• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.215-216
• /
• 2007

Semiconducting layers are thin rubber film between electrical cable wire and insulating polymer layers having a volume resistivity of ${\sim}10^2{\Omega}cm$. A new semiconducting material was suggested in this study based on the carbon nanotube(CNT)-reinforced polymer nanocomposites. CNT-reinforced polymer nanocomposites were prepared by solution mixing with various polymer type and dual filler system. The mechanical, thermal and electrical properties were investigated as a function of polymer type and dual filler system based on CNT and carbon black. The volume resistivity of composites was strongly related with the crystallinity of polymer matrix. With decreased crystallinity, the volume resistivity decreased linearly until a critical point, and it remained constant with further decreasing the crystallinity. Dual filler system also affected the volume resistivity. The CNT-reinforced nanocomposite showed the lowest volume resistivity. When a small amount of carbon black(CB) was replaced the CNT, the crystallinity increased considerably leading to a higher volume resistivity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.37-37
• /
• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Journal of the Korea Convergence Society
• /
• v.12 no.1
• /
• pp.193-198
• /
• 2021

In this study, a nano-convergence material technology that can satisfy the superior impact resistance and electrical properties of the semiconducting flame retardant compound used in the Oversheath layer of Extra-high voltage cables was studied. When some of the carbon black used in the semiconducting flame-retardant compound was replaced with CNT (carbon nano tube), the change in physical properties was analyzed. Through the application of carbon nanotubes with remarkably excellent electrical properties, even a small amount of conductive filler formulations can provide superior electrical properties. In addition, as the total filler amount is reduced based on the compound, the workability is improved, and in particular, flexibility and impact resistance are improved, which is expected to contribute to the improvement of the durability of the cable.

• Journal of the Korean Society of Radiology
• /
• v.17 no.4
• /
• pp.625-631
• /
• 2023

The important requirement of industrial dynamic X-ray detector operating under high tube voltage up to 450 kVp for 24 hours and 7 days is to obtain significantly high radiation resistance. This study presents the radiation resistance characteristics of various thin film transistors (TFTs) with a-Si, poly-Si and IGZO semiconducting layers. IGZO TFT offering dozens of times higher field effect mobility than a-Si TFT was processed with highly hydrogenated plasma in between IGZO semiconducting layer and inter-layered dielectric. The hydrogenated IGZO TFT showed most sustainable radiation resistance up to 10,000Gy accumulated, thus, concluded that it is a sole switching device in X-ray imaging sensor offering dynamic X-ray imaging at high frame rate under extremely severe radiation environment such as automated X-ray inspection.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1028-1030
• /
• 1995

In the fields of the optics, precise machine, semiconducting processing, the micro-positioning actuators are required for the control of position in the submicron range. In this study, $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb({Zn}_{1/3}Nb_{2/3})O_3-Pb({Zr}_{1/2}Ti_{1/2})O_3$ ceramics were fabricated by solid state reaction. The structural, dielectric and electric properties were investigated for sintering condition. The specimen sintered at $1,150(^\circ}C)$ for 1hr, had the highest density and dielectric contant. The resistivity, dielectric and density were increased with increasing PZN contents.

• Carbon letters
• /
• v.17 no.1
• /
• pp.29-32
• /
• 2016

This paper addresses the effect of dopants on the electronic properties of zigzag (8, 0) semiconducting single walled carbon nanotubes (SWCNTs), using extended Hückel theory combined with nonequilibrium Green’s function formalism. Through appropriate dopant concentrations, the electronic properties of SWCNTs can be modified. Within this context, we present our ongoing investigation on (8, 0) SWCNTs doped with nitrogen. Quantum confinement effects on the electronic properties of the SWCNTs have also been investigated. The obtained results reveal that the electronic properties of SWCNTs are strongly dependent on the dopant concentration and modification of electronic structures by hydrogen confinement.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.351.1-351.1
• /
• 2016

While conventional electronic devices have been fabricated on the rigid and brittle Si based wafer as a semiconducting substrate, future devices are increasingly finding applications where flexibility and stretchability are further integrated to enable emerging and wearable devices. To achieve high flexibility and stretchability, various approaches are investigated such as polymer based conducting composite, thin metal films on the polymer substrate, and structural modifications for stretchable electronics. In spite of many efforts, it is still a challenge to identify a solution that offers both high stretchability and superior electrical properties. In this paper, we introduce a highly stretchable entangled-mesh graphene showing a potential to address such requirements as stretchability and good electrical performance. Entangle-mesh graphene was synthesized by CVD graphene on the Cu foil. To analyze the mechanical properties of entangled-mesh graphene, endurance and stretching tester have been used.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.7
• /
• pp.415-418
• /
• 2015

In this paper, $TiO_2$ based thin-film transistors (TFTs) were fabricated using by an atomic layer deposition with high aspect ratio and excellent step coverage. $TiO_2$ semiconducting layer was deposited showing a rutile phase through the rapid thermal annealing process, and exhibited TFT characteristics with a $200{\mu}m$ channel length of low-leakage currents (none of current flow during off-state), stable threshold voltages (-10 V ~ 0 V), and a much higher on/off current ratio (<$10^5$), respectively.

• Journal of the Korean Ceramic Society
• /
• v.39 no.1
• /
• pp.16-20
• /
• 2002

Semiconducting (Ba.Sr)TiO$_3$ceramic device, which shows the PTCR effect, has been usually used as a current limiter. In this case, the device should endure the condition under the high electric field. In this study, the dynamic electrical properties of the PTCR device under high voltage has been evaluated. Two different formulated powders were used and the sintered bodies exhibited the different grain size and porosity. The wide range of characterization such as complex impedance spectroscopy, microstructure, I-V characteristics and voltage dependence of resistivity of the samples were performed. The PTCR effect of the specimen containing coarse grains was very sensitively dependent on the AC electric field, showing that it was inversely pro-portional to the grain boundary potential barrier. The withstanding voltage was proportional to the potential barrier of grain boundary.

• Journal of the Korean Ceramic Society
• /
• v.39 no.1
• /
• pp.21-25
• /
• 2002

Effect of abnormal grain growth and heat treatment time on the electrical properties of donor-doped semiconductive BaTiO$_3$ceramics was examined. La-doped BaTiO$_3$ceramics was sintered at 134$0^{\circ}C$ for different times from 10 to 600 min in order to change the volume fraction of the abnormal grains in samples. As a result, samples with different volume fraction of abnormal grain growth from 22 to 100% were prepared. The samples were annealed at 120$0^{\circ}C$ for various times. The resistivity of the sam-ples at room and above Curie temperature was examined. The complex impedance measurement as functions of the volume fraction of abnormal grains and annealing time was conducted. Separation of complex impedance semicircle was observed in a sample in which abnormal and fine grains coexist. The results are discussed from a viewpoint of microstructure-property relationship.