the catalytic activity of CO oxidation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.282.1-282.1
• /
• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.1
• /
• pp.99-106
• /
• 2013

Polyaniline-yttrium trioxide (PAni-$Y_2O_3$) composites were synthesized by the in-situ polymerization of aniline in the presence of $Y_2O_3$ The composite formation and structural changes in these composites were investigated by X-ray diffraction (XRD), Fourier transform infra red spectroscopy (FTIR), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The direct current (DC) electrical conductivity of the order of $0.51{\times}10^{-2}\;S\;cm^{-1}-0.283\;S\;cm^{-1}$ in the temperature range 300 K-473 K indicates semiconducting behavior of the composites. Room temperature AC conductivity and dielectric response of the composites were studied in the frequency range of 10 Hz to 1 MHz. The variation of AC conductivity with frequency obeyed the power law, which decreased with increasing weight percentage (wt %) of $Y_2O_3$. Studies on dielectric properties shows the relaxation contribution coupled by electrode polarization effect. The dielectric constant and dielectric loss in these composites depend on the content of $Y_2O_3$ with a percolation threshold at 20 wt % of $Y_2O_3$ in PAni. Electromagnetic interference shielding effectiveness (EMI SE) of the composites in the frequency range 100 Hz to 2 GHz was in the practically useful range of -12.2 dB to -17.2 dB. The observed electrical and shielding properties were attributed to the interaction of $Y_2O_3$ particles with the PAni molecular chains.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.142.2-142.2
• /
• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.55-61
• /
• 2002

Ultra-fine particles of $SnO_{2}$ was synthersized by the sol-gel powder processing using tin(II) chloride dihydrate$(SnCl_{2}{\cdot}2H_{2}O)$ and ethanol$(C_{2}H_{5}OH)$ as raw materials. Gel powders can be obtained by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_{2}$ phase was increased with temperature because of the evaporation of volatile components, and the creation of $SnO_{2}$ phase was almost done by the heat treatment at $700^{\circ}C/30min$ The grain sizes after firing are about 20-30nm, and it showed the narrow distribution of grain size. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_{2}$ was increased with temperature up to $380^{\circ}C$ by the typical conduction mechanism of semiconducting ceramics. There was a region of constant conductance between about $200^{\circ}C$ and $380^{\circ}C$ due to the increment of electron concentration with temperature and the annihilation of conduction carriers by the absorption and electron trapped-ionization of oxygen on the surface of $SnO_{2}$, It was finally showed the intrinsic behaviors above $450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

• Korean Journal of Materials Research
• /
• v.23 no.8
• /
• pp.430-434
• /
• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.12
• /
• pp.89-100
• /
• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• Journal of the Korean Magnetics Society
• /
• v.15 no.3
• /
• pp.181-185
• /
• 2005

We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor $Zn_{1-x}Cr_xO$ thin films prepared by reactive sputtering. Nondoped $Zn_{0.99}Cr_{0.01}O$ thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.

• Journal of Sensor Science and Technology
• /
• v.23 no.1
• /
• pp.15-18
• /
• 2014

We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.490.1-490.1
• /
• 2014

The ZnO nanowire (NW)-based nanogenerators (NGs) can have rectifying current and potential generated by the coupled piezoelectric and semiconducting properties of ZnO by variety of external stimulation such as pushing, bending and stretching. So, ZnO NGs needed to enhance durability for stable properties of NGs. The durability of the metal electrodes used in the typical ZnO nanogenerators(NGs) is unstable for both electrical and mechanical stability. Indium tin oxide (ITO) is used as transparent flexible electrode but because of high cost and limited supply of indium, the fragility and lack of flexibility of ITO layers, alternatives are being sought. It is expected that carbon nanotube and Ag nanowire conductive coatings could be a prospective replacement. In this work, we demonstrated transparent flexible ZnO NGs by using CNT/Ag nanowire hybrid electrode, in which electrical and mechanical stability of top electrode has been improved. We grew vertical type ZnO NW by hydrothermal method and ZnO NW was coated with hybrid silicone coating solution as capping layer to enhance adhesion and durability of ZNW. We coated the CNT/Ag nanowire hybrid electrode by using bar coating system on a capping layer. Power generation of the ZnO NG is measured by using a picoammeter, a oscilloscope and confirmed surface condition with FE-SEM. As a results, the NGs using the CNT/Ag NW hybrid electrode show 75% transparency at wavelength 550 nm and small change of the resistance of the electrode after bending test. It will be discussed the effect of the improved flexibility of top electrode on power generation enhancement of ZnO NGs.